標(biāo)題: Titlebook: Dry Etching for VLSI; A. J. Roosmalen,J. A. G. Baggerman,S. J. H. Brader Book 1991 Springer Science+Business Media New York 1991 Plasma.VL [打印本頁] 作者: PEL 時間: 2025-3-21 18:51
書目名稱Dry Etching for VLSI影響因子(影響力)
書目名稱Dry Etching for VLSI影響因子(影響力)學(xué)科排名
書目名稱Dry Etching for VLSI網(wǎng)絡(luò)公開度
書目名稱Dry Etching for VLSI網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Dry Etching for VLSI被引頻次
書目名稱Dry Etching for VLSI被引頻次學(xué)科排名
書目名稱Dry Etching for VLSI年度引用
書目名稱Dry Etching for VLSI年度引用學(xué)科排名
書目名稱Dry Etching for VLSI讀者反饋
書目名稱Dry Etching for VLSI讀者反饋學(xué)科排名
作者: 鳴叫 時間: 2025-3-21 20:57 作者: 高調(diào) 時間: 2025-3-22 02:40 作者: constitutional 時間: 2025-3-22 07:55
https://doi.org/10.1007/978-3-030-36766-4ng. In fact, certain diagnostic methods are a prerequisite for precise control of etching processes. Over the years a large number of techniques have been developed; these usually require some in situ “sensor” to measure the etch rates or to detect the endpoint when a film has been etched through to expose the underlying material.作者: 夾死提手勢 時間: 2025-3-22 10:45 作者: creditor 時間: 2025-3-22 14:59 作者: creditor 時間: 2025-3-22 18:56 作者: 不確定 時間: 2025-3-22 23:15 作者: Hyperalgesia 時間: 2025-3-23 02:54
The Plasma State,remely low, namely about 10. at room temperature. Not much, but it is there, and room-temperature air is certainly not a plasma. A useful definition for the plasma state has been postulated by Chen [23],作者: MEN 時間: 2025-3-23 07:08 作者: Institution 時間: 2025-3-23 12:52
Reactor Technology,-called barrel reactors have external electrodes, and are suitable for non-directional etching only. Recent additions to the family of dry etchers use magnetic fields to improve system performance, or have special electrode designs.作者: Ringworm 時間: 2025-3-23 15:44
Book 1991 insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referenc作者: Locale 時間: 2025-3-23 20:14 作者: 正面 時間: 2025-3-24 00:41 作者: floaters 時間: 2025-3-24 03:07
https://doi.org/10.1007/978-3-030-36766-4-called barrel reactors have external electrodes, and are suitable for non-directional etching only. Recent additions to the family of dry etchers use magnetic fields to improve system performance, or have special electrode designs.作者: lethal 時間: 2025-3-24 09:44
Introduction,atterns were transferred mostly by means of hard contact exposure of a photoresist. After developing the resist pattern, the wafers were immersed in some aggressive liquid to remove the material not covered by resist. Since wet chemical etching is in principle isotropic, the pattern etched is wider 作者: 偏見 時間: 2025-3-24 14:02 作者: hankering 時間: 2025-3-24 18:45 作者: 步兵 時間: 2025-3-24 21:38
Gas and Surface Processes,d, ground-state, excited and fragmented particles. These species are generated mostly by collision processes between electrons and the neutral gas. Electrons have a dominant role, as they are by far the “hottest” particles in a cold plasma.作者: 充滿裝飾 時間: 2025-3-25 00:21
Reactor Technology,urroundings. The hardware to produce such discharges will be dealt with in this chapter. A large variety of reactors is in use. The frequency of operation of dry etch systems which are or have been available commercially ranges from 50 kHz in the LF band to 50 GHz in the MW band, but HF, more specif作者: Orgasm 時間: 2025-3-25 04:57 作者: REP 時間: 2025-3-25 09:34
Updates in Applied Physics and Electrical Technologyhttp://image.papertrans.cn/e/image/283256.jpg作者: 共和國 時間: 2025-3-25 13:53 作者: 要塞 時間: 2025-3-25 17:47 作者: 大看臺 時間: 2025-3-25 20:21 作者: octogenarian 時間: 2025-3-26 00:50
Etch Processes,Dry etching was defined in chapter 1 as the removal of material by interaction with glow discharges. Of all the species produced in the discharge, two classes have special importance for etching.作者: CRAB 時間: 2025-3-26 04:46
Gas and Surface Processes,d, ground-state, excited and fragmented particles. These species are generated mostly by collision processes between electrons and the neutral gas. Electrons have a dominant role, as they are by far the “hottest” particles in a cold plasma.作者: 錯 時間: 2025-3-26 08:33
Giuseppe Rossi,Marcello Benediniatterns were transferred mostly by means of hard contact exposure of a photoresist. After developing the resist pattern, the wafers were immersed in some aggressive liquid to remove the material not covered by resist. Since wet chemical etching is in principle isotropic, the pattern etched is wider 作者: jealousy 時間: 2025-3-26 16:11
Institutional Framework of Water Governance be considered as the fourth state of existence, together with solid, liquid and gas. It is a considerably less exclusive medium than one might think. On earth, it can be seen in lightning bolts and the Polar Lights; on a galactic scale, it is found in stars and much of the interstellar hydrogen. So作者: 確定無疑 時間: 2025-3-26 18:56 作者: 思考而得 時間: 2025-3-26 20:57 作者: Defense 時間: 2025-3-27 03:42 作者: Judicious 時間: 2025-3-27 06:28 作者: Cumulus 時間: 2025-3-27 12:10 作者: SPER 時間: 2025-3-27 15:44 作者: 極肥胖 時間: 2025-3-27 20:15
Anna Gavanas,Fiona Williamsp?dagogischer Interventionsformen, z.B. die Entwicklung neuer Konzepte zur Zusammenarbeit von Eltern und Erzieherinnen, die Neugestaltung der Essens- und Ruhesituation, der Raumnutzung und -gestaltung, der ?ffnung gegenüber dem Gemeinwesen. Die Projektgruppe untersuchte durch teilnehmende Beobachtun作者: 掙扎 時間: 2025-3-27 22:26
Dena Shottenkirkxisting chapters. Together, the chapters reveal a remarkable landscape of theory and practice, and how System Dynamics can contribute criticalpolicy insights to a broad audience of students and professionals across many fields of study. ?.978-1-4939-8790-0Series ISSN 2629-2327 Series E-ISSN 2629-2343 作者: 集聚成團(tuán) 時間: 2025-3-28 04:50 作者: Prosaic 時間: 2025-3-28 09:01 作者: hemorrhage 時間: 2025-3-28 11:13
