標(biāo)題: Titlebook: Defects and Impurities in Silicon Materials; An Introduction to A Yutaka Yoshida,Guido Langouche Book 2015 Springer Japan 2015 Atomistic In [打印本頁(yè)] 作者: Denial 時(shí)間: 2025-3-21 17:43
書(shū)目名稱Defects and Impurities in Silicon Materials影響因子(影響力)
書(shū)目名稱Defects and Impurities in Silicon Materials影響因子(影響力)學(xué)科排名
書(shū)目名稱Defects and Impurities in Silicon Materials網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Defects and Impurities in Silicon Materials網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Defects and Impurities in Silicon Materials被引頻次
書(shū)目名稱Defects and Impurities in Silicon Materials被引頻次學(xué)科排名
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書(shū)目名稱Defects and Impurities in Silicon Materials年度引用學(xué)科排名
書(shū)目名稱Defects and Impurities in Silicon Materials讀者反饋
書(shū)目名稱Defects and Impurities in Silicon Materials讀者反饋學(xué)科排名
作者: 套索 時(shí)間: 2025-3-21 22:28 作者: discord 時(shí)間: 2025-3-22 02:33 作者: 可耕種 時(shí)間: 2025-3-22 08:21 作者: Cardiac 時(shí)間: 2025-3-22 09:20 作者: AMPLE 時(shí)間: 2025-3-22 16:06
Oxygen Precipitation in Silicon,pitates are described from the viewpoint of classical nucleation theory. The initial states of oxygen precipitation as suggested by ab initio calculation are also shown. Results about the impact of intrinsic point defects, doping, and co-doping on oxygen precipitation are presented. The most importa作者: AMPLE 時(shí)間: 2025-3-22 18:27
Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniqharacterization of extended defects in Si. For these purposes, we use a scanning electron microscope (SEM) for electron beam irradiation. The electric current induced at the internal circuit and light emission from the specimen are used for the imaging of EBIC and CL, respectively. Using these techn作者: 世俗 時(shí)間: 2025-3-23 00:58
Nuclear Methods to Study Defects and Impurities in Si Materials,tomic and electronic configuration of this atom. In the field of defects and impurities in semiconductors, the study of their hyperfine interaction can therefore contribute substantially to their identification and characterization. The introduction of radioactive isotopes as impurity atoms allows t作者: AWE 時(shí)間: 2025-3-23 03:44 作者: Obvious 時(shí)間: 2025-3-23 06:22 作者: 有斑點(diǎn) 時(shí)間: 2025-3-23 12:26
Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells,n. The simulation helped to reduce carbon and oxygen impurities by designing a simple crucible cover and to decrease the dislocation multiplication and residual stress by using a slow cooling process. Further quality improvements can be achieved using these solvers to optimize furnace structure and operating conditions at a low cost.作者: 侵略主義 時(shí)間: 2025-3-23 15:42
Book 2015n materials, which havebecome more directly accessible over the past 20 years. Such progress has beenmade possible by newly developed experimental methods, first principle theories,and computer simulation techniques.?.The book is aimed at young researchers, scientists, and technicians in related ind作者: GRUEL 時(shí)間: 2025-3-23 19:21
Diabetes in Children and Adolescentsority carrier lifetime and relate these measurements to the defect concentrations and properties are considered. Optical measurements to study defects are presented including optical absorption, Raman techniques and photoluminescence. The status and limitations of such techniques for qualification of silicon material are discussed.作者: 致詞 時(shí)間: 2025-3-24 01:40 作者: 按時(shí)間順序 時(shí)間: 2025-3-24 05:10
Electrical and Optical Defect Evaluation Techniques for Electronic and Solar Grade Silicon,ority carrier lifetime and relate these measurements to the defect concentrations and properties are considered. Optical measurements to study defects are presented including optical absorption, Raman techniques and photoluminescence. The status and limitations of such techniques for qualification of silicon material are discussed.作者: 模仿 時(shí)間: 2025-3-24 07:46 作者: Ergots 時(shí)間: 2025-3-24 12:40 作者: NOMAD 時(shí)間: 2025-3-24 18:33 作者: 任意 時(shí)間: 2025-3-24 22:34 作者: 同義聯(lián)想法 時(shí)間: 2025-3-25 00:04 作者: 阻礙 時(shí)間: 2025-3-25 03:20 作者: FOIL 時(shí)間: 2025-3-25 10:00 作者: strain 時(shí)間: 2025-3-25 14:43 作者: SLING 時(shí)間: 2025-3-25 19:46 作者: irreparable 時(shí)間: 2025-3-25 21:38
Alexandra Kautzky-Willer,W. Waldh?usld, e.g. the analogy between the chemistry of ions in water as a “substrate” and the “chemistry” of point defects in silicon, the most perfect, purest solid material available. Secondly, the application of these fundamental defect engineering principles will be described for various technology areas.作者: sacrum 時(shí)間: 2025-3-26 02:23 作者: Flu表流動(dòng) 時(shí)間: 2025-3-26 07:47 作者: 哎呦 時(shí)間: 2025-3-26 11:53 作者: 暫時(shí)中止 時(shí)間: 2025-3-26 15:41 作者: 反叛者 時(shí)間: 2025-3-26 19:20
Nuclear Methods to Study Defects and Impurities in Si Materials,e site location of the probe atoms from the channelling behaviour of the particles emitted by these probe nuclei..In the first part of this chapter we will describe the basic principles of these nuclear methods and illustrate them with a few relevant examples..In the second part of this chapter we w作者: Cupidity 時(shí)間: 2025-3-26 23:17 作者: cathartic 時(shí)間: 2025-3-27 03:25
https://doi.org/10.1007/978-4-431-55800-2Atomistic Insights into Defects and Impurities; Atomistic Scale Modeling Techniques; Computer Simulati作者: 就職 時(shí)間: 2025-3-27 06:00
Diabetes bei Kindern und Jugendlichencomplexity of diffusion in Si becomes evident in the shape of self- and foreign-atom diffusion profiles that evolves under specific experimental conditions. Diffusion studies attempt to determine from the diffusion behavior not only the mechanisms of atomic transport but also the type of the point d作者: minion 時(shí)間: 2025-3-27 10:31 作者: Asparagus 時(shí)間: 2025-3-27 14:17
Diabetes in Children and Adolescentss of their effect on free carriers and their recombination- generation behavior. In particular we explore the application of Deep Level Transient Spectroscopy (DLTS) and its many variants to electronic and solar grade silicon. The physics of carrier recombination at deep level defects is presented a作者: OUTRE 時(shí)間: 2025-3-27 18:09
Stephan Siebel,Pamela Hu,Rachel Perryrface of a growing crystal. For .?>?.., the crystal is vacancy-rich and can contain large vacancy clusters that are detrimental for gate oxide performance and for thin film epitaxial growth. For .?
作者: palpitate 時(shí)間: 2025-3-27 23:02 作者: Aprope 時(shí)間: 2025-3-28 05:38
https://doi.org/10.1007/978-3-662-06578-5pitates are described from the viewpoint of classical nucleation theory. The initial states of oxygen precipitation as suggested by ab initio calculation are also shown. Results about the impact of intrinsic point defects, doping, and co-doping on oxygen precipitation are presented. The most importa作者: 勉勵(lì) 時(shí)間: 2025-3-28 08:33
Diabetes in Medizin- und Kulturgeschichteharacterization of extended defects in Si. For these purposes, we use a scanning electron microscope (SEM) for electron beam irradiation. The electric current induced at the internal circuit and light emission from the specimen are used for the imaging of EBIC and CL, respectively. Using these techn作者: adhesive 時(shí)間: 2025-3-28 13:24 作者: 聯(lián)邦 時(shí)間: 2025-3-28 14:36 作者: 高原 時(shí)間: 2025-3-28 20:54 作者: CARK 時(shí)間: 2025-3-28 23:58 作者: circuit 時(shí)間: 2025-3-29 05:35 作者: 概觀 時(shí)間: 2025-3-29 09:55
Entwicklungspsychopharmakologiell und Grundlage für die Entwicklung der sozialistischen Deutschen Demokratischen Republik.“ (2)In dieser knappen Formulierung ist das wohl grunds?tzlichste und bedeutungsvollste Essential der gesamten DDR-Politik ausgedrückt — sowohl in seiner historischen als auch in seiner gegenw?rtigen und zukün
