標(biāo)題: Titlebook: Epitaxy of Semiconductors; Physics and Fabricat Udo W. Pohl Textbook 2020Latest edition Springer Nature Switzerland AG 2020 Semiconductor N [打印本頁] 作者: 調(diào)停 時(shí)間: 2025-3-21 17:51
書目名稱Epitaxy of Semiconductors影響因子(影響力)
書目名稱Epitaxy of Semiconductors影響因子(影響力)學(xué)科排名
書目名稱Epitaxy of Semiconductors網(wǎng)絡(luò)公開度
書目名稱Epitaxy of Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Epitaxy of Semiconductors被引頻次
書目名稱Epitaxy of Semiconductors被引頻次學(xué)科排名
書目名稱Epitaxy of Semiconductors年度引用
書目名稱Epitaxy of Semiconductors年度引用學(xué)科排名
書目名稱Epitaxy of Semiconductors讀者反饋
書目名稱Epitaxy of Semiconductors讀者反饋學(xué)科排名
作者: licence 時(shí)間: 2025-3-21 21:07
https://doi.org/10.1007/978-981-16-5297-4defects in organic crystals. Polymers consist of long chain-like molecules packed largely uniformly in lamella of crystalline domains, which are separated by amorphous regions with tangled polymer chains. Crystallinity usually increases with the molecular length, get maximum at a critical molecular 作者: 黃瓜 時(shí)間: 2025-3-22 03:37
https://doi.org/10.1007/978-3-658-01493-3t the interfaces between two organic semiconductors have often weak interaction, yielding a band alignment largely described by matching the vacuum levels. Molecular interaction at interfaces to metals is generally strong, creating surface dipoles and an often observed pinning of the Fermi level.作者: 膽汁 時(shí)間: 2025-3-22 08:04
https://doi.org/10.1007/978-3-658-11233-2es, and the diffracted electron and X-ray beams disclose the surface morphology and reconstructions. Optical probes are widely applied in gaseous growth ambient. The selectivity for the surface may strongly be enhanced by taking advantages of symmetry-related surface properties, and several optical 作者: 施舍 時(shí)間: 2025-3-22 10:24 作者: Anhydrous 時(shí)間: 2025-3-22 16:17 作者: Anhydrous 時(shí)間: 2025-3-22 18:45 作者: 類型 時(shí)間: 2025-3-22 23:36 作者: 勉勵(lì) 時(shí)間: 2025-3-23 05:05
Electronic Properties of Organic Semiconductors,t the interfaces between two organic semiconductors have often weak interaction, yielding a band alignment largely described by matching the vacuum levels. Molecular interaction at interfaces to metals is generally strong, creating surface dipoles and an often observed pinning of the Fermi level.作者: Adenoma 時(shí)間: 2025-3-23 08:30
In Situ Growth Analysis,es, and the diffracted electron and X-ray beams disclose the surface morphology and reconstructions. Optical probes are widely applied in gaseous growth ambient. The selectivity for the surface may strongly be enhanced by taking advantages of symmetry-related surface properties, and several optical 作者: Patrimony 時(shí)間: 2025-3-23 12:42
Application of Surfactants,ses for strain relaxation in the epitaxial layer are found. Similar findings are obtained with compound semiconductors. Both thermodynamic and prevailing kinetic effects account for the experimental observations. Generally accepted models consider a kinetically retarded approach to an equilibrium st作者: SLAY 時(shí)間: 2025-3-23 17:02 作者: fastness 時(shí)間: 2025-3-23 20:09
1868-4513 netics of layer growth and major growth techniques.Contains .The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced el作者: 浮夸 時(shí)間: 2025-3-24 01:54 作者: Ordnance 時(shí)間: 2025-3-24 03:16
Introduction: Twentieth-Century Angelology, describing the band lineup of heterostructures are introduced and the effect of interface stoichiometry is illustrated. The characteristic scale for the occurrence of size quantization is discussed, and electronic states in quantum wells, quantum wires, and quantum dots are described.作者: TOXIC 時(shí)間: 2025-3-24 09:11 作者: angiography 時(shí)間: 2025-3-24 12:20
,Elektrizit?tsleitung in Flüssigkeiten,um-near LPE process is illustrated for different cooling procedures. For the growth employing MOVPE we consider properties of source precursors and processes of mass transport. The section on MBE concentrates particularly on vacuum requirements, the effusion of beam sources, and the uniformity of deposition.作者: 使出神 時(shí)間: 2025-3-24 15:28
Introduction,ieved by technical improvements of the growth techniques, namely liquid phase epitaxy in the early, and molecular beam epitaxy and metalorganic vapor phase epitaxy in the late 1960s. Current tasks for epitaxial growth are often motivated by needs for the fabrication of advanced devices, aiming to control carriers and photons.作者: Alienated 時(shí)間: 2025-3-24 22:26 作者: stroke 時(shí)間: 2025-3-25 01:04 作者: hemorrhage 時(shí)間: 2025-3-25 05:59
Doping, Diffusion, and Contacts,stability of atoms against a change of lattice site. We briefly consider fundamentals of diffusion and discuss some basic mechanisms governing the diffusivity of atoms in a crystal. The chapter concludes with concepts for ohmic metal-semiconductor contacts.作者: DNR215 時(shí)間: 2025-3-25 08:53
Methods of Epitaxy,um-near LPE process is illustrated for different cooling procedures. For the growth employing MOVPE we consider properties of source precursors and processes of mass transport. The section on MBE concentrates particularly on vacuum requirements, the effusion of beam sources, and the uniformity of deposition.作者: Lime石灰 時(shí)間: 2025-3-25 12:55 作者: 符合你規(guī)定 時(shí)間: 2025-3-25 17:00 作者: 單挑 時(shí)間: 2025-3-25 22:41 作者: 出處 時(shí)間: 2025-3-26 02:38
Graduate Texts in Physicshttp://image.papertrans.cn/e/image/313367.jpg作者: 會(huì)議 時(shí)間: 2025-3-26 06:36
Der Operational Code von Angela Merkel,uctures. Starting from early studies of alkali-halide overgrowth in the beginning of the 20th century, basic concepts for lattice match between layer and substrate were developed in the late 1920s, followed by the theory of misfit dislocations introduced about 1950. Major progress in epitaxy was ach作者: 上下連貫 時(shí)間: 2025-3-26 11:09 作者: 有權(quán) 時(shí)間: 2025-3-26 13:22
https://doi.org/10.1007/978-981-16-5297-4ugated π electrons. By contrast only weak intermolecular Van der Waals forces act between neutral nonpolar molecules, yielding usually defective crystals with a low stability. In two-component crystals additional longer-ranging dipole and Coulomb interactions occur. The weak intermolecular bonding f作者: 殺蟲劑 時(shí)間: 2025-3-26 20:24 作者: Irremediable 時(shí)間: 2025-3-26 21:15 作者: amorphous 時(shí)間: 2025-3-27 03:53 作者: 使害羞 時(shí)間: 2025-3-27 08:59 作者: 發(fā)源 時(shí)間: 2025-3-27 12:44 作者: patriot 時(shí)間: 2025-3-27 15:10 作者: 嗎啡 時(shí)間: 2025-3-27 18:39 作者: 狗舍 時(shí)間: 2025-3-27 21:55
,Elektrizit?tsleitung in Flüssigkeiten,ied growth techniques of liquid-phase epitaxy (LPE), metalorganic vapor-phase epitaxy (MOVPE), and molecular-beam epitaxy (MBE). The usually equilibrium-near LPE process is illustrated for different cooling procedures. For the growth employing MOVPE we consider properties of source precursors and pr作者: 飛鏢 時(shí)間: 2025-3-28 05:31
Sascha Wolfer,Jan Oliver Rüdiger popular methods are treated in this chapter. . (SAG), also called . (SAE), is a widely applied technique to grow an epitaxial layer only in selected parts of a substrate; the areas are generally defined by windows cut through a mask layer. Selectivity is achieved best with the equilibrium-near grow作者: BURSA 時(shí)間: 2025-3-28 07:14
https://doi.org/10.1007/978-3-030-43869-2Semiconductor Nanostructures; Materials for Optoelectronics; Semiconductor Heterostructures; Thermodyna作者: 疾馳 時(shí)間: 2025-3-28 12:49 作者: 好色 時(shí)間: 2025-3-28 16:01 作者: 隨意 時(shí)間: 2025-3-28 20:31 作者: 單純 時(shí)間: 2025-3-29 02:27
Atomistic Aspects of Epitaxial Layer-Growth,processes, which are characterized by such energy barriers. We consider the ideal and the real structure of a crystal surface, and discuss kinetic steps occurring during nucleation and growth. At the end of the chapter phenomena of self-organization employed for epitaxial growth of nanostructures are presented.作者: lymphoma 時(shí)間: 2025-3-29 04:34
978-3-030-43871-5Springer Nature Switzerland AG 2020作者: DENT 時(shí)間: 2025-3-29 08:24 作者: avulsion 時(shí)間: 2025-3-29 12:52 作者: 惰性氣體 時(shí)間: 2025-3-29 18:54
Structural Properties of Heterostructures, on perfect, polytype, and mixed bulk crystals we focus on elastic properties of pseudomorphic strained-layer structures. Then the concept of critical layer thickness is introduced, and dislocations relieving the strain in epitaxial layers are presented. X-ray diffraction—the standard tool for struc作者: 遺忘 時(shí)間: 2025-3-29 21:04
Structure of Organic Crystals,ugated π electrons. By contrast only weak intermolecular Van der Waals forces act between neutral nonpolar molecules, yielding usually defective crystals with a low stability. In two-component crystals additional longer-ranging dipole and Coulomb interactions occur. The weak intermolecular bonding f作者: irreducible 時(shí)間: 2025-3-29 23:58 作者: lambaste 時(shí)間: 2025-3-30 06:14
Electronic Properties of Organic Semiconductors,tion bands of their inorganic counterparts. Organic crystals have comparatively narrow bands and large bandgaps, and they feature strong anisotropies. The Gaussian density of states of HOMO and LUMO supplemented by defect states produces a substantial tailing of the bands into the bandgap. The stron
