標(biāo)題: Titlebook: Epitaxy of Semiconductors; Introduction to Phys Udo W. Pohl Textbook 20131st edition Springer-Verlag Berlin Heidelberg 2013 Crystal Structu [打印本頁(yè)] 作者: Bunion 時(shí)間: 2025-3-21 18:38
書(shū)目名稱Epitaxy of Semiconductors影響因子(影響力)
書(shū)目名稱Epitaxy of Semiconductors影響因子(影響力)學(xué)科排名
書(shū)目名稱Epitaxy of Semiconductors網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Epitaxy of Semiconductors網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Epitaxy of Semiconductors被引頻次
書(shū)目名稱Epitaxy of Semiconductors被引頻次學(xué)科排名
書(shū)目名稱Epitaxy of Semiconductors年度引用
書(shū)目名稱Epitaxy of Semiconductors年度引用學(xué)科排名
書(shū)目名稱Epitaxy of Semiconductors讀者反饋
書(shū)目名稱Epitaxy of Semiconductors讀者反饋學(xué)科排名
作者: Confidential 時(shí)間: 2025-3-22 00:18
Structural Properties of Heterostructures, on perfect, polytype, and mixed bulk crystals we focus on elastic properties of pseudomorphic strained-layer structures. Then the concept of critical layer thickness is introduced, and dislocations relieving the strain in epitaxial layers are presented. X-ray diffraction—the standard tool for struc作者: 使成核 時(shí)間: 2025-3-22 03:53
Electronic Properties of Heterostructures,nsider the valence and conduction bands of zincblende and wurtzite bulk semiconductors and illustrate the effects of strain and alloying. Then, models describing the band lineup of heterostructures are introduced and the effect of interface stoichiometry is illustrated. The characteristic scale for 作者: 空氣 時(shí)間: 2025-3-22 06:46
Thermodynamics of Epitaxial Layer-Growth,ms of macroscopic quantities. We consider a thermodynamic description for the transition of a gaseous or liquid phase to the solid phase. The initial stage of layer growth requires a nucleation process. We discuss the energy of a surface and illustrate the nucleation of a layer and the occurrence of作者: 演繹 時(shí)間: 2025-3-22 10:41 作者: CAMP 時(shí)間: 2025-3-22 16:37 作者: CAMP 時(shí)間: 2025-3-22 17:05 作者: 怕失去錢 時(shí)間: 2025-3-22 21:17 作者: LIKEN 時(shí)間: 2025-3-23 02:08 作者: 鋸齒狀 時(shí)間: 2025-3-23 08:44 作者: 迷住 時(shí)間: 2025-3-23 10:13
https://doi.org/10.1007/978-3-540-72724-8 describing the band lineup of heterostructures are introduced and the effect of interface stoichiometry is illustrated. The characteristic scale for the occurrence of size quantization is discussed, and electronic states in quantum wells, quantum wires, and quantum dots are described.作者: 剝皮 時(shí)間: 2025-3-23 16:00 作者: brassy 時(shí)間: 2025-3-23 19:11
https://doi.org/10.1007/978-3-658-08120-1um-near LPE process is illustrated for different cooling procedures. For the growth employing MOVPE we consider properties of source precursors and processes of mass transport. The section on MBE concentrates particularly on vacuum requirements, the effusion of beam sources, and the uniformity of deposition.作者: comely 時(shí)間: 2025-3-23 22:16
Structural Properties of Heterostructures, layer thickness is introduced, and dislocations relieving the strain in epitaxial layers are presented. X-ray diffraction—the standard tool for structural characterization—is outlined at the end of the chapter.作者: gustation 時(shí)間: 2025-3-24 04:23 作者: Trigger-Point 時(shí)間: 2025-3-24 07:30
Doping, Diffusion, and Contacts,stability of atoms against a change of lattice site. We briefly consider fundamentals of diffusion and discuss some basic mechanisms governing the diffusivity of atoms in a crystal. The chapter concludes with concepts for ohmic metal-semiconductor contacts.作者: blister 時(shí)間: 2025-3-24 13:17 作者: CHIP 時(shí)間: 2025-3-24 15:32
https://doi.org/10.1007/978-3-658-20391-7chieved by technical improvements of the growth techniques, namely liquid phase epitaxy in the early, and molecular beam epitaxy and metalorganic vapor phase epitaxy in the late 1960ies. Current tasks for epitaxial growth are often motivated by needs for the fabrication of advanced devices, aiming to control carriers and photons.作者: COW 時(shí)間: 2025-3-24 20:57
Introduction,chieved by technical improvements of the growth techniques, namely liquid phase epitaxy in the early, and molecular beam epitaxy and metalorganic vapor phase epitaxy in the late 1960ies. Current tasks for epitaxial growth are often motivated by needs for the fabrication of advanced devices, aiming to control carriers and photons.作者: 假設(shè) 時(shí)間: 2025-3-25 01:59
1868-4513 it from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.978-3-642-32970-8Series ISSN 1868-4513 Series E-ISSN 1868-4521 作者: 火光在搖曳 時(shí)間: 2025-3-25 06:55 作者: Nebulous 時(shí)間: 2025-3-25 08:59
Springer-Verlag Berlin Heidelberg 2013作者: Buttress 時(shí)間: 2025-3-25 12:39 作者: 疼死我了 時(shí)間: 2025-3-25 18:05 作者: Diatribe 時(shí)間: 2025-3-25 20:32 作者: AXIS 時(shí)間: 2025-3-26 00:58
Graduate Texts in Physicshttp://image.papertrans.cn/e/image/313368.jpg作者: 整理 時(shí)間: 2025-3-26 07:22 作者: 愛(ài)國(guó)者 時(shí)間: 2025-3-26 11:17
Problemaufriss der Technikethik, on perfect, polytype, and mixed bulk crystals we focus on elastic properties of pseudomorphic strained-layer structures. Then the concept of critical layer thickness is introduced, and dislocations relieving the strain in epitaxial layers are presented. X-ray diffraction—the standard tool for struc作者: 闡釋 時(shí)間: 2025-3-26 16:10 作者: right-atrium 時(shí)間: 2025-3-26 18:03 作者: Lasting 時(shí)間: 2025-3-26 22:39
https://doi.org/10.1007/978-3-7091-7531-6processes, which are characterized by such energy barriers. We consider the ideal and the real structure of a crystal surface, and discuss kinetic steps occurring during nucleation and growth. At the end of the chapter phenomena of self-organization employed for epitaxial growth of nanostructures ar作者: Haphazard 時(shí)間: 2025-3-27 03:40 作者: 表示問(wèn) 時(shí)間: 2025-3-27 08:32 作者: 拒絕 時(shí)間: 2025-3-27 11:07
https://doi.org/10.1007/978-3-322-85368-4ms of macroscopic quantities. We consider a thermodynamic description for the transition of a gaseous or liquid phase to the solid phase. The initial stage of layer growth requires a nucleation process. We discuss the energy of a surface and illustrate the nucleation of a layer and the occurrence of different growth modes.作者: nonsensical 時(shí)間: 2025-3-27 14:59 作者: enhance 時(shí)間: 2025-3-27 21:22 作者: 剝削 時(shí)間: 2025-3-28 01:34 作者: BABY 時(shí)間: 2025-3-28 02:32
