標題: Titlebook: GaN and SiC Power Devices; From Fundamentals to Maurizio Di Paolo Emilio Book 2024 The Editor(s) (if applicable) and The Author(s), under e [打印本頁] 作者: Goiter 時間: 2025-3-21 18:24
書目名稱GaN and SiC Power Devices影響因子(影響力)
書目名稱GaN and SiC Power Devices影響因子(影響力)學科排名
書目名稱GaN and SiC Power Devices網絡公開度
書目名稱GaN and SiC Power Devices網絡公開度學科排名
書目名稱GaN and SiC Power Devices被引頻次
書目名稱GaN and SiC Power Devices被引頻次學科排名
書目名稱GaN and SiC Power Devices年度引用
書目名稱GaN and SiC Power Devices年度引用學科排名
書目名稱GaN and SiC Power Devices讀者反饋
書目名稱GaN and SiC Power Devices讀者反饋學科排名
作者: Habituate 時間: 2025-3-21 23:57
GaN and SiC Power Devices978-3-031-50654-3Series ISSN 2690-0300 Series E-ISSN 2690-0327 作者: neurologist 時間: 2025-3-22 01:24 作者: 有效 時間: 2025-3-22 06:50 作者: Ondines-curse 時間: 2025-3-22 08:52
Tumors and Tumor-Like Lesions of BoneIn this chapter, we will thoroughly examine the key attributes of power devices based on Gallium Nitride (GaN). Our focus will encompass an in-depth exploration of their electrical characteristics and driving mechanisms. Additionally, we will provide a comprehensive analysis of the manufacturing processes involved in the production of GaN devices.作者: 天氣 時間: 2025-3-22 13:51 作者: 天氣 時間: 2025-3-22 20:43 作者: 誘惑 時間: 2025-3-22 22:29
Power Electronics Processing,Several notable applications of power electronics may be discussed alongside the fundamental principle of power processing. Power electronics is the technology that processes and manages the flow of electric power by varying and providing voltage and current in an optimal manner for the load and the end user.作者: 閃光東本 時間: 2025-3-23 03:38
Gallium Nitride,Gallium Nitride (GaN) is a wide-bandgap semiconductor material that has gained significant attention in recent years due to its exceptional properties and wide-ranging applications in electronics, optoelectronics, and power devices.作者: 多樣 時間: 2025-3-23 05:45 作者: sclera 時間: 2025-3-23 11:32 作者: 谷類 時間: 2025-3-23 14:52 作者: Strength 時間: 2025-3-23 21:07
Maurizio Di Paolo EmilioProvides a single-source reference on power circuit design with wide bandgap semiconductors.Covers both theoretical and practical aspects of circuit design with GaN and SiC devices.Explains principles作者: Concomitant 時間: 2025-3-23 22:15 作者: nitric-oxide 時間: 2025-3-24 04:00
https://doi.org/10.1007/978-3-031-50654-3Wide Bandgap Semiconductors for Power Electronics; Vertical GaN and SiC Power Devices; Gallium Nitride作者: modish 時間: 2025-3-24 08:06 作者: Chronic 時間: 2025-3-24 13:35
https://doi.org/10.1007/978-1-4612-5700-4p, WBG materials are more desirable for power electronics converters due to several factors. This chapter delves into the fascinating world of Wide-Bandgap materials and examines why they have become the darlings of the power electronics community.作者: 調整校對 時間: 2025-3-24 15:53 作者: Complement 時間: 2025-3-24 19:58
Gert-Martin Greuel,Gerhard Pfisternsformative shift. Silicon Carbide (SiC) devices have emerged as the vanguards of this technological revolution, promising unparalleled efficiency, reduced energy wastage, and compact solutions across a myriad of applications. As we embark on this journey through the realm of SiC devices, we will ex作者: 領巾 時間: 2025-3-24 23:11
Gert-Martin Greuel,Gerhard Pfisteral properties, SiC has revolutionized various industries, spanning electronics, energy, and beyond. This chapter delves into the multifaceted applications of SiC, illuminating its pivotal role in shaping our modern world.作者: 木訥 時間: 2025-3-25 03:20
,On the Risk of a Thucydides’s Trap,res in contemporary semiconductor technology. In our investigation, we will use the LTSpice platform to conduct various simulations, thereby gaining a deeper understanding of the practical applications and implications of these materials.作者: Arresting 時間: 2025-3-25 10:49
Books of the 19th and 20th Centuries,inish our carbon footprint and bolster energy efficiency, particularly within the industrial sector, stands central to our global climate change response. To put it into perspective, a mere 1% elevation in industrial efficiency equates to saving 93.6 TWh of energy, thus averting the emission of 32 m作者: 一小塊 時間: 2025-3-25 11:45 作者: 地殼 時間: 2025-3-25 16:06
https://doi.org/10.1007/978-1-4612-5700-4p, WBG materials are more desirable for power electronics converters due to several factors. This chapter delves into the fascinating world of Wide-Bandgap materials and examines why they have become the darlings of the power electronics community.作者: NAVEN 時間: 2025-3-25 21:42
Gert-Martin Greuel,Gerhard Pfisteral properties, SiC has revolutionized various industries, spanning electronics, energy, and beyond. This chapter delves into the multifaceted applications of SiC, illuminating its pivotal role in shaping our modern world.作者: 排名真古怪 時間: 2025-3-26 02:44
,On the Risk of a Thucydides’s Trap,res in contemporary semiconductor technology. In our investigation, we will use the LTSpice platform to conduct various simulations, thereby gaining a deeper understanding of the practical applications and implications of these materials.作者: 難解 時間: 2025-3-26 06:16 作者: 冰雹 時間: 2025-3-26 11:11
Wide-Bandgap Materials,p, WBG materials are more desirable for power electronics converters due to several factors. This chapter delves into the fascinating world of Wide-Bandgap materials and examines why they have become the darlings of the power electronics community.作者: humectant 時間: 2025-3-26 16:40
SiC Applications,al properties, SiC has revolutionized various industries, spanning electronics, energy, and beyond. This chapter delves into the multifaceted applications of SiC, illuminating its pivotal role in shaping our modern world.作者: 聾子 時間: 2025-3-26 17:03
Simulations with Wide Bandgap,res in contemporary semiconductor technology. In our investigation, we will use the LTSpice platform to conduct various simulations, thereby gaining a deeper understanding of the practical applications and implications of these materials.作者: 使閉塞 時間: 2025-3-26 23:12
2690-0300 circuit design with GaN and SiC devices.Explains principles.This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconduc作者: 愉快么 時間: 2025-3-27 04:21
Books of the 19th and 20th Centuries,nse. To put it into perspective, a mere 1% elevation in industrial efficiency equates to saving 93.6 TWh of energy, thus averting the emission of 32 million kilograms of CO., as asserted by the International Energy Agency.作者: ARC 時間: 2025-3-27 08:23 作者: 追逐 時間: 2025-3-27 11:22 作者: 不開心 時間: 2025-3-27 13:50
https://doi.org/10.1007/978-3-642-85476-7coming essential for their robustness and efficiency. Additionally, motor drives equipped with GaN components demonstrate superior performance, with reduced energy losses and increased lifespan. This chapter delves deep into these applications and others, spotlighting GaN‘s transformative role in modern power electronics.作者: 溝通 時間: 2025-3-27 18:59
GaN Applications,coming essential for their robustness and efficiency. Additionally, motor drives equipped with GaN components demonstrate superior performance, with reduced energy losses and increased lifespan. This chapter delves deep into these applications and others, spotlighting GaN‘s transformative role in modern power electronics.作者: 防水 時間: 2025-3-27 22:27
Gert-Martin Greuel,Gerhard Pfisterlutionizing industries, and propelling us toward a sustainable and energy-efficient future. In this chapter, we will delve into the intricate workings of SiC MOSFETs, Schottky Diodes, and Modules, unraveling the remarkable capabilities that make them the cornerstone of the SiC revolution.作者: 中世紀 時間: 2025-3-28 04:12 作者: BOLUS 時間: 2025-3-28 07:39
Silicon Power Devices,tubes of the 1950s, these functions were first performed with silicon bipolar power devices and their advances. Despite having size, control, and protection restrictions, transistor technology was developed to satisfy the ever-increasing need for power density.作者: NAIVE 時間: 2025-3-28 11:13 作者: atopic 時間: 2025-3-28 17:48 作者: collagen 時間: 2025-3-28 21:45
Silicon Carbide Devices,nsformative shift. Silicon Carbide (SiC) devices have emerged as the vanguards of this technological revolution, promising unparalleled efficiency, reduced energy wastage, and compact solutions across a myriad of applications. As we embark on this journey through the realm of SiC devices, we will ex作者: cavity 時間: 2025-3-29 02:24
SiC Applications,al properties, SiC has revolutionized various industries, spanning electronics, energy, and beyond. This chapter delves into the multifaceted applications of SiC, illuminating its pivotal role in shaping our modern world.作者: Malfunction 時間: 2025-3-29 06:33
Simulations with Wide Bandgap,res in contemporary semiconductor technology. In our investigation, we will use the LTSpice platform to conduct various simulations, thereby gaining a deeper understanding of the practical applications and implications of these materials.作者: Etymology 時間: 2025-3-29 07:41 作者: Cervical-Spine 時間: 2025-3-29 12:55 作者: 宏偉 時間: 2025-3-29 18:24 作者: Terminal 時間: 2025-3-29 20:13
Book 2016haffen. Der Zugang zu dieser betrieblichen Gesundheitsarbeit führt künftig über das Wissen darüber, welchen Einfluss der Lebens- und Arbeitsstil auf den physischen und psychischen Zustand haben k?nnen. Die Unterstützung durch die Sozialversicherungen ist ebenfalls an die Beachtung dieser Leitprinzipien gekoppelt..
