標(biāo)題: Titlebook: Emerging Trends in Terahertz Solid-State Physics and Devices; Sources, Detectors, Arindam Biswas,Amit Banerjee,Jintendra Nath Roy Book 202 [打印本頁] 作者: FARCE 時間: 2025-3-21 19:17
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書目名稱Emerging Trends in Terahertz Solid-State Physics and Devices影響因子(影響力)學(xué)科排名
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書目名稱Emerging Trends in Terahertz Solid-State Physics and Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Emerging Trends in Terahertz Solid-State Physics and Devices被引頻次
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書目名稱Emerging Trends in Terahertz Solid-State Physics and Devices讀者反饋
書目名稱Emerging Trends in Terahertz Solid-State Physics and Devices讀者反饋學(xué)科排名
作者: HUMID 時間: 2025-3-21 21:16
Calvin H. Hirsch MD,Tricia Woo MDg mid- and far-infrared to Terahertz spectral variety. Every attempt is to follow the effectual radiation and recognition of THz signals. Radiation power along with recognition sensitivity of Terahertz systems is enormously poor contrasted through the millimeter (MM) band and optoelectronic applianc作者: hemorrhage 時間: 2025-3-22 03:31 作者: Expediency 時間: 2025-3-22 06:43 作者: relieve 時間: 2025-3-22 12:00 作者: FILTH 時間: 2025-3-22 14:30
Emerging Trends in Terahertz Solid-State Physics and DevicesSources, Detectors, 作者: FILTH 時間: 2025-3-22 19:35 作者: Offset 時間: 2025-3-22 21:35 作者: Impugn 時間: 2025-3-23 03:01
Heterostructure Devices for THz Signal Recognition,g mid- and far-infrared to Terahertz spectral variety. Every attempt is to follow the effectual radiation and recognition of THz signals. Radiation power along with recognition sensitivity of Terahertz systems is enormously poor contrasted through the millimeter (MM) band and optoelectronic applianc作者: 空氣傳播 時間: 2025-3-23 07:14
Data Transmission with Terahertz Communication Systems,ary phase shift keying (BPSK) are assumed with incoherent and coherent receiver, respectively. When it comes to opting for the appropriate modulation techniques for THz communication system, there is always a compromise to be made between bandwidth efficiency and power efficiency. For that reason, t作者: 滋養(yǎng) 時間: 2025-3-23 10:18 作者: 帽子 時間: 2025-3-23 14:16
,Terahertz Emission Mechanisms in III–V Semiconductors: The Influence of Isoelectronic Dopants, have shown interesting properties like giant bandgap bowing, (e.g., 80–90?meV/% of Bi in GaAsBi), increase in hole concentration, and giant spin-orbit bowing. In this chapter, we discuss the effect of Bi incorporation on the THz emission and the mechanisms responsible for THz phenomena in two typic作者: medium 時間: 2025-3-23 20:56 作者: mechanical 時間: 2025-3-24 01:12
,Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part I: Large-Signal Chond IMPATT source is a better option for RF power generation at 94?GHz due to its better power generation capability at lower mm-wave frequencies. However, IMPATT sources based on both 3C-SiC and diamond are much powerful in comparison with mm-wave and THz IMPATT sources based on Si.作者: Recess 時間: 2025-3-24 03:39
dealing with THz technology.Includes advanced topics such a.This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learni作者: FOLLY 時間: 2025-3-24 10:35
https://doi.org/10.1007/978-3-031-48777-4conductor-based IMPATT sources possess significantly poor noise performance than the conventional Si-based IMPATT sources. However, significantly better RF power delivery capability of WBG IMPATT sources makes them superior than Si IMPATTs for mm-wave and THz applications.作者: maculated 時間: 2025-3-24 11:12 作者: 使增至最大 時間: 2025-3-24 16:34 作者: esoteric 時間: 2025-3-24 19:12 作者: 制造 時間: 2025-3-24 23:40 作者: AER 時間: 2025-3-25 03:28 作者: TSH582 時間: 2025-3-25 11:15
,Potentiality of Impact Avalanche Transit Time Diode as Terahertz Source Based on Group IV and III–V that diode can be designed with suitable material as per the requirement for THz applications. Also DC-to-radio frequency (RF) conversion efficiency for InP, GaAs, Si, Ge and WzGaN is computed through the numerical technique. The efficiency obtained for all the materials are compared at the corresponding THz frequency.作者: 馬具 時間: 2025-3-25 12:16 作者: 美麗的寫 時間: 2025-3-25 16:33
,Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part II: Avalanche Noisconductor-based IMPATT sources possess significantly poor noise performance than the conventional Si-based IMPATT sources. However, significantly better RF power delivery capability of WBG IMPATT sources makes them superior than Si IMPATTs for mm-wave and THz applications.作者: CRAB 時間: 2025-3-25 21:29
Analysis of InN-Based Surrounded Gate Tunnel Field-Effect Transistor for Terahertz Applications,calculations. The tunneling current is evaluated and the effects are analyzed with a change in different device parameters to create the TFET design rule. The cut-off frequency (.) of the device is found to be 0.45?THz which makes it appropriate for high-frequency applications.作者: BUCK 時間: 2025-3-26 04:08
ng and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics..978-981-15-3235-1作者: agonist 時間: 2025-3-26 04:39
Book 2020rn recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and valida作者: figment 時間: 2025-3-26 09:55
Book 2020rn recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics..作者: 騷擾 時間: 2025-3-26 16:06 作者: 承認(rèn) 時間: 2025-3-26 20:00 作者: Optometrist 時間: 2025-3-26 21:02
https://doi.org/10.1007/978-3-031-48777-4miconducting substances like 3C-SiC and type-IIb diamond (C) as millimeter-wave (mm-wave) and terahertz (THz) wave generators; noise characteristics of those sources have been compared with the DDR IMPATTs on the basis of traditional substance, i.e., Si. The simulation studies show that the WBG semi作者: Lamina 時間: 2025-3-27 01:32 作者: Palpate 時間: 2025-3-27 05:34 作者: 先兆 時間: 2025-3-27 12:56
https://doi.org/10.1007/978-3-662-25234-5). The device structure has been simulated and analyzed using TCAD device simulator taking non-local band-to-band tunneling (BTBT) into consideration. We have accounted the fundamental limits of InN tunnel FET devices arising from the basic material properties by numerical simulation and analytical 作者: prodrome 時間: 2025-3-27 17:07
Thomas D. Grant,Damon J. Wischikally?vital?nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside?the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. W作者: 社團(tuán) 時間: 2025-3-27 20:10 作者: Abjure 時間: 2025-3-28 00:31 作者: BOAST 時間: 2025-3-28 04:08
https://doi.org/10.1007/978-3-319-10819-3hy is such an imaging technique which uses subatomic wavelengths, whereas on the other hand radars employ waves with wavelengths of several metres. However, it is seen that in last several years the field of terahertz imaging technology has become an area of interest, due to its various advantages. 作者: visceral-fat 時間: 2025-3-28 06:48 作者: Priapism 時間: 2025-3-28 13:27 作者: OVER 時間: 2025-3-28 16:27
,Group III—Nitrides and Other Semiconductors for Terahertz Detector,Terahertz detector is a type of transducer device which converts the terahertz radiation into the human interpretable signal entity. Basically, terahertz signal refers to the signal staying at a gap between microwave and infrared in electromagnetic radiation spectrum (wavelength range from 1?to 0.01?mm).作者: Corral 時間: 2025-3-28 22:11
Springer Nature Singapore Pte Ltd. 2020作者: 火車車輪 時間: 2025-3-29 01:44 作者: 雇傭兵 時間: 2025-3-29 04:09 作者: catagen 時間: 2025-3-29 10:00
