標(biāo)題: Titlebook: Metal Impurities in Silicon- and Germanium-Based Technologies; Origin, Characteriza Cor Claeys,Eddy Simoen Book 2018 Springer International [打印本頁] 作者: Halcyon 時(shí)間: 2025-3-21 17:54
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書目名稱Metal Impurities in Silicon- and Germanium-Based Technologies讀者反饋學(xué)科排名
作者: seduce 時(shí)間: 2025-3-21 21:33 作者: menopause 時(shí)間: 2025-3-22 00:50
Cor Claeys,Eddy Simoenalth consequences of using antibiotics in food animals. In 2001, the United States FDA’s Center for Veterinary Medicine (CVM) (FDA-CVM, 2001) published a risk assessment model for potential adverse human health consequences of using a certain class of antibiotics, fluoroquinolones, to treat flocks o作者: 搖晃 時(shí)間: 2025-3-22 05:05
Cor Claeys,Eddy Simoenconsequences of using antibiotics in food animals. The ‘probThis book grew out of an effort to salvage a potentially useful idea for greatly simplifying traditional quantitative risk assessments of the human health consequences of using antibiotics in food animals. In 2001, the United States FDA’s C作者: blithe 時(shí)間: 2025-3-22 12:05 作者: nocturnal 時(shí)間: 2025-3-22 16:44
Cor Claeys,Eddy Simoenconsequences of using antibiotics in food animals. The ‘probThis book grew out of an effort to salvage a potentially useful idea for greatly simplifying traditional quantitative risk assessments of the human health consequences of using antibiotics in food animals. In 2001, the United States FDA’s C作者: deciduous 時(shí)間: 2025-3-22 18:26
Cor Claeys,Eddy Simoenalth consequences of using antibiotics in food animals. In 2001, the United States FDA’s Center for Veterinary Medicine (CVM) (FDA-CVM, 2001) published a risk assessment model for potential adverse human health consequences of using a certain class of antibiotics, fluoroquinolones, to treat flocks o作者: FOVEA 時(shí)間: 2025-3-22 23:15
Cor Claeys,Eddy Simoenconsequences of using antibiotics in food animals. The ‘probThis book grew out of an effort to salvage a potentially useful idea for greatly simplifying traditional quantitative risk assessments of the human health consequences of using antibiotics in food animals. In 2001, the United States FDA’s C作者: Aura231 時(shí)間: 2025-3-23 04:41 作者: 尋找 時(shí)間: 2025-3-23 06:16
Basic Properties of Transition Metals in Semiconductors,ses some common properties of metals in semiconductors and is aimed to provide a general physical background.?Attention is given to parameters like maximum solid solubility, diffusivity, segregation and precipitation. As will be outlined, there exists an interaction between these parameters which is作者: 裂隙 時(shí)間: 2025-3-23 11:47
Source of Metals in Si and Ge Crystal Growth and Processing,taminants from the wafer surface, can actually deposit metals, depending on a number of parameters. Optimal cleaning recipes for both Si and Ge wafers are discussed. Alternatively, one can consider dry vapor phase cleaning. Photoresist deposition and stripping is another source of metal contaminatio作者: SUE 時(shí)間: 2025-3-23 14:18 作者: grenade 時(shí)間: 2025-3-23 21:52 作者: collagenase 時(shí)間: 2025-3-24 02:13
Electrical Properties of Metals in Si and Ge, some of the process steps (e.g. as silicides, metal layers, diffusion barrier, hard masks, gate dielectric etc.). The risk that they act as a contaminant degrading the device properties has to be minimized but can in some cases not be avoided. Sections .–. discuss the behavior and properties of nic作者: ANTE 時(shí)間: 2025-3-24 03:38
Impact of Metals on Silicon Devices and Circuits,resence of metal centers in a MOS capacitor will be described. Both dissolved atoms and precipitates can cause deleterious effects on the MOS characteristics, giving rise to excess gate leakage, hysteresis and instability and in the worst case, early breakdown (failure). A second part will have a lo作者: receptors 時(shí)間: 2025-3-24 07:10
Gettering and Passivation of Metals in Silicon and Germanium, type of synopsis and to focus on the understanding and the new insights that have been obtained since the beginning of the century. First some general aspects about gettering strategies are discussed, giving a schematic overview of different gettering approaches, before outlining the main gettering作者: tic-douloureux 時(shí)間: 2025-3-24 11:02 作者: debase 時(shí)間: 2025-3-24 16:59
l risk assessment. The basic idea was to assume that human health risks were directly proportional to some suitably defined exposure metric. In symbols: Risk = K × Exposure, where “Exposure” would be defined in978-1-4419-3850-3978-0-387-26118-8Series ISSN 0884-8289 Series E-ISSN 2214-7934 作者: legitimate 時(shí)間: 2025-3-24 23:05
Cor Claeys,Eddy Simoenl risk assessment. The basic idea was to assume that human health risks were directly proportional to some suitably defined exposure metric. In symbols: Risk = K × Exposure, where “Exposure” would be defined in978-1-4419-3850-3978-0-387-26118-8Series ISSN 0884-8289 Series E-ISSN 2214-7934 作者: 臭名昭著 時(shí)間: 2025-3-25 02:11 作者: 挫敗 時(shí)間: 2025-3-25 05:24 作者: floaters 時(shí)間: 2025-3-25 09:31
Cor Claeys,Eddy Simoen, CVM proposed a dramatically simple approach that skipped many of the steps in traditional risk assessment. The basic idea was to assume that human health risks were directly proportional to some suitably defined exposure metric. In symbols: Risk = K × Exposure, where “Exposure” would be defined in作者: 教唆 時(shí)間: 2025-3-25 13:26 作者: DAFT 時(shí)間: 2025-3-25 18:41 作者: 不能仁慈 時(shí)間: 2025-3-25 20:45 作者: 同步左右 時(shí)間: 2025-3-26 00:16 作者: SNEER 時(shí)間: 2025-3-26 05:43
0933-033X lectronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering..978-3-030-06747-2978-3-319-93925-4Series ISSN 0933-033X Series E-ISSN 2196-2812 作者: flex336 時(shí)間: 2025-3-26 12:01 作者: 情感 時(shí)間: 2025-3-26 15:01 作者: 同來核對(duì) 時(shí)間: 2025-3-26 17:01
Electrical Activity of Iron and Copper in Si, SiGe and Ge, deep levels, associated with Fe (Cu) will be described in detail, both in Si and (Si)Ge. An overview of the deep-level parameters of the different point and extended defects will be given. Also the activation of pre-existing extended defects will be discussed. Finally, dedicated, mainly lifetime-ba作者: pus840 時(shí)間: 2025-3-26 21:09 作者: 謙卑 時(shí)間: 2025-3-27 02:42 作者: indenture 時(shí)間: 2025-3-27 05:48
Modeling of Metal Properties in Si, Si,Ge, and Ge,are important from a viewpoint of gettering and passivation of metal contaminants. In a final section, the formation of metal pairs and small clusters will be investigated. In addition, the interactions of metal atoms with radiation and extended defects are discussed. An approach for the understandi作者: 不法行為 時(shí)間: 2025-3-27 10:35 作者: Adenoma 時(shí)間: 2025-3-27 14:30
Metal Impurities in Silicon- and Germanium-Based Technologies978-3-319-93925-4Series ISSN 0933-033X Series E-ISSN 2196-2812 作者: 清楚說話 時(shí)間: 2025-3-27 20:09 作者: 根除 時(shí)間: 2025-3-28 01:44 作者: Accommodation 時(shí)間: 2025-3-28 04:16
https://doi.org/10.1007/978-3-319-93925-4Metal Gettering; Metal Precipitation and Segregation; Defects and Device Performance; Defect Engineerin作者: Cosmopolitan 時(shí)間: 2025-3-28 06:49
Book 2018for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering..作者: phlegm 時(shí)間: 2025-3-28 11:00
Book 2018etals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed..?.The book offers a valuable reference guide 作者: 把…比做 時(shí)間: 2025-3-28 14:54 作者: Electrolysis 時(shí)間: 2025-3-28 20:57
Source of Metals in Si and Ge Crystal Growth and Processing,s step, requiring regular metal contamination monitoring. While the lowering of the thermal budget has reduced the occurrence of contamination, fast diffusing metals can still penetrate the semiconductor material. Finally, the use of metal layers and its impact on metal contamination is highlighted in the last section of this chapter.作者: Gleason-score 時(shí)間: 2025-3-28 23:27
Impact of Metals on Silicon Devices and Circuits,be obtained. In forward operation, excess recombination mediated by metal-related deep levels gives rise to an ideality factor between 1 and 2. A third part considers the impact on transistors and circuits, including CCDs and CMOS Imager Sensors (CIS).作者: 思想流動(dòng) 時(shí)間: 2025-3-29 04:25 作者: 工作 時(shí)間: 2025-3-29 09:40 作者: stress-response 時(shí)間: 2025-3-29 13:55
