作者: 事情 時(shí)間: 2025-3-21 21:21
Electrical Measuring Techniquesable information regarding the energy and purity of the ion beam. The techniques are discussed mainly with respect to measurements on implanted silicon wafers but they may be applied more generally to any semiconductor.作者: BUOY 時(shí)間: 2025-3-22 04:22
Faraday Cup Designs for Ion Implantation flux and areal distribution of the dopant material. A given target response to the incident ions can be used as a continuous monitor of the implant status and, under proper conditions, can provide a means for closed-loop process control.作者: 品牌 時(shí)間: 2025-3-22 06:00
Range Distributionstended to calculate higher moments of the range distributions. Winterbon [3] calculated 4 moments of range distributions for many ion- target combinations; however, no easily accessible tables or formulas (such as those by Gibbons [4], Smith [5],and Biersack [29]) are available. Only Gibbons gives an estimate of the third moment.作者: 失眠癥 時(shí)間: 2025-3-22 11:39 作者: intrigue 時(shí)間: 2025-3-22 16:29
Standard High-Voltage Power Supplies for Ion Implantationmake a decision on the standardization of the power supply. Standardization means compromising and giving up the possibility of covering the entire range of users electrical data. In our standard line of high-voltage dc power supplies, special consideration is given to the following basic design features:作者: 褪色 時(shí)間: 2025-3-22 19:56
Springer Series in Electronics and Photonicshttp://image.papertrans.cn/i/image/475170.jpg作者: gerontocracy 時(shí)間: 2025-3-22 23:10
https://doi.org/10.1007/978-3-642-68779-2Absorption; Apertur; Plasmat; computer; design; development; machine; material; mechanisms; model; production; 作者: 使長(zhǎng)胖 時(shí)間: 2025-3-23 02:18
Ion Implantation System Concepts the presently available commercial equipment is presented. The system-limiting aspects, such as throughput, uniformity, wafer heating, energy range, wafer size, charge-up, and contamination, are reported in detail. Finally, some remarks on the operation and control of an ion implanter are made.作者: interrogate 時(shí)間: 2025-3-23 07:34 作者: 笨重 時(shí)間: 2025-3-23 10:32 作者: BLA 時(shí)間: 2025-3-23 14:12
Ion Implantation Equipment from Veecoe major goals were to serve the requirements of both development and production, using the same basic system with modified end stations, with a high-quality standard to make the systems reliable tools with a minimum in downtime. In the following paragraphs, we present a summarized description of our developments.作者: gout109 時(shí)間: 2025-3-23 19:22 作者: 踉蹌 時(shí)間: 2025-3-24 02:15 作者: Supplement 時(shí)間: 2025-3-24 03:29
The Series IIIA and IIIX Ion ImplantersThe demand for high-current ion implanters in the semiconductor industry has increased substantially over the last 3–4 years and the requirement has divided into two categories:作者: FLUSH 時(shí)間: 2025-3-24 08:35
978-3-642-68781-5Springer-Verlag Berlin Heidelberg 1982作者: deadlock 時(shí)間: 2025-3-24 12:24 作者: Extort 時(shí)間: 2025-3-24 15:04 作者: 種屬關(guān)系 時(shí)間: 2025-3-24 19:06 作者: Fabric 時(shí)間: 2025-3-25 00:39
The Calculation of Ion Ranges in Solids with Analytic Solutions of prescribing differential scattering cross sections. It turned out that this can be accomplished by connecting directional angular spread to the nuclear energy loss directly, and that this approach yields good agreement with other existing theories and experimental results on projected ranges. Th作者: 顯赫的人 時(shí)間: 2025-3-25 07:08 作者: 大廳 時(shí)間: 2025-3-25 08:40 作者: 典型 時(shí)間: 2025-3-25 13:30
zsteuerrecht des Staates besteuert werden, in dem der Verbrauch stattfindet. Die Europ?ische Kommission hat insoweit einen Richtlinienvorschlag vorgelegt, der grunds?tzlich zur Probleml?sung geeignet ist. Danach findet die Umsatzbesteuerung grunds?tzlich in dem Staat statt, in dem der Empf?nger ans?作者: Aviary 時(shí)間: 2025-3-25 16:44 作者: grounded 時(shí)間: 2025-3-25 20:17
Hans Glawischnigtution bei gleichzeitiger Orientierung auf differenzierte Nachfragestrukturen notwendig. Dies aber erfordert unter organisatorischen Gesichtspunkten die Etablierung strategischer Allianzen sowie in didaktisch-methodischer Hinsicht eine Weiterentwicklung der teilweise praktizierten Distance-Learning-作者: Migratory 時(shí)間: 2025-3-26 03:06
D. Aitkentution bei gleichzeitiger Orientierung auf differenzierte Nachfragestrukturen notwendig. Dies aber erfordert unter organisatorischen Gesichtspunkten die Etablierung strategischer Allianzen sowie in didaktisch-methodischer Hinsicht eine Weiterentwicklung der teilweise praktizierten Distance-Learning-作者: glans-penis 時(shí)間: 2025-3-26 07:34 作者: 影響 時(shí)間: 2025-3-26 12:16
R. Bustin,P. H. Roseerhalte geworfen oder Herangehensweisen an neuartige, erst durch die fortschreitende technische und konzeptionelle Entwicklung m?glich gewordene Fragestellungen, erarbeitet. In manchen F?llen mag sich hinter ?neuen blumigen Konzepten“ auch ?ein alter Hut“ verbergen.作者: LITHE 時(shí)間: 2025-3-26 15:51 作者: 的闡明 時(shí)間: 2025-3-26 20:23 作者: regale 時(shí)間: 2025-3-27 00:23 作者: cancellous-bone 時(shí)間: 2025-3-27 03:11 作者: Obituary 時(shí)間: 2025-3-27 06:31 作者: Liberate 時(shí)間: 2025-3-27 12:37
M. I. Current,D. S. Perloff,L. S. Gutaiangs recht ungewi?, ob und in welchem Umfang mit Expertenauskünften zu rechnen sei. Aus prophylaktischen bzw. kompensatorischen Gründen hielten wir es deshalb für geraten, auf diesem Feld eigene Erhebungen durchzuführen. Sie konnten angesichts der knappen Personal- und Zeitressourcen nur als Kurzrec作者: BLAZE 時(shí)間: 2025-3-27 15:50
P. Eichinger,H. Rysseles mit diesem Bedeutungsgehalt eingedeutschten Begriffs ’Kontrolle’ erh?hen sich durch das übersetzungsproblem, denn: Der sprachliche- und damit weitgehend auch der konzeptionelle - Transfer von ’Control’ in ’Kontrolle’ ist dadurch erheblich erschwert, da? sich der Bedeutungsgehalt der Termini in de作者: Fsh238 時(shí)間: 2025-3-27 21:21 作者: 兇兆 時(shí)間: 2025-3-27 23:58 作者: Commission 時(shí)間: 2025-3-28 02:05
Ion Implantation System Concepts the presently available commercial equipment is presented. The system-limiting aspects, such as throughput, uniformity, wafer heating, energy range, wafer size, charge-up, and contamination, are reported in detail. Finally, some remarks on the operation and control of an ion implanter are made.作者: 間諜活動(dòng) 時(shí)間: 2025-3-28 07:23
Faraday Cup Designs for Ion Implantation bulk material diffusions, its extendability to large target dimensions, and its ability to be mask-defined with small lateral spreading and controlled depths [1–3], In its practical execution, ion implantation employs the electromagnetic properties of the ions to regulate the energy, species, total作者: 犬儒主義者 時(shí)間: 2025-3-28 10:49
Safety and Ion Implantersradiation, toxic chemicals, high voltages and mechanical forces capable of causing serious harm all exist. Manufacturers build equipment with interlock systems which are capable of protecting the operator from harm. Maintenance procedures are also safe, provided that proper procedures are followed, 作者: PLAYS 時(shí)間: 2025-3-28 15:44 作者: 功多汁水 時(shí)間: 2025-3-28 20:43
Range Distributionsgiven by symmetrical Gaussian distributions. Experiments have shown, however, that profiles are skewed and possess tails, not only in crystalline semiconductors where channeling of ions may occur. These experimental findings are confirmed by numerical Monte Carlo simulations. Both theories can be ex作者: NEEDY 時(shí)間: 2025-3-29 01:52
Electrical Measuring Techniquesimplanted impurities and their uniformity laterally across the sample. In addition, depth profiling methods will be considered as these can yield valuable information regarding the energy and purity of the ion beam. The techniques are discussed mainly with respect to measurements on implanted silico作者: Engaging 時(shí)間: 2025-3-29 06:35
Wafer Mapping Techniques for Characterization of Ion Implantation Processingping non-uniformity of ion-implantation equipment. Examples are provided which illustrate the use of these techniques for establishing performance norms for production implantation equipment, for diagnosing equipment malfunctions and for characterizing phenomona such as wafer heating effects in high作者: 慢慢流出 時(shí)間: 2025-3-29 10:22
Non-Electrical Measuring Techniques implanted species, generally together with an evaluation of the damage produced by the ion bombardment. Thermal or beam annealing of implanted samples.results in a rearrangement of the impurity and host-material configuration via diffusion and lattice reconstruction. Following a short review of the作者: BUDGE 時(shí)間: 2025-3-29 12:24 作者: Reclaim 時(shí)間: 2025-3-29 15:40
Evolution and Performance of the Nova NV-ID Predep? Implanterrformance objectives and machine configuration were established in November 1978 and have not changed significantly since (see Section 2). However, the system and subsystem designs have evolved along the expected learning curve. Sixty systems have now been shipped and a pattern of actual performance作者: ABIDE 時(shí)間: 2025-3-29 20:43 作者: Substitution 時(shí)間: 2025-3-30 03:36 作者: PSA-velocity 時(shí)間: 2025-3-30 06:29
dert werden. Daher verbieten sich spezielle Steuern für die Informationsübermittlung. Auf der anderen Seite kann es aber auch keinen steuerfreien Raum Internet geben. Dies gilt insbesondere auch für die Umsatzsteuer, die zu einem ganz wesentlichen Teil zur Finanzierung der ?ffentlichen Haushalte in 作者: fertilizer 時(shí)間: 2025-3-30 08:50 作者: 熔巖 時(shí)間: 2025-3-30 13:28 作者: CHECK 時(shí)間: 2025-3-30 18:12 作者: 準(zhǔn)則 時(shí)間: 2025-3-31 00:09 作者: 聲音刺耳 時(shí)間: 2025-3-31 02:07
R. Bustin,P. H. Rosertschaftli chen und logistischen Strukturen sowie der aktuell implementierten Management-und Beraterkonzepte fest im Griff. In kaum einer Disziplin sind modische Schlagworte in einem solchen Ausma? an der Tagesordnung wie in der Logistik. Ob es sich um Begriffe wie ?Supply Chain Management“, ?4 PL“,
