標題: Titlebook: Deep Ultraviolet LEDs; Understanding the Lo Zi-Hui Zhang,Chunshuang Chu,Yonghui Zhang Book 2019 The Author(s), under exclusive license to S [打印本頁] 作者: 短暫 時間: 2025-3-21 17:25
書目名稱Deep Ultraviolet LEDs影響因子(影響力)
書目名稱Deep Ultraviolet LEDs影響因子(影響力)學科排名
書目名稱Deep Ultraviolet LEDs網(wǎng)絡(luò)公開度
書目名稱Deep Ultraviolet LEDs網(wǎng)絡(luò)公開度學科排名
書目名稱Deep Ultraviolet LEDs被引頻次
書目名稱Deep Ultraviolet LEDs被引頻次學科排名
書目名稱Deep Ultraviolet LEDs年度引用
書目名稱Deep Ultraviolet LEDs年度引用學科排名
書目名稱Deep Ultraviolet LEDs讀者反饋
書目名稱Deep Ultraviolet LEDs讀者反饋學科排名
作者: Crumple 時間: 2025-3-21 22:38
Development Education in Policy and Practiceayers is the precondition for fabricating high-brightness DUV LEDs. This chapter will review the most adopted technologies for growing high-quality Al-rich AlGaN films, which is regarded as the milestone for making high-efficiency DUV LEDs.作者: 疲憊的老馬 時間: 2025-3-22 00:58
Development Education in Policy and Practicedriven electrically which get carrier transport and current injection involved. One of the challenges is the current crowding effect, which easily occurs in the DUV LEDs. Hence, it is important to show people physical images on the underlying reason for the current crowding and the solution proposals for current spreading.作者: Alopecia-Areata 時間: 2025-3-22 08:18 作者: Coterminous 時間: 2025-3-22 12:10 作者: antiandrogen 時間: 2025-3-22 14:16
https://doi.org/10.1007/978-981-13-6179-1LED Epitaxy; Crystalline Quality; Light Extraction Efficiency; Internal Quantum Efficiency; Carrier Inje作者: antiandrogen 時間: 2025-3-22 19:15 作者: 無聊的人 時間: 2025-3-23 00:19 作者: GLOOM 時間: 2025-3-23 03:40
Improve the Current Spreading for DUV LEDs,driven electrically which get carrier transport and current injection involved. One of the challenges is the current crowding effect, which easily occurs in the DUV LEDs. Hence, it is important to show people physical images on the underlying reason for the current crowding and the solution proposals for current spreading.作者: engagement 時間: 2025-3-23 06:57
Improve the Hole Injection to Enhance the IQE for DUV LEDs,e ought to investigate the approaches to enable high-efficiency hole injection. In this chapter, we propose novel DUV LED architectures to make “hot” holes, increase the hole concentration in the p-type layer, and reduce the hole blocking effect that arises from the p-type electron blocking layer (p-EBL).作者: 出生 時間: 2025-3-23 11:53
Thermal Management for DUV LEDs,easily absorbed by the absorptive p-GaN layer and the metal contact in the way of free carrier absorption, which further increases the self-heating effect for DUV LEDs. This chapter briefs readers on the currently adopted technologies for better thermal management.作者: Euthyroid 時間: 2025-3-23 13:56
https://doi.org/10.1057/978-1-137-59911-7This chapter summarizes the content for this book and suggests the future research outlooks for DUV LEDs.作者: Genteel 時間: 2025-3-23 18:47
Conclusions and Outlook,This chapter summarizes the content for this book and suggests the future research outlooks for DUV LEDs.作者: 遷移 時間: 2025-3-23 22:45
Development Education in Policy and Practicedeep ultraviolet light-emitting diodes (DUV LEDs) promises the complete replacement for mercury-based fluorescence light tubes and this guarantees that the Minamata Convention on Mercury can be fulfilled by the end of the year of 2020. Therefore, developing high-efficiency AlGaN based DUV LEDs is re作者: 從屬 時間: 2025-3-24 05:16
Development Education in Policy and Practiceayers is the precondition for fabricating high-brightness DUV LEDs. This chapter will review the most adopted technologies for growing high-quality Al-rich AlGaN films, which is regarded as the milestone for making high-efficiency DUV LEDs.作者: Aprope 時間: 2025-3-24 09:03
Development Education in Policy and Practicedriven electrically which get carrier transport and current injection involved. One of the challenges is the current crowding effect, which easily occurs in the DUV LEDs. Hence, it is important to show people physical images on the underlying reason for the current crowding and the solution proposal作者: 飛行員 時間: 2025-3-24 14:14 作者: Abrupt 時間: 2025-3-24 17:29 作者: ACRID 時間: 2025-3-24 19:31 作者: happiness 時間: 2025-3-25 00:32
Policy-Based Lending by the World Bankeasily absorbed by the absorptive p-GaN layer and the metal contact in the way of free carrier absorption, which further increases the self-heating effect for DUV LEDs. This chapter briefs readers on the currently adopted technologies for better thermal management.作者: 制定法律 時間: 2025-3-25 04:14
Development Finance and Policy Reformr and metal layers. This chapter reviews and analyzes the approaches that have ever been used to improve the LEE. This chapter also points out that, the removal of the p-GaN layer can yield a high LEE without guaranteeing the enhanced wall plug efficiency in the same time. Thus, even more effort sha作者: 手勢 時間: 2025-3-25 07:31
SpringerBriefs in Applied Sciences and Technologyhttp://image.papertrans.cn/d/image/264679.jpg作者: Lineage 時間: 2025-3-25 12:40
Introduction,garded as the next revolutionary event for solid-state lighting. In this book, we will review the current status and summarize the challenges for DUV LEDs. Meanwhile, we also suggest the research spots that are worth investigating for DUV LEDs.作者: 長矛 時間: 2025-3-25 17:19
Screen the Polarization Induced Electric Field Within the MQWs for DUV LEDs,are grown, we shall avoid using the p-AlGaN/p-GaN hole injection layer. The p-AlGaN/p-GaN hole injection layer can have remarkably hole depletion effect at the interface for those growth orientations except the [0001] orientation.作者: debase 時間: 2025-3-25 21:40
Book 2019tum wells, suppress the TM polarization emission, and enhance the light escape from the semiconductor layer. It also demonstrates insightful device physics for DUV LEDs, which will greatly benefit the optoelectronic community..作者: 無辜 時間: 2025-3-26 04:04 作者: OASIS 時間: 2025-3-26 04:29 作者: 和音 時間: 2025-3-26 08:57 作者: Resistance 時間: 2025-3-26 13:33 作者: Presbyopia 時間: 2025-3-26 18:43
The Light Extraction Efficiency for DUV LEDs,he removal of the p-GaN layer can yield a high LEE without guaranteeing the enhanced wall plug efficiency in the same time. Thus, even more effort shall be made to achieve excellent ohmic contact for DUV LEDs.作者: 高談闊論 時間: 2025-3-27 00:11 作者: 沉思的魚 時間: 2025-3-27 01:35
Development Finance and Policy Reformare grown, we shall avoid using the p-AlGaN/p-GaN hole injection layer. The p-AlGaN/p-GaN hole injection layer can have remarkably hole depletion effect at the interface for those growth orientations except the [0001] orientation.作者: 俗艷 時間: 2025-3-27 08:12 作者: 可卡 時間: 2025-3-27 12:46
Development Finance and Policy Reformhe removal of the p-GaN layer can yield a high LEE without guaranteeing the enhanced wall plug efficiency in the same time. Thus, even more effort shall be made to achieve excellent ohmic contact for DUV LEDs.作者: 陰險 時間: 2025-3-27 14:27
Introduction,deep ultraviolet light-emitting diodes (DUV LEDs) promises the complete replacement for mercury-based fluorescence light tubes and this guarantees that the Minamata Convention on Mercury can be fulfilled by the end of the year of 2020. Therefore, developing high-efficiency AlGaN based DUV LEDs is re作者: brachial-plexus 時間: 2025-3-27 19:07 作者: 無孔 時間: 2025-3-28 01:37 作者: 符合規(guī)定 時間: 2025-3-28 05:26 作者: HAVOC 時間: 2025-3-28 09:31
Enhance the Electron Injection Efficiency for DUV LEDs,m three aspects: (1) electrons cannot be consumed by forming electron-hole pairs and recombine radiatively in the active region, which is due to the insufficient hole injection, (2) the electron have larger mobility and are more mobile, (3) The conduction band offset between the AlGaN based quantum 作者: Ibd810 時間: 2025-3-28 12:16 作者: sinoatrial-node 時間: 2025-3-28 16:00 作者: Malleable 時間: 2025-3-28 21:28
The Light Extraction Efficiency for DUV LEDs,r and metal layers. This chapter reviews and analyzes the approaches that have ever been used to improve the LEE. This chapter also points out that, the removal of the p-GaN layer can yield a high LEE without guaranteeing the enhanced wall plug efficiency in the same time. Thus, even more effort sha作者: rectocele 時間: 2025-3-29 00:55
,Preservation and Maintenance of the Odesa’s Historical Building Heritage – Nowadays Problem,ne of the main causes of structural damage. Foundations’ settlement monitoring and control of the structures durability with non-destructive and micro-invasive testing methods are being conducted. The article describes the historical facts of building maintenance, which explain the reasons for the appearance of deformations.作者: commonsense 時間: 2025-3-29 05:17 作者: 障礙物 時間: 2025-3-29 09:08
Yulin Qin,Daniel Bothell,John R. Andersonctrodes as shown In Fig. 1, except for the reverse flow where they become ineffective. Because the electrodes are immersed In the flow, the anode is typically made of an array of pins, or a pin-rake, supported in some suitable streamlined fashion. On the other hand, the cathode is a screen or some o作者: 熱情贊揚 時間: 2025-3-29 15:02 作者: IST 時間: 2025-3-29 17:41 作者: hypotension 時間: 2025-3-29 22:53
https://doi.org/10.1007/978-981-99-9445-8Tethered High-altitude Telecommunication Platform; Heterogeneity; Preventive Maintenance; Complex k-out作者: ANN 時間: 2025-3-30 00:35
