標題: Titlebook: Design and Realization of Novel GaAs Based Laser Concepts; Tim David Germann Book 2012 Springer-Verlag Berlin Heidelberg 2012 GaAs-based N [打印本頁] 作者: 諷刺文章 時間: 2025-3-21 19:46
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書目名稱Design and Realization of Novel GaAs Based Laser Concepts讀者反饋
書目名稱Design and Realization of Novel GaAs Based Laser Concepts讀者反饋學科排名
作者: Interferons 時間: 2025-3-21 21:08
Mohamed El Amine Bekhouche,Kamel Adi ratio was found to be crucial for the long-term stability of QD properties during subsequent QD overgrowth and annealing. Results of MOVPE grown material properties used for device fabrication and limits of possible doping levels are outlined.作者: 針葉類的樹 時間: 2025-3-22 00:36 作者: Substance 時間: 2025-3-22 07:43
Book 2012tion storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. .This thesis demonstrates how key performance characteristics of three com作者: 禁止 時間: 2025-3-22 11:18
MOVPE Processes, ratio was found to be crucial for the long-term stability of QD properties during subsequent QD overgrowth and annealing. Results of MOVPE grown material properties used for device fabrication and limits of possible doping levels are outlined.作者: 放大 時間: 2025-3-22 15:58 作者: 放大 時間: 2025-3-22 17:22
Design and Realization of Novel GaAs Based Laser Concepts作者: 蜈蚣 時間: 2025-3-22 22:22
Semiconductor Laser Concepts, which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (.). forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.作者: 哀求 時間: 2025-3-23 04:16 作者: AMPLE 時間: 2025-3-23 06:56
Edge-Emitting Quantum Dot Lasers,suppression is achieved for long wavelength QDs. Stacks of QD layers emitting at . are grown which show complete wavelength stability upon overgrowth or annealing at 615.C and are used within a laser device.作者: Nonconformist 時間: 2025-3-23 13:20
Electro-Optically Modulated Vertical-Cavity Surface-Emitting Lasers,ization challenges encountered for this . 400 layer dual cavity design. Modeling and measurements reveal existing prototype limitations and predict an intrinsic bandwidth potential of 56 GHz for future devices.作者: 懦夫 時間: 2025-3-23 13:57
Tim David GermannDemonstrates how ingenious nanostructure design enables tailoring of key properties of semiconductor lasers.Includes detailed analysis of the underlying physics.Represents a big step forward for low-c作者: 誘惑 時間: 2025-3-23 18:55
Springer Theseshttp://image.papertrans.cn/d/image/268598.jpg作者: 改變 時間: 2025-3-23 23:39
Daniel Fentham,David Parker,Mark Ryan which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (.). forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.作者: 燈泡 時間: 2025-3-24 03:30 作者: strain 時間: 2025-3-24 08:30 作者: 我說不重要 時間: 2025-3-24 14:32
Methodology III: Empirical Evaluationization challenges encountered for this . 400 layer dual cavity design. Modeling and measurements reveal existing prototype limitations and predict an intrinsic bandwidth potential of 56 GHz for future devices.作者: 細節(jié) 時間: 2025-3-24 15:57 作者: recede 時間: 2025-3-24 19:31 作者: 低位的人或事 時間: 2025-3-25 00:38 作者: 雪崩 時間: 2025-3-25 04:20 作者: catagen 時間: 2025-3-25 09:59 作者: allergy 時間: 2025-3-25 12:31 作者: 過渡時期 時間: 2025-3-25 19:21
High-Power Vertical External-Cavity Surface-Emitting Lasers,For the first time, MOVPE grown VECSELs using SMLs and QDs as active media are realized. Results of VECSELs for 950 nm, 1040 nm, and 1210 nm emission wavelengths are presented. QD VECSELs especially benefit from the very broad QD gain spectrum, enabling almost perfect temperature stability during operation.作者: Substance 時間: 2025-3-25 23:59
Summary and Outlook,Summary and outlook of the doctoral thesis of Tim David Germann showing key achievements and possibilities for future work.作者: 掙扎 時間: 2025-3-26 01:15
Design and Realization of Novel GaAs Based Laser Concepts978-3-642-34079-6Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: 披肩 時間: 2025-3-26 07:39
Daniel Fentham,David Parker,Mark Ryan which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (.). forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.作者: Isolate 時間: 2025-3-26 12:05 作者: Infantry 時間: 2025-3-26 16:14
Methodology III: Empirical Evaluationization challenges encountered for this . 400 layer dual cavity design. Modeling and measurements reveal existing prototype limitations and predict an intrinsic bandwidth potential of 56 GHz for future devices.作者: Accommodation 時間: 2025-3-26 17:04
Semiconductor Laser Concepts, which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (.). forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.作者: 滲透 時間: 2025-3-26 20:59 作者: 抵押貸款 時間: 2025-3-27 04:33 作者: Foreshadow 時間: 2025-3-27 07:08 作者: ASTER 時間: 2025-3-27 10:39 作者: KIN 時間: 2025-3-27 17:22 作者: 歌劇等 時間: 2025-3-27 18:25 作者: 使隔離 時間: 2025-3-28 01:23 作者: Deceit 時間: 2025-3-28 05:42
Michael Naughtonrmal artisanal and small-scale gold mining (ASGM) and on the gold trade that extends through the region. Recent changing global trends in gold investment are stimulating the expansion of both refining and industrial extraction. Here we explore how these trends become articulated in the Ugandan conte作者: filial 時間: 2025-3-28 07:19