作者: 背叛者 時(shí)間: 2025-3-21 22:28
Growth Surface as a Vacancy Generator in Vacuum Condensationt clearly evident during diffusional mass transfer occurring with the help of directional vacancy fluxes. In this instance, the transfer kinetics are determined by the presence and vigor of vacancy sources and sinks. It is known that structural defects of the crystals and mainly kinks in the surface作者: 表被動(dòng) 時(shí)間: 2025-3-22 02:43
Use of Photostimulated Vaporization During Growth of A2B5, A2B6, and A4B6 Filmsg irradiation by light with wavelengths in the range 0.25–1.2μ m increase several times compared with equivalent epitaxial processes and that the substrate surface is effectively cleaned and partially recrystallized before the growth.作者: glacial 時(shí)間: 2025-3-22 05:25
Growth of Bulk Silicon Carbide Single Crystalsals by spontaneous crystallization from the vapor at 2550–2600 ? was reported. During these years, numerous attempts have been made to perfect the method by optimizing the thermal fields in the growth zone and controlling crystal nucleation by adding perforated graphite crystallization inserts and s作者: 形狀 時(shí)間: 2025-3-22 09:28 作者: Indent 時(shí)間: 2025-3-22 16:32
Local Shaping and Growth from the Melt of Intricate Sapphire Articles on “Crystallization Center” Equbstantially changed as the crystal is pulled from the melt since the base of the melt column caught between the crystallization front and the shaper reproduces the geometry of the shaper edge. The size of the transverse cross section can be changed only within narrow limits, usually less than fract作者: Indent 時(shí)間: 2025-3-22 17:14 作者: FLAG 時(shí)間: 2025-3-22 22:34 作者: Keshan-disease 時(shí)間: 2025-3-23 03:52
Flux Growth and Properties of Oxide Crystalss the most universal method and enables crystals to be prepared from compounds melting with decomposition, experiencing reconstructive phase transitions at extremely high temperatures, etc. Other methods of growing these crystals are not always feasible. Secondly, the flux method is most interesting作者: 新手 時(shí)間: 2025-3-23 08:45 作者: 向外 時(shí)間: 2025-3-23 09:46 作者: DEVIL 時(shí)間: 2025-3-23 16:15
Microstructure and Electrophysical Properties of YBa2Cu3O7–δ Filmseir properties. An important part of this activity is the investigation of the growth mechanism of HTSC layers and the effect of the microstructure on their electro-physical properties. The perfection of the crystalline structure of the grains and the presence of intermediate phases seem to determin作者: 貧窮地活 時(shí)間: 2025-3-23 21:58 作者: misanthrope 時(shí)間: 2025-3-24 00:06 作者: LIMIT 時(shí)間: 2025-3-24 03:16 作者: 通情達(dá)理 時(shí)間: 2025-3-24 08:59
https://doi.org/10.1057/9780230605664g irradiation by light with wavelengths in the range 0.25–1.2μ m increase several times compared with equivalent epitaxial processes and that the substrate surface is effectively cleaned and partially recrystallized before the growth.作者: Dislocation 時(shí)間: 2025-3-24 14:32 作者: aristocracy 時(shí)間: 2025-3-24 18:44
https://doi.org/10.1007/978-3-658-43982-8ee of wettability, determined by the wetting angle ?, of the shaper by the melt is important. The wetting angle is minimal in the traditional Stepanov method with the shaper not wetted by the melt. In this instance, the shaped crystals that are grown more accurately reproduce the geometry of the sha作者: right-atrium 時(shí)間: 2025-3-24 19:17 作者: 消滅 時(shí)間: 2025-3-25 02:57
Charles Delmotte,Daniel Nientiedtined regarding the influence of vibrations on the nature of the growth and such parameters and properties of single crystals as the rate of nucleation and crystal growth [1–4], the shape of a freely growing crystal [3, 8], the incorporation of impurities into a crystal [10, 11, 19, 20], its local in作者: deficiency 時(shí)間: 2025-3-25 05:56 作者: KIN 時(shí)間: 2025-3-25 09:47
https://doi.org/10.1007/978-3-658-08615-2s the most universal method and enables crystals to be prepared from compounds melting with decomposition, experiencing reconstructive phase transitions at extremely high temperatures, etc. Other methods of growing these crystals are not always feasible. Secondly, the flux method is most interesting作者: 不可思議 時(shí)間: 2025-3-25 12:34
Charles F. Andrain,David E. Apterdies on the search for, synthesis of, and determination of the physical characteristics of an enormous number of various oxides mainly based on cuprates. The first result of this broad search was the observation of yttrium-alkaline-earth superconductors with higher transition temperatures into the s作者: 贊成你 時(shí)間: 2025-3-25 15:50 作者: incisive 時(shí)間: 2025-3-25 21:43
https://doi.org/10.1057/9781137291622eir properties. An important part of this activity is the investigation of the growth mechanism of HTSC layers and the effect of the microstructure on their electro-physical properties. The perfection of the crystalline structure of the grains and the presence of intermediate phases seem to determin作者: 松馳 時(shí)間: 2025-3-26 02:35 作者: 敲詐 時(shí)間: 2025-3-26 05:41
https://doi.org/10.1007/978-3-658-43982-8per, including those grown with a large cross section. The wetting angle is maximal in the Stepanov method with a wetted shaper. In these variations, the meniscus remains low. For this reason, the growth process becomes more stable and the melt is fed well from the crucible through the shaper capillary.作者: OASIS 時(shí)間: 2025-3-26 10:54 作者: 沙漠 時(shí)間: 2025-3-26 15:34 作者: Adenoma 時(shí)間: 2025-3-26 20:41
Local Shaping and Growth from the Melt of Intricate Sapphire Articles on “Crystallization Center” Eqions of a millimeter, without detaching the meniscus from the shaper edge. If the meniscus detaches from the edge, the growth becomes unstable and a given crystal shape is in general not reproducible [2].作者: 鞠躬 時(shí)間: 2025-3-26 21:38 作者: 骯臟 時(shí)間: 2025-3-27 03:21
Intellectuals, Cynicism, and Reality,activity. However, most methods of observing defects are not sensitive enough to reveal “weak electrical activity. ” Quantitative criteria for evaluating the degree of activity have not been developed.作者: byline 時(shí)間: 2025-3-27 08:43 作者: 盡責(zé) 時(shí)間: 2025-3-27 09:28 作者: indices 時(shí)間: 2025-3-27 14:26 作者: 跟隨 時(shí)間: 2025-3-27 21:41
https://doi.org/10.1057/9781403937858grew on the edges and corners of the macrooutgrowths or restructured point. The size of these was tens to hundreds of angstroms. Their local structure corresponded to that of the point [4–9]. These phenomena, first observed for tungsten, were demonstrated to be generalized over a number of other metals [10].作者: 沉思的魚 時(shí)間: 2025-3-27 23:24 作者: sigmoid-colon 時(shí)間: 2025-3-28 02:45 作者: 不在灌木叢中 時(shí)間: 2025-3-28 09:28
Vibrational Convection During the Growth of Crystals to hundreds of Hz) [4, 5, 8–11, 16, 17], and even subsonic ranges (from 0.5 to 5 Hz) [6, 7, 15] has been investigated. The displacement amplitudes are usually confined to several micrometers for ultrasound [18] and reach 10–25 mm in experiments on the influence of subsound [6, 7].作者: 大范圍流行 時(shí)間: 2025-3-28 12:48 作者: Jingoism 時(shí)間: 2025-3-28 17:29 作者: HEAVY 時(shí)間: 2025-3-28 22:13 作者: Interregnum 時(shí)間: 2025-3-29 01:17
Flux Growth and Properties of Oxide Crystalsrowth mechanisms to be obtained by studying their morphology and the relief of the faces. Fourthly, the flux method is most similar to the growth of crystals under natural conditions and additional information on their genesis can be obtained. In a number of instances, rather large crystals can be p作者: Albinism 時(shí)間: 2025-3-29 06:05
Microstructure and Electrophysical Properties of YBa2Cu3O7–δ Filmsienting effect. On (001)SrTiO. substrates, the c axis is usually perpendicular to the substrate although a horizontal placement has also been noted [3, 4, 6, 7]. Film orientations for which the ., ., and . axes are parallel to {100} SrTiO., i.e., the c axis of YBa.Cu.O. (YBCO) is parallel to the sub作者: Facet-Joints 時(shí)間: 2025-3-29 09:13
https://doi.org/10.1057/9781137296931ng to vacancy creep and defects in the crystalline structure that can propagate by diffusion. In multicomponent systems, vacancy fluxes arise during diffusion if the partial diffusion coefficients are different. Diffusional vacancy fluxes lead to Frenkel effects such as the development of porosity a作者: 背心 時(shí)間: 2025-3-29 11:47
Organisation of Parties in the EU, methods for growing silicon carbide crystals have been under development. A thermodynamic analysis of the growth of SiC single crystals from the melt demonstrated that the SiC melt itself can exist at temperatures greater than 3460 K and pressures greater than 10. MPa. This has not yet enabled the 作者: 皺痕 時(shí)間: 2025-3-29 16:20 作者: 邪惡的你 時(shí)間: 2025-3-29 20:48 作者: OUTRE 時(shí)間: 2025-3-30 01:28
https://doi.org/10.1007/978-3-319-65295-5Technologies capable of growing semiconducting heterostructures as thin films (～100? ) are necessary to the development of semiconducting quantum-size electronics. Such structures are presently fabricated mainly by molecular-beam epitaxy and gas-phase epitaxy from organometallic compounds.作者: 不出名 時(shí)間: 2025-3-30 04:57 作者: Incise 時(shí)間: 2025-3-30 08:46
Relaxational Liquid Epitaxy with Reverse Mass Transport and Its Potential for Preparing Thin Films oTechnologies capable of growing semiconducting heterostructures as thin films (～100? ) are necessary to the development of semiconducting quantum-size electronics. Such structures are presently fabricated mainly by molecular-beam epitaxy and gas-phase epitaxy from organometallic compounds.作者: Lipoma 時(shí)間: 2025-3-30 13:34
Characteristic Defects and Imperfections in KDP Crystals Grown at High RatesCrystals of the KDP group are widely used in various branches of science and technology as frequency doublers, modulators, laser gates, parametric generators, and other active elements of devices for controlling a laser beam in addition to videotransformers [1]. Large crystals with highly uniform physical properties are needed for these purposes.作者: Pillory 時(shí)間: 2025-3-30 18:49
https://doi.org/10.1057/9780230605664g irradiation by light with wavelengths in the range 0.25–1.2μ m increase several times compared with equivalent epitaxial processes and that the substrate surface is effectively cleaned and partially recrystallized before the growth.作者: macabre 時(shí)間: 2025-3-31 00:41
Political Religion Beyond Totalitarianismin surface films to be determined. The first developed method was monochromatic ellipsometry, which was limited as such. Recently, spectral ellipsometry (SE) has been extensively developed and has enabled the abilities of the method to be widely expanded.作者: boisterous 時(shí)間: 2025-3-31 03:07 作者: Barrister 時(shí)間: 2025-3-31 08:28
Application of Ellipsometry in Studies of the Growth of Crystals and Thin Filmsin surface films to be determined. The first developed method was monochromatic ellipsometry, which was limited as such. Recently, spectral ellipsometry (SE) has been extensively developed and has enabled the abilities of the method to be widely expanded.作者: Exposure 時(shí)間: 2025-3-31 09:29
Gaining Greater Cultural Awarenesstor zeitlich und ?rtlich entkoppelt vom anschlie?enden Verbrennungsvorgang stattfinden. Die Gemischbildung beim Ottomotor setzt sich aus den vier Aufgaben zusammen [4.1]: Gemischdosierung (Menge und Zusammensetzung) Gemischaufbereitung (Zerst?ubung, Verdampfung, Vermischung) Gemischtransport Gemischverteilung
