標(biāo)題: Titlebook: Electronic Materials; From Silicon to Orga L. S. Miller,J. B. Mullin Book 1991 Springer Science+Business Media New York 1991 electronic mat [打印本頁] 作者: 清楚明確 時(shí)間: 2025-3-21 17:31
書目名稱Electronic Materials影響因子(影響力)
書目名稱Electronic Materials影響因子(影響力)學(xué)科排名
書目名稱Electronic Materials網(wǎng)絡(luò)公開度
書目名稱Electronic Materials網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Electronic Materials被引頻次
書目名稱Electronic Materials被引頻次學(xué)科排名
書目名稱Electronic Materials年度引用
書目名稱Electronic Materials年度引用學(xué)科排名
書目名稱Electronic Materials讀者反饋
書目名稱Electronic Materials讀者反饋學(xué)科排名
作者: 混亂生活 時(shí)間: 2025-3-21 22:47
Electron Energy Bands,ations of semiconductors is the fact that the electrons involved in the bonding (or in other allowed states) can generally be considered to occupy delocalized states. That is, the electrons cannot be associated with one particular atomic orbital; the electron states extend throughout the whole cryst作者: 格言 時(shí)間: 2025-3-22 01:08 作者: Relinquish 時(shí)間: 2025-3-22 05:09
Interfaces and Low-Dimensional Structures, this is a very good approximation since the dimensions of the materials we work with are generally large compared with the lattice spacing and the defects to the crystal periodicity few enough to be treated as perturbations. One area where these assumptions are not valid, however, is at the boundar作者: 飛鏢 時(shí)間: 2025-3-22 12:45
Key Optoelectronic Devices,ow to utilize more fully the extensive range of properties it offers. Optical fiber communications systems that begin to utilize the enormous bandwidth (10.–10. Hz) of light are now being installed worldwide, the energy of light is being harnessed by fabricating solar cells, and the power of light i作者: 增減字母法 時(shí)間: 2025-3-22 14:45
Thermodynamics and Defect Chemistry of Compound Semiconductors,set for the crystal grower for a number of reasons. Firstly, it enables one to determine the range of experimental conditions under which the required crystalline phase is the thermodynamically most stable phase. Secondly, where the purpose is to grow an alloy crystal (such as a ternary III-V compou作者: 增減字母法 時(shí)間: 2025-3-22 20:43
Single Crystal Growth I: Melt Growth,ometric or nearly so. The production of semiconductors in single-crystal form is a core requirement of almost all semiconductor device technology. As a consequence, the whole field of crystal growth technology is strongly device driven and sensitive to commercial pressures related to production effi作者: 壓艙物 時(shí)間: 2025-3-23 00:16 作者: archetype 時(shí)間: 2025-3-23 03:54
Amorphous Silicon-Electronics into the 21st Century,ductors such as silicon. These developments were possible because the electrical conductivity of crystalline silicon can be controlled over many orders of magnitude by doping, that is, by the addition during growth of the crystal of small concentrations of impurities. However, there are a number of 作者: myopia 時(shí)間: 2025-3-23 07:44 作者: neolith 時(shí)間: 2025-3-23 13:21 作者: Lasting 時(shí)間: 2025-3-23 17:45
Technologies for High-Speed Compound Semiconductor ICs,enges for the process engineer. For analog applications the diversity of frequencies from about 1 GHz to 100 GHz means that a standard technology cannot be adopted for the whole frequency spectrum as the circuit topologies required at each end of this frequency range differ widely. At low frequencie作者: Misgiving 時(shí)間: 2025-3-23 20:48 作者: 跟隨 時(shí)間: 2025-3-24 01:28
Microstructural and Compositional Characterization of Thin-Film Semiconductor Materials by Transmisaterials in thin-film form and of extremely high purity. With advances in the field of metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and metalorganic molecular beam epitaxy (MOMBE) has come the need to characterize materials using methods with higher sensitivities and much 作者: Heresy 時(shí)間: 2025-3-24 04:49
Dielectric Properties and Materials, question, of course, was that opened up by Thales of Milerus around 500 BC, when he is reported to have rubbed some amber with fur and noticed that the amber then attracted particles over small, but finite, distances and that this attractive property decayed in time. Frictional electricity, as it c作者: Finasteride 時(shí)間: 2025-3-24 08:42
Piezoelectric and Pyroelectric Materials and Their Applications,als. Pyroelectricity, the release of charge due to a material’s change of temperature, occurs in all materials that belong to a polar crystal symmetry class. It should be noted that, as not all noncentrosymmetric classes are polar (222, 4, 422, ., 32, 6, 622, ., 23, and . are the nonpolar, noncentro作者: 名字 時(shí)間: 2025-3-24 11:17 作者: dragon 時(shí)間: 2025-3-24 18:47 作者: Clumsy 時(shí)間: 2025-3-24 22:54 作者: obstruct 時(shí)間: 2025-3-25 03:08
Silicon Processing: CMOS Technology, modern production processes have 1-. m minimum feature sizes that permit a million transistors or more to be made in silicon chips of 1 cm.. Although the name CMOS has been retained the gates are no longer made from metal but from polysilicon.作者: Rct393 時(shí)間: 2025-3-25 06:31 作者: 救護(hù)車 時(shí)間: 2025-3-25 10:20 作者: harbinger 時(shí)間: 2025-3-25 15:38
https://doi.org/10.1007/978-3-031-45936-8l background of the subject. Only cursory consideration can be given to these commercial aspects in this chapter. Here we are primarily concerned with the principles and concepts underlying the growth of single crystals from the melt.作者: hidebound 時(shí)間: 2025-3-25 17:12 作者: perpetual 時(shí)間: 2025-3-25 20:21
D. Heuser,N. Freckmann,K. Wiedemannevented any very large-area applications. For example, crystalline silicon solar cells are widely used in space vehicles for converting sunlight into electrical power, but the economics of their production is such that their use here on earth is relatively limited.作者: OPINE 時(shí)間: 2025-3-26 04:06
Schweigepflicht und operativer Eingriffors, capacitors, and resistors are used. It is only at frequencies in excess of 6–7 GHz that fully distributed circuits are small enough to enable utilization of this type of impedance matching. In digital circuits the challenge is in yield improvement, the close spacing of components and signal lines, and the level of integration.作者: 性冷淡 時(shí)間: 2025-3-26 08:07
Thermodynamics and Defect Chemistry of Compound Semiconductors,r rationalizing and understanding dopant segregation behavior, such as the dependence of the dopant segregation coefficient on crystal stoichiometry and on doping level. Fourthly, it provides a framework for understanding native point defect incorporation and nonstoichiometry in compound crystals.作者: Erythropoietin 時(shí)間: 2025-3-26 11:12
Single Crystal Growth I: Melt Growth,l background of the subject. Only cursory consideration can be given to these commercial aspects in this chapter. Here we are primarily concerned with the principles and concepts underlying the growth of single crystals from the melt.作者: Debility 時(shí)間: 2025-3-26 13:58 作者: 能夠支付 時(shí)間: 2025-3-26 20:25
Amorphous Silicon-Electronics into the 21st Century,evented any very large-area applications. For example, crystalline silicon solar cells are widely used in space vehicles for converting sunlight into electrical power, but the economics of their production is such that their use here on earth is relatively limited.作者: 顯示 時(shí)間: 2025-3-27 00:23
Technologies for High-Speed Compound Semiconductor ICs,ors, capacitors, and resistors are used. It is only at frequencies in excess of 6–7 GHz that fully distributed circuits are small enough to enable utilization of this type of impedance matching. In digital circuits the challenge is in yield improvement, the close spacing of components and signal lines, and the level of integration.作者: 離開就切除 時(shí)間: 2025-3-27 02:59
Structures of and Bonding in Electronic Materials,rnate in the structure so that each atom is coordinated tetrahedrally by four of the opposite type; this leads to the zinc blende structure type, which is normally observed provided that the bond type is predominantly covalent.作者: 符合國情 時(shí)間: 2025-3-27 09:18 作者: NAG 時(shí)間: 2025-3-27 10:03
Key Optoelectronic Devices,h (10.–10. Hz) of light are now being installed worldwide, the energy of light is being harnessed by fabricating solar cells, and the power of light is concentrated in lasers for use in cutting, welding, medicine, and a host of other applications. In addition light is used in a multitude of forms for display, indicator, and control purposes.作者: CLAN 時(shí)間: 2025-3-27 13:51 作者: monochromatic 時(shí)間: 2025-3-27 20:44 作者: Influx 時(shí)間: 2025-3-27 22:32 作者: 分開 時(shí)間: 2025-3-28 03:07 作者: Analogy 時(shí)間: 2025-3-28 08:22 作者: cajole 時(shí)間: 2025-3-28 11:33
Indigenous Youth in Brazilian Amazoniah (10.–10. Hz) of light are now being installed worldwide, the energy of light is being harnessed by fabricating solar cells, and the power of light is concentrated in lasers for use in cutting, welding, medicine, and a host of other applications. In addition light is used in a multitude of forms for display, indicator, and control purposes.作者: accomplishment 時(shí)間: 2025-3-28 17:49
Schilddrüse und Nebenschilddrüsed observations of natural phosphorescence was that by Cellini in diamond in 1568, while the Bolognan cobbler, Vincenzo Cascariolo, who was an exponent of alchemy, synthesized in 1604 the first artificial phosphor by calcining sulfur-rich barium sulfate to give it a golden appearance in daylight.作者: somnambulism 時(shí)間: 2025-3-28 19:27
Control of Semiconductor Conductivity by Doping,al, often by imposing small deviations from stoichiometry. The latter process, although analogous to doping, is not doping in the original sense. The available methods for obtaining conductivity control are listed below along with some introductory references to each of the subject areas:作者: arcane 時(shí)間: 2025-3-29 02:44
Agustín Espinosa,Erika Janos,Martín Mac KayThis chapter provides a basis for a general understanding of some of the basic electrical properties of semiconductors such as conductivity and mobility. It is not intended to be a comprehensive survey.作者: right-atrium 時(shí)間: 2025-3-29 06:32
Bina Sengar,Shaikh Feroz IliyasThis chapter describes the basic operating principles of the key semiconductor devices that lie at the heart of modern electronics.作者: 放氣 時(shí)間: 2025-3-29 10:39
Indirekte 24-Stunden BlutdruckmessungIt is 50 years since the first “xerographic” copy was produced by Chester Carlson (October, 1938) in Astoria, New York. Since that time, there have developed several different generic types of xerographic photoreceptors, but all have employed the same empirical process of electrophotography.作者: colony 時(shí)間: 2025-3-29 12:02 作者: Feckless 時(shí)間: 2025-3-29 18:11
Key Electrical Devices,This chapter describes the basic operating principles of the key semiconductor devices that lie at the heart of modern electronics.作者: gonioscopy 時(shí)間: 2025-3-29 22:51 作者: 健談的人 時(shí)間: 2025-3-30 00:13
https://doi.org/10.1007/978-3-319-25035-9and the bond type is covalent since all atoms are the same and hence have identical electronegativities. In the III-V and II-VI systems the atoms alternate in the structure so that each atom is coordinated tetrahedrally by four of the opposite type; this leads to the zinc blende structure type, whic作者: delegate 時(shí)間: 2025-3-30 04:23 作者: 制度 時(shí)間: 2025-3-30 08:36 作者: NIL 時(shí)間: 2025-3-30 13:49 作者: Criteria 時(shí)間: 2025-3-30 20:35 作者: 擁護(hù)者 時(shí)間: 2025-3-30 21:19
Abdel-Samad M. Ali,Chedli B. Chattiset for the crystal grower for a number of reasons. Firstly, it enables one to determine the range of experimental conditions under which the required crystalline phase is the thermodynamically most stable phase. Secondly, where the purpose is to grow an alloy crystal (such as a ternary III-V compou作者: rheumatism 時(shí)間: 2025-3-31 04:22
https://doi.org/10.1007/978-3-031-45936-8ometric or nearly so. The production of semiconductors in single-crystal form is a core requirement of almost all semiconductor device technology. As a consequence, the whole field of crystal growth technology is strongly device driven and sensitive to commercial pressures related to production effi作者: 負(fù)擔(dān) 時(shí)間: 2025-3-31 05:16 作者: prolate 時(shí)間: 2025-3-31 10:17
D. Heuser,N. Freckmann,K. Wiedemannductors such as silicon. These developments were possible because the electrical conductivity of crystalline silicon can be controlled over many orders of magnitude by doping, that is, by the addition during growth of the crystal of small concentrations of impurities. However, there are a number of 作者: 繁殖 時(shí)間: 2025-3-31 14:05
Dauer der Pneumothoraxbehandlung,nto the semiconductor impurity atoms possessing a different number of valency electrons from those of the component elements of the semiconductor. In the case of compound semiconductors, an alternative procedure to control the carrier concentration is to introduce appropriate defects into the materi作者: HEPA-filter 時(shí)間: 2025-3-31 18:55 作者: Ferritin 時(shí)間: 2025-3-31 22:49
Schweigepflicht und operativer Eingriffenges for the process engineer. For analog applications the diversity of frequencies from about 1 GHz to 100 GHz means that a standard technology cannot be adopted for the whole frequency spectrum as the circuit topologies required at each end of this frequency range differ widely. At low frequencie作者: LIKEN 時(shí)間: 2025-4-1 04:06 作者: Expurgate 時(shí)間: 2025-4-1 09:07
Schlaglicht: Modelle und Modellbildung,aterials in thin-film form and of extremely high purity. With advances in the field of metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and metalorganic molecular beam epitaxy (MOMBE) has come the need to characterize materials using methods with higher sensitivities and much 作者: PANT 時(shí)間: 2025-4-1 10:25
Arijit Chaudhuri,Tasos C. Christofides question, of course, was that opened up by Thales of Milerus around 500 BC, when he is reported to have rubbed some amber with fur and noticed that the amber then attracted particles over small, but finite, distances and that this attractive property decayed in time. Frictional electricity, as it c作者: 打算 時(shí)間: 2025-4-1 18:04 作者: acrophobia 時(shí)間: 2025-4-1 20:52 作者: 流動(dòng)性 時(shí)間: 2025-4-2 01:41
