標(biāo)題: Titlebook: Design of System on a Chip; Devices & Components Ricardo Reis,Jochen A. G. Jess Book 2004 Springer Science+Business Media New York 2004 Tra [打印本頁] 作者: firearm 時(shí)間: 2025-3-21 19:32
書目名稱Design of System on a Chip影響因子(影響力)
書目名稱Design of System on a Chip影響因子(影響力)學(xué)科排名
書目名稱Design of System on a Chip網(wǎng)絡(luò)公開度
書目名稱Design of System on a Chip網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Design of System on a Chip被引頻次
書目名稱Design of System on a Chip被引頻次學(xué)科排名
書目名稱Design of System on a Chip年度引用
書目名稱Design of System on a Chip年度引用學(xué)科排名
書目名稱Design of System on a Chip讀者反饋
書目名稱Design of System on a Chip讀者反饋學(xué)科排名
作者: evasive 時(shí)間: 2025-3-21 20:44
BJT Modeling with VBIC,ies. This tutorial reviews the VBIC model, and highlights its main features: improved Early effect modeling, parasitic substrate transistor modeling, quasi-saturation modeling, improved temperature modeling, impact ionization modeling, and electrothermal modeling.作者: Acupressure 時(shí)間: 2025-3-22 04:08
A MOS Transistor Model for Mixed Analog-digital Circuit Design and Simulation, and the designer. Effective circuit design, particularly in the context of analog and mixed analog-digital circuits using silicon CMOS technology, requires a MOS transistor (MOST) circuit simulation model well adapted both to the technology and to the designer’s needs. The MOST model itself should 作者: myelography 時(shí)間: 2025-3-22 05:35 作者: milligram 時(shí)間: 2025-3-22 09:21 作者: 牛馬之尿 時(shí)間: 2025-3-22 15:31 作者: 牛馬之尿 時(shí)間: 2025-3-22 18:43 作者: Ingratiate 時(shí)間: 2025-3-22 21:32 作者: 鍍金 時(shí)間: 2025-3-23 05:21
Microelectronics toward 2010,red to hold good for 10–15 years more, many of the current technologies are foreseen to face growth limitations and thus undergo innovative changes. Problems and possible breakthroughs are discussed for lithography, transistor size, interconnections and power dissipation as the principal factors of 作者: Admire 時(shí)間: 2025-3-23 08:52 作者: Temporal-Lobe 時(shí)間: 2025-3-23 13:46
or technology. The various chapters are the compilations of tutorials presented at workshops in Brazil in the recent years by prominent authors from all over the world. In particular the first book deals with components and circuits. Device models have to satisfy the conditions to be computationally作者: Concomitant 時(shí)間: 2025-3-23 15:55 作者: 伙伴 時(shí)間: 2025-3-23 19:03
Véronique Fourault-Cau?t,Jean-Fabien Steckroblems and possible breakthroughs are discussed for lithography, transistor size, interconnections and power dissipation as the principal factors of such limitations. Future directions to expand functionality and performance of integrated circuits are also described.作者: monogamy 時(shí)間: 2025-3-24 01:52
Low-voltage Low-power High-speed I/O Buffers,onsumption. Among popular low-swing low-power solutions, LSI Logic’s low-voltage differential signalling (Hyper-LVDS?) buffers will be covered in more details. The list of I/O’s discussed include: HSTL, GTL/NTL, PCML, PECL, USB and matched-impedance buffers.作者: 思想靈活 時(shí)間: 2025-3-24 05:20
Microelectronics toward 2010,roblems and possible breakthroughs are discussed for lithography, transistor size, interconnections and power dissipation as the principal factors of such limitations. Future directions to expand functionality and performance of integrated circuits are also described.作者: apropos 時(shí)間: 2025-3-24 10:34 作者: Foregery 時(shí)間: 2025-3-24 13:12
From Tsarism to the New Economic Policyions of key device electrical performances, as measured on manufacturing lines. The procedure runs in minutes of am engineering workstation, and guarantees accurate modeling of manufacturing variations.作者: 躲債 時(shí)間: 2025-3-24 15:04 作者: 返老還童 時(shí)間: 2025-3-24 21:31 作者: 性冷淡 時(shí)間: 2025-3-25 01:21 作者: 拖網(wǎng) 時(shí)間: 2025-3-25 06:35
Efficient Statistical Modeling for Circuit Simulation,ions of key device electrical performances, as measured on manufacturing lines. The procedure runs in minutes of am engineering workstation, and guarantees accurate modeling of manufacturing variations.作者: 洞察力 時(shí)間: 2025-3-25 09:20 作者: 難理解 時(shí)間: 2025-3-25 14:03 作者: 圣人 時(shí)間: 2025-3-25 18:50 作者: 襲擊 時(shí)間: 2025-3-25 23:28
Book 2004nents and memories. We wind up with an exposition of the technology problems to be solved if our community wants to maintain the pace of the "International Technology Roadmap for Semiconductors" (ITRS).作者: 能量守恒 時(shí)間: 2025-3-26 03:56
gnal components and memories. We wind up with an exposition of the technology problems to be solved if our community wants to maintain the pace of the "International Technology Roadmap for Semiconductors" (ITRS).978-1-4419-5454-1978-1-4020-7929-0作者: jarring 時(shí)間: 2025-3-26 07:12
From Tsarism to the New Economic Policyl, which is built on fundamental physical properties of the MOS transistor. Among the original concepts used in this model are the normalization of the channel current, and taking the substrate as a reference instead of the source. The basic long-channel model is formulated in symmetric terms of the作者: dithiolethione 時(shí)間: 2025-3-26 08:53
Introduction: From Tsarism to NEP, optimized component aspect ratios and careful floor planning and, finally, reduced routing density and routing area ensured by detailed analysis of route path characteristics and use of simplifying routing techniques. Examples of practical industry designs are given where such methodology has been作者: 欺騙世家 時(shí)間: 2025-3-26 15:14
https://doi.org/10.1007/978-3-031-57016-2ssing or compensating for the design parameter variations and in implementing and standardizing a single power supply. In SRAMs, a boosted power-supply scheme for the cell will eventually become necessary in order to accommodate the cell transistor’s high-VT needed to suppress a huge array subthresh作者: aneurysm 時(shí)間: 2025-3-26 19:12
From Tsarism to the New Economic Policyre’s law triggers a technology shockwave. To curb the entrepreneural risks the professional industry associations decided to anticipate the technology evolution by setting up roadmaps. The ITRS semiconductor roadmap was complemented by other roadmaps that preview the technology shockwave originating作者: Morose 時(shí)間: 2025-3-26 22:33
Introduction: From Tsarism to NEPies. This tutorial reviews the VBIC model, and highlights its main features: improved Early effect modeling, parasitic substrate transistor modeling, quasi-saturation modeling, improved temperature modeling, impact ionization modeling, and electrothermal modeling.作者: Torrid 時(shí)間: 2025-3-27 02:17
From Tsarism to the New Economic Policy and the designer. Effective circuit design, particularly in the context of analog and mixed analog-digital circuits using silicon CMOS technology, requires a MOS transistor (MOST) circuit simulation model well adapted both to the technology and to the designer’s needs. The MOST model itself should 作者: ESO 時(shí)間: 2025-3-27 08:15 作者: 一個(gè)攪動不安 時(shí)間: 2025-3-27 11:02
Introduction: From Tsarism to NEPe product development cycles and improve timely availability to the market. This can be achieved through the type of retargetable analog-digital blocks discussed in this chapter, whereby various functional building blocks, such as data conversion, amplification, and filtering, among other functions,作者: 我要威脅 時(shí)間: 2025-3-27 14:21 作者: Terminal 時(shí)間: 2025-3-27 19:00 作者: jumble 時(shí)間: 2025-3-28 00:03 作者: Afflict 時(shí)間: 2025-3-28 02:17 作者: 斜谷 時(shí)間: 2025-3-28 07:22
