標(biāo)題: Titlebook: Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors; Mengqi Fu Book 2018 Springer Nature Singapore Pte L [打印本頁] 作者: Traction 時間: 2025-3-21 18:24
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors影響因子(影響力)
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors影響因子(影響力)學(xué)科排名
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors網(wǎng)絡(luò)公開度
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors被引頻次
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors被引頻次學(xué)科排名
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors年度引用
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors年度引用學(xué)科排名
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors讀者反饋
書目名稱Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors讀者反饋學(xué)科排名
作者: 炸壞 時間: 2025-3-21 22:25
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors作者: 項目 時間: 2025-3-22 01:06
Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires,on concentration at VBG = 0 V than the ZB InAs NWs, these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical properties of the InAs NWs. The good ohmic 作者: 取之不竭 時間: 2025-3-22 07:10 作者: Between 時間: 2025-3-22 09:30
2190-5053 Ts they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and pro978-981-13-3444-3Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: defeatist 時間: 2025-3-22 13:59 作者: defeatist 時間: 2025-3-22 17:10 作者: 輕彈 時間: 2025-3-22 22:00
Springer Nature Singapore Pte Ltd. 2018作者: 飾帶 時間: 2025-3-23 02:23
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors978-981-13-3444-3Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: Optimum 時間: 2025-3-23 08:41
Kapitel IV: Eine Rekonstruktion der Scharia,In this chapter, our researches of the influence of the size, the crystal structure and the growth method on electrical properties of InAs nanowires are summarized. Also, the further researches on nanowire-based devices are forecasted.作者: 歪曲道理 時間: 2025-3-23 10:50 作者: Admonish 時間: 2025-3-23 15:05 作者: Congruous 時間: 2025-3-23 19:50
,Fabrication, Characterization and Parameter?Extraction of InAs Nanowire-Based Device,ive as introduction on the growth method, fabrication techniques, characterization methods of materials and devices, measurement systems, and way to extract the electrical parameters of InAs nanowires FET devices.作者: 假裝是我 時間: 2025-3-23 23:05 作者: 廚房里面 時間: 2025-3-24 04:57 作者: corn732 時間: 2025-3-24 06:34
Ein- und Zwei-Stichprobentests,an 10 nm could be needed in field-effect transistors (FETs) as the channel length scales down to tens of nanometers to improve the performance and increase the integration. In this chapter, we report FETs based on ultrathin wurtzite-structured InAs NWs, with the smallest NW diameter being 7.2 nm. Th作者: Humble 時間: 2025-3-24 10:41 作者: incision 時間: 2025-3-24 18:55
Die innere Struktur des sozialen Verbandes, growth systems, MBE and MOCVD. Bases on the statistical data of more than 70 InAs nanowires back-gated FETs whose diameter range from 16 nm to more than 100 nm, we find that when the diameter of InAs nanowires is relatively small, most of the MOCVD-grown InAs nanowires have similar electron mobilit作者: catagen 時間: 2025-3-24 20:00 作者: patriot 時間: 2025-3-24 23:59 作者: DIS 時間: 2025-3-25 06:40
Springer Theseshttp://image.papertrans.cn/e/image/305752.jpg作者: crease 時間: 2025-3-25 08:15 作者: 打火石 時間: 2025-3-25 13:57
,Fabrication, Characterization and Parameter?Extraction of InAs Nanowire-Based Device,ive as introduction on the growth method, fabrication techniques, characterization methods of materials and devices, measurement systems, and way to extract the electrical parameters of InAs nanowires FET devices.作者: Interferons 時間: 2025-3-25 19:20 作者: Arroyo 時間: 2025-3-25 22:08
Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires,wires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs N作者: 材料等 時間: 2025-3-26 00:14 作者: 粗魯性質(zhì) 時間: 2025-3-26 07:03 作者: observatory 時間: 2025-3-26 12:28
Grundlegende Operationen der Farbenchemiee of the most promising candidate. In this chapter, we introduce the advantages of InAs nanowire on electronic devices and the development status of InAs nanowire electronic devices. Also, the topic ideas and chapter arrangements of this thesis are presented.作者: 名次后綴 時間: 2025-3-26 14:06 作者: 瘙癢 時間: 2025-3-26 18:42
Introduction,e of the most promising candidate. In this chapter, we introduce the advantages of InAs nanowire on electronic devices and the development status of InAs nanowire electronic devices. Also, the topic ideas and chapter arrangements of this thesis are presented.作者: Ebct207 時間: 2025-3-26 22:58 作者: Plaque 時間: 2025-3-27 02:58
2190-5053 -crystalline wurtzite ultrathin InAs nanowires with diameter.This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high作者: 露天歷史劇 時間: 2025-3-27 09:12
Chris Pitt terror’, international society and free speech under Tony Blair and David Cameron, and the relationships between economic migration, social justice and the common good. The book will appeal particularly to students and scholars interested in British politics, internationalism and political theory..978-3-319-81276-2978-3-319-32404-3作者: 占卜者 時間: 2025-3-27 09:38 作者: 內(nèi)行 時間: 2025-3-27 17:39 作者: 聯(lián)想 時間: 2025-3-27 20:24
