標(biāo)題: Titlebook: Ion Implantation in Semiconductors; Science and Technolo Susumu Namba Book 1975 Springer Science+Business Media New York 1975 ESR.Plantatio [打印本頁(yè)] 作者: 引起極大興趣 時(shí)間: 2025-3-21 16:34
書(shū)目名稱Ion Implantation in Semiconductors影響因子(影響力)
書(shū)目名稱Ion Implantation in Semiconductors影響因子(影響力)學(xué)科排名
書(shū)目名稱Ion Implantation in Semiconductors網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Ion Implantation in Semiconductors網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Ion Implantation in Semiconductors被引頻次
書(shū)目名稱Ion Implantation in Semiconductors被引頻次學(xué)科排名
書(shū)目名稱Ion Implantation in Semiconductors年度引用
書(shū)目名稱Ion Implantation in Semiconductors年度引用學(xué)科排名
書(shū)目名稱Ion Implantation in Semiconductors讀者反饋
書(shū)目名稱Ion Implantation in Semiconductors讀者反饋學(xué)科排名
作者: mortuary 時(shí)間: 2025-3-21 20:45
Book 1975antation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Pa作者: rods366 時(shí)間: 2025-3-22 04:25 作者: 結(jié)構(gòu) 時(shí)間: 2025-3-22 04:34
Large Increase of Emission Efficiency in Indirect GaAsP by N-Ion Implantationne. In the measurement at 77K integrated intensity of lightly implanted samples exceeds 1000 times as large as that of unimplanted one. Emission intensity becomes nearly the same order as that of direct GaAsP. This is attributed to the emission due to the NN line.作者: Anthrp 時(shí)間: 2025-3-22 12:26
Behaviors of Ga and P Damages Introduced by Ion-Implantation into GaPses. Moreover, .C implanted GaP showed p-type conductivity and carrier concentration also tended to become higher with decrease of doses. And these results supported our expectation that electrical properties of amphoteric impurities in GaP could be controlled, using damage difference between Ga and P caused by ion-implantation.作者: 枯萎將要 時(shí)間: 2025-3-22 15:20
Photoluminescence of Zinc Implanted n-Type GaAseatment. Compensation of thermally induced Ga-vacancies by implanted Zn atoms plays a dominant role in the recovery process. In-depth variation of photoluminescence spectrum was also studied by succesively etching the implanted surface. This technique was found very useful for profiling implanted atoms and vacancies.作者: epidermis 時(shí)間: 2025-3-22 19:00
Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38iously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and effective surface carrier concentration was found. Qualitative explanation of annealing behaviors is presented.作者: extinct 時(shí)間: 2025-3-22 22:00 作者: Monolithic 時(shí)間: 2025-3-23 02:26
The Effects of Ion Dose and Implantation Temperature on Enhanced Diffusion in Selenium Ion-Implantedtroduced by implantation; one is dominant at low doses and responsible for a broad band emission centered at 1.31 eV, and the another is Ga vacancy-Se donor complex, which is increased with dose and affects the enhanced diffusion. It is suggested that the broad band at 1.31 eV is attributed to As vacancy.作者: Observe 時(shí)間: 2025-3-23 06:23
ESR Studies of Annealing Behavior of Nitrogen-Implanted GaP700 or 750 °C anneal, the hyperfine spectrum of the implanted N. (with illumination at 5180 or 7050 A at 4.2 K) which is evidenced 3 lines centered about a g-value of 2.017, and the spectrum due to the secondary defects of which g-value is 2.0030 ± 0.0004 and ΔHms1~6 gauss have been detected.作者: 乞討 時(shí)間: 2025-3-23 12:32
Encapsulation of Ion Implanted GaAsElectrical activity from donor ions implanted into GaAs has only been achieved after a post implantation anneal cycle to temperatures in excess of 650°C. SiO. coatings have proved unsatisfactory whilst Si.N. layers are good up to at least 750°C. From preliminary measurements Ga.O. films also show promising characteristics.作者: 音的強(qiáng)弱 時(shí)間: 2025-3-23 17:28
Ion Implantations of Mg and Zn into n-Type GaPMeasurements of Hall-effect and sheet-resistivity and of depth of pn junction were carried out to make an electrical evaluation of p-type layer formed in GaP by either Mg or Zn ion implantation. Photoluminescence spectra were also measured for the implanted GaP both at room temperature and at 100 °K.作者: PURG 時(shí)間: 2025-3-23 21:42 作者: dominant 時(shí)間: 2025-3-24 01:57
Anodic Oxidation and Profile Determination of Ion Implanted Semi-Insulating GaAs Te and Si implanted profiles in semi-insulating GaAs. The samples were implanted at 350°C and encapsulated in Si.N. for anneal at temperatures up to 900°C Differential Hall measurements indicated strong deviations from predicted Gaussian profiles and maximum carrier concentrations below 10. cm..作者: 遭遇 時(shí)間: 2025-3-24 04:36
Implantation of Silicon Into Gallium Arsenidegh electron concentration. The dependence of sheet resistivity, surface carrier concentration and mobility on dose, implantation temperature and annealing temperature was determined. Peak doping levels are about 3x10... for 340°C implantation with 10.cm. dose. Diffusion of implanted silicon was also confirmed.作者: Receive 時(shí)間: 2025-3-24 09:35
The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0., and P prior to annealing. In particular, the diffusion rate of the implanted Zn during the anneal can be strongly inhibited by the co-implantation of As or P, whereas Ga implantation has only a minor effect.作者: 鞭打 時(shí)間: 2025-3-24 13:57
Compensating Layers in GaAs by Ion Implantation: Application to Integrated Opticsa few examples of optical waveguides in near IR region realized by H. implantation and we discuss the using 0. implanted layers to realize light guides as the compensation at high anneal temperatures is stable.作者: 吹牛需要藝術(shù) 時(shí)間: 2025-3-24 17:14
Electrical Properties of Proton Bombarded N-Type GaAsckness of the semi-insulating layer produced by the bombardments is nearly equal to the projected proton range. Prom Hall-effect measurements, it is found that the donor level of 0.15 eV is created by proton bombardments.作者: 玉米 時(shí)間: 2025-3-24 22:07 作者: 附錄 時(shí)間: 2025-3-25 00:20
http://image.papertrans.cn/i/image/475173.jpg作者: 魯莽 時(shí)間: 2025-3-25 05:24
978-1-4684-2153-8Springer Science+Business Media New York 1975作者: 打算 時(shí)間: 2025-3-25 10:15 作者: 遺棄 時(shí)間: 2025-3-25 15:35 作者: Flat-Feet 時(shí)間: 2025-3-25 19:49 作者: 類似思想 時(shí)間: 2025-3-25 21:00 作者: RODE 時(shí)間: 2025-3-26 00:55
P. N. Favennec,E. V. K. Raoernt so günstig wie etwa bei Wahrnehmungsexperimenten, die immer noch so etwas wie ein Musterfall für das psychologische Experiment sind.. Damit bleibt die Forschung hinsichtlich der Gestaltungsvorg?nge angewiesen auf die ., als Gelegenheitsbeobachtung bei Erwachsenen, als Dauerbeobachtung bei Kinde作者: facetious 時(shí)間: 2025-3-26 06:12 作者: 生銹 時(shí)間: 2025-3-26 09:23
T. Shimada,Y. Shiraki,K. F. Komatsubarae und unter st?ndiger Bedrohung lebende Gefangene, die um das N?tigste für die Kinder und ihr eigenes überleben k?mpften. Für die Kinder, die überlebten, gab es weder die Sicherheit, dass die Betreuerinnen bei ihnen bleiben würden, noch dass sie sie im Konzentrationslager vor Bedrohungen schützen ko作者: 反叛者 時(shí)間: 2025-3-26 16:37
T. Inada,Y. Ohnukiegt? Um das herauszufinden, pr?sentiert die Forscherin nun einen anderen Ton, und die Versuchsperson beginnt erneut, sich heftig zu bewegen. Offenbar kann die Versuchsperson neben dem ersten Ton auch erkennen, dass der neue Ton anders beschaffen ist, was als Beleg dafür gelten kann, dass hier ein ei作者: CUMB 時(shí)間: 2025-3-26 19:07
J. C. C. Tsai,J. M. MorabitoBenjamin sieht Gegenst?nde auch verschwinden, wenn sie durch den Schaum ins Spülwasser getaucht werden, aber er sieht niemals, dass die Gegenst?nde einander durchdringen. Die auf der Arbeitsplatte platzierten Gegenst?nde bleiben jeweils so stehen, wie sie hingestellt wurden, bis Benjamins Vater ein 作者: 貝雷帽 時(shí)間: 2025-3-26 21:40
Hideki Matsumura,Seijiro Furukawaer namhafteste Vertreter dieser Theorie war W. T. Powers. Er nannte seine Theorie ?Theorie der Regelung der Wahrnehmung“ (Perceptual Control Theory). Die Gedanken wurden sp?ter von C. S. Carver und M. F. Scheier aufgegriffen und zur Erkl?rung der Selbstregulation des Verhaltens beim Menschen herange作者: elucidate 時(shí)間: 2025-3-27 04:51
T. Matsumori,K. Miyazaki,S. Shigetomi Lehrern – gesehen? Nur mit ausdrücklicher Einwilligung der Jugendlichen k?nnen Quellen au?erhalb der Prim?rfamilie angefragt werden. gibt einen überblick über die Schwerpunkte und Zielsetzungen der entwicklungspsychopathologischen Diagnostik im Jugendalter.作者: 走路左晃右晃 時(shí)間: 2025-3-27 05:21 作者: tackle 時(shí)間: 2025-3-27 12:12
ence on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I w978-1-4684-2153-8978-1-4684-2151-4作者: maculated 時(shí)間: 2025-3-27 14:33 作者: MURKY 時(shí)間: 2025-3-27 19:31 作者: 軟膏 時(shí)間: 2025-3-28 00:02
F. H. Eisenn durch kurze Videos unterhaltsam erkl?rt und k?nnen via QR-Codes im Buch auch auf dem Smartphone angeschaut werden. – Das Beste: All das ist kostenlos! Lesen, H?ren, Sehen, Lehren und Lernen im Web - mehr kann ein Lehrbuch nicht bieten..978-3-662-45529-6Series ISSN 0937-7433 Series E-ISSN 2512-5214 作者: CHAR 時(shí)間: 2025-3-28 05:01
H. Müller,J. Gyulai,J. W. Mayer,F. H. Eisen,B. Welchn durch kurze Videos unterhaltsam erkl?rt und k?nnen via QR-Codes im Buch auch auf dem Smartphone angeschaut werden. – Das Beste: All das ist kostenlos! Lesen, H?ren, Sehen, Lehren und Lernen im Web - mehr kann ein Lehrbuch nicht bieten..978-3-662-45529-6Series ISSN 0937-7433 Series E-ISSN 2512-5214 作者: AUGER 時(shí)間: 2025-3-28 09:20
P. L. F. Hemment,B. J. Sealy,K. G. Stephensn durch kurze Videos unterhaltsam erkl?rt und k?nnen via QR-Codes im Buch auch auf dem Smartphone angeschaut werden. – Das Beste: All das ist kostenlos! Lesen, H?ren, Sehen, Lehren und Lernen im Web - mehr kann ein Lehrbuch nicht bieten..978-3-662-45529-6Series ISSN 0937-7433 Series E-ISSN 2512-5214 作者: addition 時(shí)間: 2025-3-28 12:51
K. Gamo,M. Takai,M. S. Lin,K. Masuda,S. Namban durch kurze Videos unterhaltsam erkl?rt und k?nnen via QR-Codes im Buch auch auf dem Smartphone angeschaut werden. – Das Beste: All das ist kostenlos! Lesen, H?ren, Sehen, Lehren und Lernen im Web - mehr kann ein Lehrbuch nicht bieten..978-3-662-45529-6Series ISSN 0937-7433 Series E-ISSN 2512-5214 作者: 業(yè)余愛(ài)好者 時(shí)間: 2025-3-28 15:44 作者: 懲罰 時(shí)間: 2025-3-28 19:33 作者: 諄諄教誨 時(shí)間: 2025-3-28 23:59 作者: 突變 時(shí)間: 2025-3-29 04:56
E. B. Stoneham,J. F. Gibbonsn auch geeignet für Studierende der Erziehungswissenschaften und im Lehramtsstudium sowie für alle, die sich beruflich oder privat für die faszinierenden Entwicklungen im Kindes- und Jugendalter interessieren.?.978-3-662-59192-5Series ISSN 0937-7433 Series E-ISSN 2512-5214 作者: fallible 時(shí)間: 2025-3-29 07:29 作者: HARD 時(shí)間: 2025-3-29 13:43 作者: 花費(fèi) 時(shí)間: 2025-3-29 18:57
Ion Implantation of Cd and Te in GaAs Crystalscs by means of He ion channeling and photoluminescence measurements. It was found by channeling angular scan measurements that high substitutional fraction of Te and Cd was obtained by the implantations between 200 and 300°C. For implantations above 200°C defect peak appears at the depth deeper by 3作者: 漫步 時(shí)間: 2025-3-29 20:50
Implantation of Silicon Into Gallium Arsenidegh electron concentration. The dependence of sheet resistivity, surface carrier concentration and mobility on dose, implantation temperature and annealing temperature was determined. Peak doping levels are about 3x10... for 340°C implantation with 10.cm. dose. Diffusion of implanted silicon was also作者: 表示問(wèn) 時(shí)間: 2025-3-30 03:05 作者: 廚房里面 時(shí)間: 2025-3-30 05:46
The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0., and P prior to annealing. In particular, the diffusion rate of the implanted Zn during the anneal can be strongly inhibited by the co-implantation of As or P, whereas Ga implantation has only a minor effect.作者: AVOID 時(shí)間: 2025-3-30 09:50
Compensating Layers in GaAs by Ion Implantation: Application to Integrated Opticsa few examples of optical waveguides in near IR region realized by H. implantation and we discuss the using 0. implanted layers to realize light guides as the compensation at high anneal temperatures is stable.作者: FATAL 時(shí)間: 2025-3-30 13:34
Electrical Properties of Proton Bombarded N-Type GaAsckness of the semi-insulating layer produced by the bombardments is nearly equal to the projected proton range. Prom Hall-effect measurements, it is found that the donor level of 0.15 eV is created by proton bombardments.作者: 鼓掌 時(shí)間: 2025-3-30 17:09
Photoluminescence of Zinc Implanted n-Type GaAs (100) orientation were impIanted with Zn in a dose range of 5 x 10 to 5 x 10 ions/cm. and were subsequently annealed for 20 min at temperatures between 600°C and 900°C. A well-defined single emission peak due to Zn acceptor level was obtained in samples implanted with a dose of 1 x 10 ions/cm and a作者: Ascribe 時(shí)間: 2025-3-30 23:13
Large Increase of Emission Efficiency in Indirect GaAsP by N-Ion Implantationat 350°C with N ions to concentration 10.. 10. cm.. Two conspicuous bands, in the general locations of 599.5 nm and 618 nm at 2K, appear as a result of annealing. They are due to isoelectronic impurities and the narrow band (599.5 nm) is attributed to ‘A’ line and the broad band (618 nm) is to NN li作者: 清澈 時(shí)間: 2025-3-31 01:54
Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38been studied. Electrical activities, approximately independent of Zn dose, increased with annealing temperature, and reached about 100% at 950°C. Previously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and 作者: Autobiography 時(shí)間: 2025-3-31 08:42 作者: 手術(shù)刀 時(shí)間: 2025-3-31 12:26 作者: orient 時(shí)間: 2025-3-31 17:17
Behaviors of Ga and P Damages Introduced by Ion-Implantation into GaPplanted at room temperature, in order to know effects of damage difference between Ga and P on electrical properties of amphoteric impurity in GaP. As results, it was found that total amount of P damage as implanted state tended to become more than that of Ga damage with decrease of implanted ion do作者: CLEAR 時(shí)間: 2025-3-31 17:48 作者: Increment 時(shí)間: 2025-3-31 22:12 作者: 平息 時(shí)間: 2025-4-1 03:16
erholen.Fit für die Prüfung: Mit Fallbeispielen, Definitione.Dieses Lehrbuch beantwortet alle prüfungsrelevanten Fragen des psychologischen Grundlagenfachs "Entwicklungspsychologie", behandelt die zentralen Bereiche Motorik, Sensorik, Kognition, Intelligenz, Emotion, Sprache, Selbstkonzept, Moral, E作者: voluble 時(shí)間: 2025-4-1 09:05 作者: TERRA 時(shí)間: 2025-4-1 12:33 作者: 影響深遠(yuǎn) 時(shí)間: 2025-4-1 15:29
P. L. F. Hemment,B. J. Sealy,K. G. Stephenserholen.Fit für die Prüfung: Mit Fallbeispielen, Definitione.Dieses Lehrbuch beantwortet alle prüfungsrelevanten Fragen des psychologischen Grundlagenfachs "Entwicklungspsychologie", behandelt die zentralen Bereiche Motorik, Sensorik, Kognition, Intelligenz, Emotion, Sprache, Selbstkonzept, Moral, E
