標(biāo)題: Titlebook: Into The Nano Era; Moore‘s Law Beyond P Howard R. Huff Book 2009 Springer-Verlag Berlin Heidelberg 2009 CMOS.Counter.Defects.MOSFET devices [打印本頁(yè)] 作者: relapse 時(shí)間: 2025-3-21 17:17
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作者: ALLAY 時(shí)間: 2025-3-21 20:21
Howard R. HuffProvides a unique insight into the development of Si-based micro- and nanoelectronics.Analyzes the historic developments and presents the current state-of-the-art, giving a survey of the currently mos作者: 別名 時(shí)間: 2025-3-22 01:54 作者: CALL 時(shí)間: 2025-3-22 07:38
978-3-642-09397-5Springer-Verlag Berlin Heidelberg 2009作者: septicemia 時(shí)間: 2025-3-22 12:40 作者: cochlea 時(shí)間: 2025-3-22 14:35
Silicon: Child and Progenitor of Revolutionsilicon. Argument at once broke out among the scientific elite as to whether the newly found element was a metal or an insulator. It took more than a century to settle that disagreement decisively: As so often, when all-or-nothing alternatives are fiercely argued, the truth turned out to be neither all nor nothing.作者: Infelicity 時(shí)間: 2025-3-22 17:48
Enhanced Carrier Mobility for Improved CMOS Performancely difficult to further reduce critical dimensions such as gate oxide thickness, alternative methods of improving transistor performance are also being employed. One important approach is to increase the electron and hole mobility.作者: adumbrate 時(shí)間: 2025-3-23 00:38
Transistor Scaling to the Limitotential barrier) of the device itself. As a result, MOSFET scaling was able to progress at an exponential rate [.], yielding commensurate improvements in integration, cost, and performance, with revolutionary impact to usher in the Information Age.作者: Anal-Canal 時(shí)間: 2025-3-23 03:47 作者: Acupressure 時(shí)間: 2025-3-23 05:42
Nano-Whatever: Do We , Know Where We Are Heading?cs and technology. The prefix . suddenly gets attached to everything (this conference is no exception), and we are deluged with predictions about fantastic future applications, often promised for the immediate future.作者: 大暴雨 時(shí)間: 2025-3-23 10:11 作者: intercede 時(shí)間: 2025-3-23 17:39 作者: calorie 時(shí)間: 2025-3-23 22:02
Hybrid CMOS/Molecular Integrated Circuits (RTD), rapid single flux quantum logic (RSFQ), spin devices, quantum dots, and molecular electronics are just a few of the novel alternatives being actively investigated [.]. Of these technologies, molecular electronics has preliminary results that promise high device densities and fast switching speeds.作者: 盡責(zé) 時(shí)間: 2025-3-24 00:43 作者: intelligible 時(shí)間: 2025-3-24 04:04
Quantum Computinggh it may eventually benefit from some avenues in nano research. It is not about a new use of quantum effects in transistors, and it is decidedly not of any use in supplementing or enhancing the performance of CMOS logic. At present, it is a technology that is essentially nonexistent.作者: GEM 時(shí)間: 2025-3-24 08:20 作者: BABY 時(shí)間: 2025-3-24 11:25
0933-033X rrent state-of-the-art, giving a survey of the currently mos.Even as we enter the nanotechnology era, we are now encountering the 50th anniversary of the invention of the IC. Will silicon continue to be the pre-eminent material and will Moore.TM.’s Law continue unabated, albeit in a broader economic作者: 新手 時(shí)間: 2025-3-24 16:03
0933-033X cro-electronics era. By better assessing and understanding the past five decades of this era, it is proposed that a firmer foundation can be laid for the research that will ensue and possibly provide a glimpse of what is next to come in the nanotechnology era..978-3-642-09397-5978-3-540-74559-4Series ISSN 0933-033X Series E-ISSN 2196-2812 作者: IVORY 時(shí)間: 2025-3-24 20:32 作者: 捏造 時(shí)間: 2025-3-24 23:55 作者: 動(dòng)脈 時(shí)間: 2025-3-25 04:23
Surface and Interface Chemistry for Gate Stacks on Siliconures, until recently remained the gate insulator of choice. Its success has been based on the wonderful properties of the silicon/silicon dioxide interface. This interface has only about 10. cm. electrically active defects. And after a simple passivating hydrogen exposure, 10. cm. defects remain—only one defect for every 100,000 interface atoms!作者: hermitage 時(shí)間: 2025-3-25 10:16
Book 2009he past five decades of this era, it is proposed that a firmer foundation can be laid for the research that will ensue and possibly provide a glimpse of what is next to come in the nanotechnology era..作者: 江湖郎中 時(shí)間: 2025-3-25 13:00 作者: 喚醒 時(shí)間: 2025-3-25 17:02
The Economic Implications of Moore’s Law industry crossed it just after the second millennium had finished. In less than 50 years, it had come from transistors made in mils (one-thousandth of an inch or 25.4 microns); to integrated circuits which were popularized as microchips; and then as the third millennium dawned, nanochips. At this w作者: CESS 時(shí)間: 2025-3-25 22:22
Using Silicon to Understand Siliconnot always been that way. There was a time before silicon. In the 1940s, transistors did not exist at all and in the early 1950s, transistors were made of germanium, not silicon. These germanium transistors were not very reliable; in particular they were difficult to package and process, and worked 作者: drusen 時(shí)間: 2025-3-26 03:44 作者: 壕溝 時(shí)間: 2025-3-26 04:41
Structural, Elemental, and Chemical Complex Defects in Silicon and Their Impact on Silicon Devicesct-free silicon would be a highly resistive material that would not find many practical applications before adding impurities to dope it n-type or p-type. In practice, besides intentionally introduced impurities (dopants), silicon always contains native defects (self-interstitials and vacancies) and作者: 輕浮思想 時(shí)間: 2025-3-26 09:00
Surface and Interface Chemistry for Gate Stacks on Silicon four decades, we have witnessed an exponential increase in the integration density of logic circuits (“Moore’s law” [.]), powered by exponential reductions in MOSFET device size. Despite these changes, silicon oxide, usually grown by simple exposure to oxygen gas or water vapor at elevated temperat作者: murmur 時(shí)間: 2025-3-26 13:12 作者: jealousy 時(shí)間: 2025-3-26 20:24 作者: brachial-plexus 時(shí)間: 2025-3-26 22:23 作者: 集中營(yíng) 時(shí)間: 2025-3-27 03:18 作者: choroid 時(shí)間: 2025-3-27 08:13 作者: brother 時(shí)間: 2025-3-27 11:19 作者: allude 時(shí)間: 2025-3-27 17:19 作者: Herbivorous 時(shí)間: 2025-3-27 18:05
Silicon Forever! Really?interacts with it almost constantly. Yes, the world’s commerce and communication have become unthinkable without it. Yes, most of today’s products are designed or refined by “silicon.” Yes, it is a showcase for what humans can wring off from Mother Nature through clever engineering. However, what ul作者: ERUPT 時(shí)間: 2025-3-27 22:47 作者: Substance 時(shí)間: 2025-3-28 04:38
nergy and resource management are of increasing importance aWith the global demand for energy skyrocketing, over the past twenty years many countries have restructured their electric power industries, typically moving from a regulated monopoly to a competitive market structure.The results of these r作者: Expertise 時(shí)間: 2025-3-28 08:36
J. R. Chelikowskyrams in smart grids.This book analyzes new electricity pricing models that consider uncertainties in the power market due to the changing behavior of market players and the implementation of renewable distributed generation and responsive loads. In-depth chapters examine the different types of marke作者: Bone-Scan 時(shí)間: 2025-3-28 11:36 作者: 推延 時(shí)間: 2025-3-28 18:21
A. A. Istratov,T. Buonassisi,E. R. Webers surpassed all expectations and demand response (DR) has emerged as a key element of market design. Most European countries have already opened their markets to the participation of demand response and, over the long-term, DR will probably reach its full potential as the entire range of DR programs作者: 著名 時(shí)間: 2025-3-28 18:55
M. M. Frank,Y. J. Chabals to deal with the associated problems. The consensus behind smart grids (SGs) as one of the most promising solutions for the massive integration of renewable energy sources in power systems has led to the development of several prototypes that aim at testing and validating SG methodologies. The urg作者: 開頭 時(shí)間: 2025-3-29 01:52
P. M. Mooneyows the user to conduct a wide range of simulations regarding the behavior and outcomes of electricity markets (EMs), including markets with large penetrations of renewable energy. In each simulation, different autonomous software agents are used to capture the heterogeneity of EMs, notably generati作者: Decibel 時(shí)間: 2025-3-29 04:53
T. -J. K. Liu,L. Changlligent agents and multi-agent systems include the ability to provide solutions to problems that can naturally be regarded as a society of autonomous interacting components, to solve problems that are too large for a centralized agent to solve, and to provide solutions in situations where expertise 作者: FLUSH 時(shí)間: 2025-3-29 08:26
d the world. Among other advantages, wind-based electricity is cheap and complies with environmental constraints. In this chapter, we approach the process of producing electricity using Wind Turbine Generators (WTGs). To be able of performing such computation, two types of information are required. 作者: 防水 時(shí)間: 2025-3-29 14:06 作者: accordance 時(shí)間: 2025-3-29 17:14
H. L. Stormerth oil–paper insulation. Since then, the cable systems have been further developed and evolved as a reaction to societal, grid and environmental needs. The technical responses have driven the cable industry to a vivid playground for advanced technologies. Paper–oil insulated cables are now accompani作者: Kaleidoscope 時(shí)間: 2025-3-29 20:23
tions are propelling the industry instinctively and in a secular fashion towards restructuring. That the industry will change is a fait accomplii. The nature and timing of the change is still a matter of intense debate, however. Because of the evolution of the industry into its present-day form, i.e作者: 細(xì)絲 時(shí)間: 2025-3-30 00:05
Using Silicon to Understand Siliconmediately raises power outputs and doubles operating temperatures! The potential application of this entirely new transistor is so great that major electronics firms have been conducting silicon experiments for some time. — Texas Instruments Press Release.. 作者: predict 時(shí)間: 2025-3-30 05:37
