標(biāo)題: Titlebook: Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations; Hideto Hidaka Book 2018 The Editor(s) (if [打印本頁] 作者: BROOD 時(shí)間: 2025-3-21 19:04
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations影響因子(影響力)
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations影響因子(影響力)學(xué)科排名
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations網(wǎng)絡(luò)公開度
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations被引頻次
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations被引頻次學(xué)科排名
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations年度引用
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations年度引用學(xué)科排名
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations讀者反饋
書目名稱Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations讀者反饋學(xué)科排名
作者: Debate 時(shí)間: 2025-3-21 21:46
Overview of Embedded Flash Memory Technology,First, various types of embedded flash-memory cells are briefly overviewed in terms of cell structure, operation principle, and features in terms of characteristics and reliability. Then presented are the basic circuit-design techniques required in embedded flash hard macros under different design c作者: 間接 時(shí)間: 2025-3-22 02:28
Floating-Gate 1Tr-NOR eFlash Memory, The one-transistor cell has been by far the most adopted cell architecture in the world of flash NOR stand-alone memory. As an almost natural consequence, 1Tr-NOR architecture has also been considered the first, and for sure one of the best, solutions in embedded non-volatile memory (NVM) applicati作者: 金哥占卜者 時(shí)間: 2025-3-22 08:13
,Split-Gate Floating Poly SuperFlash? Memory Technology, Design, and Reliability,icrocontrollers and smart cards. The majority of the large microcontroller and smartcard chip-makers and a series of fabless companies are now using some form of a split-gate embedded flash-memory technology because of its advantages in power, performance, and cost compared with traditional EEPROM o作者: Benzodiazepines 時(shí)間: 2025-3-22 09:05
SONOS 1Tr eFlash Memory,y-cell structure, basic cell-operation principles and fabrication process are described. Then basic array architecture and read/program/erase operations are explained with corresponding peripheral circuits. A disturb mode in program and erase operations is also discussed. Finally, advanced circuit t作者: Feigned 時(shí)間: 2025-3-22 16:29 作者: Feigned 時(shí)間: 2025-3-22 17:35 作者: 借喻 時(shí)間: 2025-3-22 22:16 作者: 音樂學(xué)者 時(shí)間: 2025-3-23 03:30 作者: set598 時(shí)間: 2025-3-23 09:27
Integrated Circuits and Systemshttp://image.papertrans.cn/e/image/307896.jpg作者: overhaul 時(shí)間: 2025-3-23 12:38 作者: Euphonious 時(shí)間: 2025-3-23 15:06 作者: 狂亂 時(shí)間: 2025-3-23 20:55 作者: BAIL 時(shí)間: 2025-3-24 01:04
,Blaue Zunge statt roter B?ckchen,icrocontrollers and smart cards. The majority of the large microcontroller and smartcard chip-makers and a series of fabless companies are now using some form of a split-gate embedded flash-memory technology because of its advantages in power, performance, and cost compared with traditional EEPROM o作者: nocturnal 時(shí)間: 2025-3-24 05:06
https://doi.org/10.1007/978-3-322-87060-5y-cell structure, basic cell-operation principles and fabrication process are described. Then basic array architecture and read/program/erase operations are explained with corresponding peripheral circuits. A disturb mode in program and erase operations is also discussed. Finally, advanced circuit t作者: 盡管 時(shí)間: 2025-3-24 08:32
Fall 44 – Ansichten des PJlers Murrrication process are introduced. Subsequently, basic array architecture and read/program/erase operations are explained by block/schematic diagrams of corresponding peripheral circuits. A data-retention model of the SONOS split-gate eFlash memory is also discussed. Finally, advanced-circuit and proc作者: osculate 時(shí)間: 2025-3-24 14:24 作者: CODE 時(shí)間: 2025-3-24 16:54 作者: bleach 時(shí)間: 2025-3-24 19:54 作者: 殘酷的地方 時(shí)間: 2025-3-24 23:27 作者: Overstate 時(shí)間: 2025-3-25 03:58 作者: Glucose 時(shí)間: 2025-3-25 11:06 作者: VOK 時(shí)間: 2025-3-25 13:36 作者: 鳴叫 時(shí)間: 2025-3-25 18:05 作者: Badger 時(shí)間: 2025-3-25 20:25 作者: licence 時(shí)間: 2025-3-26 02:28
Mehr Erfolg im Technischen Vertriebonstraints from stand-alone flash memories. In addition, system-level design, which plays important roles for function enhancement to meet a wide range of requirements, is also covered. Finally, future prospects of eFlash-memory technologies are briefly summarized.作者: AVOW 時(shí)間: 2025-3-26 06:40 作者: 有其法作用 時(shí)間: 2025-3-26 10:39 作者: Incisor 時(shí)間: 2025-3-26 12:53
1558-9412 es comprehensive and detailed descriptions of current main-s.This book provides a comprehensive introduction to embedded flash memory, describing the history, current status, and future projections for technology, circuits, and systems applications. The authors describe current main-stream embedded 作者: 變態(tài) 時(shí)間: 2025-3-26 20:34
https://doi.org/10.1007/978-3-322-87060-5ns are explained with corresponding peripheral circuits. A disturb mode in program and erase operations is also discussed. Finally, advanced circuit techniques to expand application range, especially for automotive use with high reliability and low energy consumption are described.作者: FLAX 時(shí)間: 2025-3-26 22:06
,Blaue Zunge statt roter B?ckchen,sh. memory technology as an example to demonstrate the benefits of a split-gate embedded flash-memory technologies. The fundamentals of SuperFlash technology, design, reliability, and scalability are discussed in detail in various sections, which would provide a detailed understanding of a split-gate, embedded flash-memory technology.作者: Fluctuate 時(shí)間: 2025-3-27 02:26
Fall 44 – Ansichten des PJlers Murrres both high performance and high reliability are described. Regarding process technology, the scalability of SONOS split-gate eFlash memory is explained placing emphasis on the measurement data for affinity with advanced-logic CMOS process.作者: endure 時(shí)間: 2025-3-27 08:03
,Split-Gate Floating Poly SuperFlash? Memory Technology, Design, and Reliability,sh. memory technology as an example to demonstrate the benefits of a split-gate embedded flash-memory technologies. The fundamentals of SuperFlash technology, design, reliability, and scalability are discussed in detail in various sections, which would provide a detailed understanding of a split-gate, embedded flash-memory technology.作者: Inertia 時(shí)間: 2025-3-27 13:32 作者: hemoglobin 時(shí)間: 2025-3-27 17:26
Book 2015The history of international thought is a flourishing field, but it has tended to focus on Anglo-American realist and liberal thinkers. This book moves beyond the Anglosphere and beyond realism and liberalism. It analyses the work of thinkers from continental Europe and Asia with radical and reactionary agendas quite different from the mainstream.作者: antidepressant 時(shí)間: 2025-3-27 19:43
https://doi.org/10.1007/978-1-4612-4766-1behavior; brain; neurobiology; psychology
