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標題: Titlebook: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon; Peter Pichler Book 2004 Springer-Verlag Wien 2004 Semiconductor.accep [打印本頁]

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書目名稱Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon影響因子(影響力)




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Isovalent Impurities, not have sufficed for a presentation of silicon-germanium materials in general. Tin, the last isovalent impurity considered here, has already limited technical applications. However, it was studied to investigate basic diffusion processes in silicon. The main results will be presented in Section 4.3.
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Halogens,ects were also mentioned in the literature. In addition, fluorine was found to enhance oxide growth and to reduce the associated generation of self-interstitials. Its presence at silicon/silicon dioxide interfaces was associated with a variety of advantages while fluorine in the bulk of oxides may have detrimental effects.
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Book 2004rst comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and sp
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Chalcogens,, and tellurium, were found to show the expected double-donor properties. They were also found to be very similar, showing a tendency to form pairs which also act as double donors. A comprehensive review of their properties was given by Grimmeiss and Janzén [.]. For the sake of space, only the most important facts can be recapitulated here.
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Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon978-3-7091-0597-9Series ISSN 0179-0307
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0179-0307 n to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.978-3-7091-7204-9978-3-7091-0597-9Series ISSN 0179-0307
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isdescribed. Through the discussion of the result, it is concluded that both EDMs and the Higgs physics verify the scenario completely. The whole discussion in this thesis causes us to accept the current situa978-981-13-1008-9Series ISSN 2190-5053 Series E-ISSN 2190-5061
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Peter Pichler isdescribed. Through the discussion of the result, it is concluded that both EDMs and the Higgs physics verify the scenario completely. The whole discussion in this thesis causes us to accept the current situa978-981-13-1008-9Series ISSN 2190-5053 Series E-ISSN 2190-5061
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Peter PichlerDiscusses phenomena related to electroweak baryogenesis.Veri.This thesis focuses on one of the mechanisms for solving the baryon asymmetry of the Universe (BAU) which is a long-standing open question in both particle physics and cosmophysics. Electroweak baryogenesis (EWBG) is one attractive hypothe
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Peter Pichlertralino can be a candidate for the dark matter, and the problem is solved by canceling the correction of the Higgs boson mass. Further, SUSY can explain the experimental result of the muon magnetic moment (g-2)...This book presents a search for electroweakinos—the superpartners of the SM electroweak
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Impurity Diffusion in Silicon,discuss the atomistic processes associated with the diffusion of impurities and their interaction with intrinsic point defects in more detail. In Section 3.1, the various mechanisms for diffusion of impurities in silicon are introduced and discussed. Most important for impurities residing predominan
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Chalcogens, of them, does not fit into this scheme. It assumes predominantly bond-centered interstitial sites. Three other members of the group, sulfur, selenium, and tellurium, were found to show the expected double-donor properties. They were also found to be very similar, showing a tendency to form pairs wh
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Halogens,es like BF. instead. It shows, as discussed in Section 7.1, a very complex diffusion behavior and has a marked influence on the diffusion of dopants during post-implantation annealing. In general, shallower profiles with a higher degree of electrical activation are expected although some adverse eff
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Book 2016ionally respected experts from academic and institutional backgrounds. It offers an in-depth perspective on the immigration framework, together with the evolution of European and international political decisions on the management of immigration. Readers will be introduced to new international decis




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