作者: interlude 時(shí)間: 2025-3-22 00:13 作者: Encoding 時(shí)間: 2025-3-22 03:20 作者: 卜聞 時(shí)間: 2025-3-22 05:07 作者: kyphoplasty 時(shí)間: 2025-3-22 09:11
Overview: 978-3-7091-5708-4978-3-7091-5706-0作者: Rinne-Test 時(shí)間: 2025-3-22 16:34
http://image.papertrans.cn/k/image/545971.jpg作者: 鞠躬 時(shí)間: 2025-3-22 20:13 作者: IRK 時(shí)間: 2025-3-22 21:37 作者: jovial 時(shí)間: 2025-3-23 04:07 作者: 踉蹌 時(shí)間: 2025-3-23 08:24 作者: 可以任性 時(shí)間: 2025-3-23 09:59
Franz Rittertion equipments such as measuring sets, signal generators, pilot and . dialing receivers, companders, as well as to complementary amplifiers, pulse amplifiers, multivibrators and small-size transmitters. The transistor is thus seen to be making headway not only in the proper communications sector, b作者: 膽小懦夫 時(shí)間: 2025-3-23 14:22 作者: Hemiparesis 時(shí)間: 2025-3-23 21:36
t—as mainly observed by .—also at the boundary between two semiconductors. These zones, the conductivity of which differs from the interior of the semiconductor, are generally situated on both sides of the boundary. Therefore, this layer is called “Doppelrandschicht” (double-barrier layer) in contra作者: 字形刻痕 時(shí)間: 2025-3-23 23:02
Franz Ritterhe phase boundaries..At the phase boundary between a semiconductor and a gas, the gas particles are bounded and an electronic equilibrium between adsorbed particles and the solid is produced (chemisorption). The production of a space charge barrier layer at the surface of the solid, which is a conse作者: lymphedema 時(shí)間: 2025-3-24 04:56 作者: IRS 時(shí)間: 2025-3-24 09:17
Franz Ritteretween 1 and 10 mc/s, and in particular the alloyed transistor, today everywhere holds the field; higher frequencies up to 500 mc/s are attained with variants of the junction transistor such as the surface-barrier, the tetrode, the pnip, and the diffused transistor. The performance of the transistor作者: unstable-angina 時(shí)間: 2025-3-24 14:16 作者: 使成波狀 時(shí)間: 2025-3-24 15:19
etween 1 and 10 mc/s, and in particular the alloyed transistor, today everywhere holds the field; higher frequencies up to 500 mc/s are attained with variants of the junction transistor such as the surface-barrier, the tetrode, the pnip, and the diffused transistor. The performance of the transistor作者: d-limonene 時(shí)間: 2025-3-24 21:59
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7樓作者: 大方不好 時(shí)間: 2025-3-25 18:01
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10樓
