標(biāo)題: Titlebook: Defect Complexes in Semiconductor Structures; Proceedings of the I J. Giber,F. Beleznay,J. László Conference proceedings 1983 Springer-Verl [打印本頁] 作者: Agitated 時(shí)間: 2025-3-21 17:31
書目名稱Defect Complexes in Semiconductor Structures影響因子(影響力)
書目名稱Defect Complexes in Semiconductor Structures影響因子(影響力)學(xué)科排名
書目名稱Defect Complexes in Semiconductor Structures網(wǎng)絡(luò)公開度
書目名稱Defect Complexes in Semiconductor Structures網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Defect Complexes in Semiconductor Structures被引頻次
書目名稱Defect Complexes in Semiconductor Structures被引頻次學(xué)科排名
書目名稱Defect Complexes in Semiconductor Structures年度引用
書目名稱Defect Complexes in Semiconductor Structures年度引用學(xué)科排名
書目名稱Defect Complexes in Semiconductor Structures讀者反饋
書目名稱Defect Complexes in Semiconductor Structures讀者反饋學(xué)科排名
作者: Canyon 時(shí)間: 2025-3-21 21:18 作者: Diverticulitis 時(shí)間: 2025-3-22 03:55 作者: 指數(shù) 時(shí)間: 2025-3-22 05:29
Photoluminescence of defect complexes in silicon,he photoluminescence (PL) technique: (i) Defects incorporating transition metal ions, (ii) defects related with oxygen and carbon doping the silicon and (iii) dislocation induced defects. We shall briefly discuss the state of the art from the PL point of view as well as present new data for all thre作者: 哄騙 時(shí)間: 2025-3-22 10:04 作者: STEER 時(shí)間: 2025-3-22 16:30 作者: STEER 時(shí)間: 2025-3-22 18:03
Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs,ting GaAs for the first time. These oscillations were found at DC electric fields above 500 Vcm., about one order of magnitude below the electric-field threshold for Gunn oscillations. The activation energy of the oscillation frequency was found to be 0.8 eV corresponding to the dominant electron tr作者: Iniquitous 時(shí)間: 2025-3-22 23:56 作者: FLING 時(shí)間: 2025-3-23 05:21 作者: ambivalence 時(shí)間: 2025-3-23 08:03
Montserrat Corbera,Jaume Llibrellows quantitative calculations. The method is particularly powerful for classes of complexes such as aggregates of identical point defects when the electronic structure of the primary point defect is known and for defects in wide-gap materials. lie review results obtained for multivacancies in Si and for several defects in SiO..作者: 手銬 時(shí)間: 2025-3-23 12:19 作者: Constituent 時(shí)間: 2025-3-23 17:45
Theory of defect complexes,llows quantitative calculations. The method is particularly powerful for classes of complexes such as aggregates of identical point defects when the electronic structure of the primary point defect is known and for defects in wide-gap materials. lie review results obtained for multivacancies in Si and for several defects in SiO..作者: glowing 時(shí)間: 2025-3-23 18:08 作者: 褲子 時(shí)間: 2025-3-23 23:13 作者: Liability 時(shí)間: 2025-3-24 04:59
https://doi.org/10.1007/978-81-322-1674-2from the conduction band by the EL2 defect has a configurational barrier of approximately 70 meV. The presence of an electric field enhances this electron capture process which makes possible the migration of slow domains.作者: 不要不誠實(shí) 時(shí)間: 2025-3-24 08:26
,Defect complexes in III–V compounds,wo copper-related levels which may appear in all large bandgap III–V‘s are not two levels of the same defect. At least one of the defects therefore has to be a complex. Studies in series of alloys demonstrate that the copper-related levels have the same defect origin in GaP, InP, GaAs and AlAs.作者: 主動(dòng) 時(shí)間: 2025-3-24 12:07 作者: CBC471 時(shí)間: 2025-3-24 15:47
Dirk Pieter van Donk,Taco van der Vaartor and of the understanding of hydrogen in silicon. As examples of EPR studies as a tool in defect studies the concentration dependence of the phosphorus resonance is described from the regime of isolated defects to the metallic regime. The ENDOR results on defects in silicon are discussed at some l作者: 搬運(yùn)工 時(shí)間: 2025-3-24 19:10 作者: Aerophagia 時(shí)間: 2025-3-24 23:49
Electrical and optical measuring techniques for flaw states,作者: paltry 時(shí)間: 2025-3-25 04:53 作者: BAIL 時(shí)間: 2025-3-25 10:34 作者: unstable-angina 時(shí)間: 2025-3-25 11:41 作者: anticipate 時(shí)間: 2025-3-25 17:04 作者: Yag-Capsulotomy 時(shí)間: 2025-3-25 21:19
Main electron traps in gaas: Aggregates of antisite defects,作者: CRASS 時(shí)間: 2025-3-26 01:13 作者: exhilaration 時(shí)間: 2025-3-26 04:55
Dirk Pieter van Donk,Taco van der Vaartd, Si, Ge, SiC), III-V (AlSb, GaAs, GaSb, GaP, InAs, InP, InSb), II-VI (BaO, BaS, BeO, CaO, CaS, CaSe, CdO, CdS, CdSe, CdTe, MgO, SrO, SrS, ZnC, ZnS, ZnSe, ZnTe) and miscellaneous systems. The identification of defects via EPR is described as is the exploitation of that identification as a tool in f作者: Patrimony 時(shí)間: 2025-3-26 10:42
Montserrat Corbera,Jaume Llibree a simple alternative, which can provide both qualitative and semiempirical quantitative descriptions of the localized states associated with defect complexes. It is similar in spirit with the “defect-molecule” model which has sometimes been used for qualitative work, but is defined in a way that a作者: exigent 時(shí)間: 2025-3-26 15:28 作者: acetylcholine 時(shí)間: 2025-3-26 18:17 作者: 古董 時(shí)間: 2025-3-26 21:04
Developments in Modern Historiographyercome this problem is the application of different kinds of buffer layers between the epitaxial layer and the substrate, and on the other hand, the use of substrates for the epitaxy with nearly the same lattice constant and thermal expansion coefficient. Another important question is the deviation 作者: municipality 時(shí)間: 2025-3-27 01:17
Savita Malhotra,Subho Chakrabartigap donor level in GaAs, often referred to as EL2, is not as previously assumed due to substitutional oxygen on an As site, but is a defect complex involving a Ga vacancy. This defect makes it possible to grow undoped semi-insulating GaAs for the production of integrated circuits. Defect reactions c作者: 課程 時(shí)間: 2025-3-27 07:33
https://doi.org/10.1007/978-81-322-1674-2ting GaAs for the first time. These oscillations were found at DC electric fields above 500 Vcm., about one order of magnitude below the electric-field threshold for Gunn oscillations. The activation energy of the oscillation frequency was found to be 0.8 eV corresponding to the dominant electron tr作者: Fissure 時(shí)間: 2025-3-27 13:14
Interaction Between Colloidal ParticlesThe multiple scattering-Xa molecular cluster model is used to study the A center in silicon. We show that this center can be created by Jahn-Teller effects over substitutional oxygen impurity in the lattice. Our defect model provides a consistent explanation for the EPR experimental results obtained for the Si-A center.作者: 煩擾 時(shí)間: 2025-3-27 13:50 作者: 1FAWN 時(shí)間: 2025-3-27 20:16 作者: largesse 時(shí)間: 2025-3-27 22:29 作者: acrimony 時(shí)間: 2025-3-28 03:33
https://doi.org/10.1007/3-540-11986-8Gitterfehler; Halbleiter; Structures; crystal; crystallographic defect; diffusion; electron; microscopy; sem作者: 不合 時(shí)間: 2025-3-28 07:45 作者: 小木槌 時(shí)間: 2025-3-28 10:51
Photoluminescence of defect complexes in silicon,he photoluminescence (PL) technique: (i) Defects incorporating transition metal ions, (ii) defects related with oxygen and carbon doping the silicon and (iii) dislocation induced defects. We shall briefly discuss the state of the art from the PL point of view as well as present new data for all three kinds of defect complexes.作者: meritorious 時(shí)間: 2025-3-28 14:46 作者: 消滅 時(shí)間: 2025-3-28 20:57
Defect Complexes in Semiconductor Structures978-3-540-39456-3Series ISSN 0075-8450 Series E-ISSN 1616-6361 作者: bronchodilator 時(shí)間: 2025-3-29 00:24 作者: 野蠻 時(shí)間: 2025-3-29 05:27
Dorin ?endrescu,Sihem Tebbani,Dan Seli?teanuhe photoluminescence (PL) technique: (i) Defects incorporating transition metal ions, (ii) defects related with oxygen and carbon doping the silicon and (iii) dislocation induced defects. We shall briefly discuss the state of the art from the PL point of view as well as present new data for all three kinds of defect complexes.作者: Cabg318 時(shí)間: 2025-3-29 11:12
erm?glicht, die erfüllt sein müssen, damit bei synchronem Gleichlauf die Kreiselwirkung die kritischen Drehzahlen verhindere. Sie betrafen durchwegs F?lle mit nur einem belasteten Wellenfeld, dessen Scheiben konstanten Durchmesser besitzen und es ergaben sich dabei Aussagen über das Verh?ltnis der W作者: 聽覺 時(shí)間: 2025-3-29 13:10 作者: 可觸知 時(shí)間: 2025-3-29 15:53 作者: Urea508 時(shí)間: 2025-3-29 23:20 作者: 盡管 時(shí)間: 2025-3-30 03:33
Characteristic Classes of Singularity Theory,, the Thom-Boardman singularities of smooth mappings, Lagrangian and Legendrian singularities, ??-singularities ect. (cf. [P], [R], [L], [HL2], [AGLV], [V]). A classical example is Hopf’s theorem relating the singularities of vector fields to the Euler characteristic.作者: 薄荷醇 時(shí)間: 2025-3-30 06:03 作者: patriarch 時(shí)間: 2025-3-30 11:57 作者: opportune 時(shí)間: 2025-3-30 13:19 作者: 嫌惡 時(shí)間: 2025-3-30 18:39
Research on Evaluation Methodology of Durability of the Plastic Tray System for Battery,les, and we compare the CAE analysis results with the local modal experimental results of the plastic tray system. Finally, the standardized modeling method of the plastic tray system is formed, and the modal target of durability of the plastic tray system for battery is preliminarily determined.作者: amnesia 時(shí)間: 2025-3-30 22:33 作者: crease 時(shí)間: 2025-3-31 04:00 作者: 裂隙 時(shí)間: 2025-3-31 05:43
menh?nge leicht fa?liche Darbietung erreicht. Der Pathophysiologie und damit dem Bezug zur Klinik wird besondere Aufmerksamkeit gewidmet. Ein umfangreiches Sachverzeichnis erm?glicht einen raschen und genauen Zugriff zu jeder gewünschten Information.978-3-662-09340-5作者: epicondylitis 時(shí)間: 2025-3-31 12:10
Introduction,east cancer survivors”: women living with a past history of breast cancer. This number is projected to reach nearly 2 million by 2040. In current breast surgical and oncological practice many of these women will be discharged from routine follow-up. However, these patients will not only continue to 作者: urethritis 時(shí)間: 2025-3-31 17:02
Mathematical Basis of Reliability,The first record of probability can be gone back in sixteenth century to the creation of a guide of gambler by Girolamo Cardano.作者: arrhythmic 時(shí)間: 2025-3-31 18:41
Raphael BeerFormulierung einer Kritischen Theorie auf der Grundlage des Radikalen Konstruktivismus.Zusammenführung von Erkenntnis- und Gesellschaftstheorie.Eingehende Diskussion einschl?giger Wirtschaftstheorien
