標題: Titlebook: Embedded Memories for Nano-Scale VLSIs; Kevin Zhang Book 2009 Springer-Verlag US 2009 DRAM.Embedded DRAMs.Embedded Non-Volatile Memory.Mem [打印本頁] 作者: invigorating 時間: 2025-3-21 19:46
書目名稱Embedded Memories for Nano-Scale VLSIs影響因子(影響力)
書目名稱Embedded Memories for Nano-Scale VLSIs影響因子(影響力)學(xué)科排名
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書目名稱Embedded Memories for Nano-Scale VLSIs網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Embedded Memories for Nano-Scale VLSIs被引頻次
書目名稱Embedded Memories for Nano-Scale VLSIs被引頻次學(xué)科排名
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書目名稱Embedded Memories for Nano-Scale VLSIs讀者反饋
書目名稱Embedded Memories for Nano-Scale VLSIs讀者反饋學(xué)科排名
作者: Corporeal 時間: 2025-3-21 22:03 作者: coagulate 時間: 2025-3-22 03:42 作者: Lethargic 時間: 2025-3-22 07:15
Kevin ZhangProvides a comprehensive and in-depth view on the state-of-the-art embedded memory technologies.Gives an overview on the landscape and trend of embedded memory in various VLSI system designs, includin作者: 議程 時間: 2025-3-22 10:52 作者: TIA742 時間: 2025-3-22 14:20 作者: TIA742 時間: 2025-3-22 18:45 作者: Stricture 時間: 2025-3-23 00:48 作者: MEN 時間: 2025-3-23 02:52 作者: 商業(yè)上 時間: 2025-3-23 06:21 作者: Palpitation 時間: 2025-3-23 11:02
ations, then describes how and why embedded flash memory has expanded the functions and applications supported by process, device, and circuit technology evolutions. Embedded-specific flash memory technologies focused on the floating-gate and charge-trapping devices with split-gate and 2Tr cell conc作者: 地殼 時間: 2025-3-23 16:06 作者: biopsy 時間: 2025-3-23 19:43
Introduction to Nonlinear Viscoelasticity,ates for stored data. The basic idea behind FeRAM appeared in 1963 [1] and 1988 [2], however, there have been many scientific and technical improvements needed to convert FeRAM technology into manufactured devices and still further improvements in materials, process fabrication, and circuit architec作者: MAL 時間: 2025-3-24 00:28
Music and Science: Tribute to Rolf Hagedorn This problem is particularly crippling for . (HRCs) – circuits like SRAM cells, nonvolatile memory cells, and other memory cells that are replicated millions of times on the same chip – because of aggressive cell design, the requirement of meeting very high >5σ levels of yield and the usual higher 作者: Suppository 時間: 2025-3-24 02:54 作者: violate 時間: 2025-3-24 07:14 作者: allergen 時間: 2025-3-24 11:38
Book 2009perior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf?cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging ap作者: 用手捏 時間: 2025-3-24 16:26
Embedded SRAM Design in Nanometer-Scale Technologies,s the transistor threshold voltage mismatching becomes significant. This also makes it more difficult to scale the operating voltage (..) while keeping the compatibility with logic’s. This chapter intends to provide an overview on the state-of-the-art SRAM circuit design technologies to address the 作者: 全能 時間: 2025-3-24 20:04 作者: Frenetic 時間: 2025-3-25 00:00
1558-9412 caling continues, SRAM design is facing severe challenge in mainta- ing suf?cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging ap978-1-4419-4694-2978-0-387-88497-4Series ISSN 1558-9412 Series E-ISSN 1558-9420 作者: notion 時間: 2025-3-25 03:29
Introduction,as shown in Fig. 1.1, including high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many differ作者: accrete 時間: 2025-3-25 11:34
Embedded Memory Architecture for Low-Power Application Processor,MHz [.–.]. In decades, along with advances in processor technology, the speed gap between processors and memories has become intolerably large [.], and this speed gap has driven the processor designers to introduce a memory hierarchy into the processor architecture. For processors, it is ideal to ha作者: Anguish 時間: 2025-3-25 12:13
Embedded SRAM Design in Nanometer-Scale Technologies,d to enhance the performances of high speed, high density, low power, low voltage, low cost, time to market. Embedded SRAM has had a long reign in upper memory hierarchy than any other memories such as dynamic random access memory (DRAM). This is largely because SRAM is able to provide the highest r作者: AGGER 時間: 2025-3-25 19:54
Ultra Low Voltage SRAM Design,easing number of applications. Hence, highly energy-constrained systems, where performance requirements are secondary, benefit greatly from SRAMs that provide read and write functionality at the lowest possible voltage, particularly down to 0.3?V. However, conventional bit-cells and architectures, d作者: 羞辱 時間: 2025-3-25 22:53 作者: browbeat 時間: 2025-3-26 03:46 作者: 遣返回國 時間: 2025-3-26 07:01
Embedded Magnetic RAM,an introduction of the history and basic principles of MRAM, we look into MRAM technology and basic design as well as on various memory cell architectures in Section 7.1. Then overviews on representative MRAM design examples, possible applications, and future challenges of MRAM are provided in Secti作者: Accede 時間: 2025-3-26 11:41 作者: deforestation 時間: 2025-3-26 13:58 作者: SPER 時間: 2025-3-26 20:18 作者: 無政府主義者 時間: 2025-3-26 22:42
Liquidit?tsregulierung: LCR, NSFR und AMMeriodic refresh. Because of this refresh requirement, this memory type is classified as dynamic, in contrast to static random access memory (Fig. 5.1a) where a cross-coupled pair maintains the data state.作者: 帶傷害 時間: 2025-3-27 02:55 作者: 隱士 時間: 2025-3-27 05:36 作者: 成份 時間: 2025-3-27 10:03
Embedded Memory Architecture for Low-Power Application Processor, on-chip L1 caches are able to operate as fast as the state-of-the-art processor cores but have at most few kilobytes capacity. On the other hand, off-chip DRAMs are capable of storing few gigabytes though their operation frequencies are just around hundreds of megahertz.作者: 600 時間: 2025-3-27 14:47 作者: 破裂 時間: 2025-3-27 21:35 作者: Vldl379 時間: 2025-3-27 22:18 作者: fidelity 時間: 2025-3-28 04:47 作者: 油氈 時間: 2025-3-28 06:27
epts are overviewed in Section 6.2. Descriptions on basic embedded flash design concepts and examples of actual embedded flash designs along with challenges and future targets for embedded flash memory are provided in Section 6.3.作者: 我怕被刺穿 時間: 2025-3-28 11:09
https://doi.org/10.1007/978-1-4615-9738-4on 7.2. Finally nonvolatile memory frontiers and challenges are discussed in Section 7.3 as a conclusion of Chapters 6 and 7. The focus of this chapter is to highlight and summarize important concepts of the new technology.作者: Barter 時間: 2025-3-28 14:55 作者: 休息 時間: 2025-3-28 20:07
Introduction,ent system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have also become increasingly more complex, ranging from static to dynamic and volatile to nonvolatile.作者: Mri485 時間: 2025-3-29 00:05
Embedded Flash Memory,epts are overviewed in Section 6.2. Descriptions on basic embedded flash design concepts and examples of actual embedded flash designs along with challenges and future targets for embedded flash memory are provided in Section 6.3.作者: 欺騙手段 時間: 2025-3-29 06:51
