標(biāo)題: Titlebook: Highly Integrated Gate Drivers for Si and GaN Power Transistors; Achim Seidel,Bernhard Wicht Book 2021 The Editor(s) (if applicable) and T [打印本頁] 作者: 支票 時間: 2025-3-21 19:48
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors影響因子(影響力)
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors影響因子(影響力)學(xué)科排名
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors網(wǎng)絡(luò)公開度
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors被引頻次
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors被引頻次學(xué)科排名
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors年度引用
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors年度引用學(xué)科排名
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors讀者反饋
書目名稱Highly Integrated Gate Drivers for Si and GaN Power Transistors讀者反饋學(xué)科排名
作者: 蜿蜒而流 時間: 2025-3-21 22:03
Book 2021s robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and作者: 可轉(zhuǎn)變 時間: 2025-3-22 04:26 作者: Obedient 時間: 2025-3-22 06:22
Highly Integrated Gate Drivers for Si and GaN Power Transistors978-3-030-68940-7作者: 笨拙的你 時間: 2025-3-22 10:02
Introduction,one reason that pushes the trend towards higher integration levels of gate drivers. Especially, in applications with a large number of power switches, gate drivers contribute significantly to the circuit board volume. Highly integrated GaN half-bridges including the gate driver circuit in a single p作者: Vertebra 時間: 2025-3-22 13:52
Gate Drivers Based on High-Voltage Energy Storing (HVES), 11 nC gate charge from integrated buffer capacitors (no external components), suitable for nearly all commercially available GaN transistors. The chapter also contains a thorough analysis of HVES in comparison to the conventional setup and to HVCS.作者: 輕信 時間: 2025-3-22 19:55
rom numerous books, journals, and authorities in the field of artificial intelligence and expert systems. I hope this compilation of information will help clarify the terminology for artificial intelligence and expert systems‘ activities. Your comments, revisions, or questions are welcome. V. Daniel Hunt Spri978-1-4612-9388-0978-1-4613-2261-0作者: Adulate 時間: 2025-3-22 23:11
Achim Seidel,Bernhard Wichtrom numerous books, journals, and authorities in the field of artificial intelligence and expert systems. I hope this compilation of information will help clarify the terminology for artificial intelligence and expert systems‘ activities. Your comments, revisions, or questions are welcome. V. Daniel Hunt Spri978-1-4612-9388-0978-1-4613-2261-0作者: white-matter 時間: 2025-3-23 01:59 作者: PAEAN 時間: 2025-3-23 09:07 作者: Ossification 時間: 2025-3-23 10:56 作者: reptile 時間: 2025-3-23 16:30 作者: 聯(lián)邦 時間: 2025-3-23 20:35
Achim Seidel,Bernhard Wichtns with the digital poster presentation system and the different discussion tools enabling a more automated skill evaluation and discussion mining. In addition, we argue that students’ heart rate (HR) data can be used to effectively evaluate their cognitive performance, specifically the performance 作者: 輕浮思想 時間: 2025-3-24 01:15 作者: 摸索 時間: 2025-3-24 05:26 作者: Perennial長期的 時間: 2025-3-24 08:57 作者: 假裝是我 時間: 2025-3-24 11:01 作者: 強(qiáng)制令 時間: 2025-3-24 16:52 作者: 不真 時間: 2025-3-24 19:59
978-3-030-68942-1The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl作者: 神秘 時間: 2025-3-25 02:02
Book 2021m switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonan作者: 莊嚴(yán) 時間: 2025-3-25 06:30
ive concepts including theory and design guidelines.Describe.This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC des作者: pulmonary-edema 時間: 2025-3-25 09:35 作者: 設(shè)想 時間: 2025-3-25 14:47
Gate Drivers Based on High-Voltage Charge Storing (HVCS),ts are presented. To maintain a permanently turned on gate driver, various charge pump concepts are compared. Based on a design guideline, an experimental gate driver output stage with HVCS is implemented that delivers a peak gate current of 2.6 A at a maximum driver output voltage of 15 V.作者: glans-penis 時間: 2025-3-25 17:16 作者: 懲罰 時間: 2025-3-25 21:21 作者: packet 時間: 2025-3-26 00:43
Conclusion,hree-level gate drive scheme. Applied to a large gate loop, formed by a distance of 25 cm between driver and power transistor (600 nH gate loop inductance), a specifically adapted driver shows a quick turn-on with very low overshoot as compared to a conventional gate driver circuit.作者: intrigue 時間: 2025-3-26 04:53 作者: forecast 時間: 2025-3-26 10:39 作者: Highbrow 時間: 2025-3-26 15:26
Achim Seidel,Bernhard Wichtresult, new terminology is appearing at a phenomenal rate. This sourcebook provides an introduction to artificial intelligence and expert systems, it provides brief definitions, it includes brief descriptions of software products, and vendors, and notes leaders in the field. Extensive support materi作者: 窩轉(zhuǎn)脊椎動物 時間: 2025-3-26 19:39 作者: FUME 時間: 2025-3-27 00:52 作者: Genistein 時間: 2025-3-27 04:49 作者: Thymus 時間: 2025-3-27 08:06 作者: LAY 時間: 2025-3-27 13:07
Achim Seidel,Bernhard Wichtization problems. Considering that the convergence and diversity of the population are two important indicators to measure the performance of the algorithm, a many-objective evolutionary algorithm with threshold elite selection strategy (MaOEA-TES) are proposed in this paper. The algorithm adopts th作者: 序曲 時間: 2025-3-27 17:37 作者: 果核 時間: 2025-3-27 18:39
Introduction,r the next decade in growth areas like renewable energy, e-mobility, or industry. A key approach for reducing the system size is increasing the switching frequency. While this is very effective in shrinking down the size of passives, higher dynamic losses lead to more cooling effort. In recent years作者: 流眼淚 時間: 2025-3-28 01:10 作者: Epithelium 時間: 2025-3-28 05:41
Gate Drivers Based on High-Voltage Charge Storing (HVCS),charge by increasing the voltage level at the capacitor. A size reduction by ～70% could be achieved lowering the integration cost or even might enable an onchip integration of the capacitor. This brings many advantages in terms of miniaturization, switching speed, and robustness. Three options for H作者: 不可思議 時間: 2025-3-28 07:55
Gate Drivers Based on High-Voltage Energy Storing (HVES),r to achieve a resonant behavior. The integrated inductor can be placed on top of the buffer capacitor without area penalty. This way, HVES enables fast and energy-efficient switching of discrete GaN transistors without the need of an external buffer capacitor. HVES offers several design scenarios, 作者: 和音 時間: 2025-3-28 12:29 作者: Lignans 時間: 2025-3-28 15:25
