標題: Titlebook: Crystal Growth; Principles and Progr A. W. Vere Book 1987 Springer Science+Business Media New York 1987 Phase.defects.epitaxy.material.semi [打印本頁] 作者: 哄笑 時間: 2025-3-21 19:02
書目名稱Crystal Growth影響因子(影響力)
書目名稱Crystal Growth影響因子(影響力)學科排名
書目名稱Crystal Growth網(wǎng)絡公開度
書目名稱Crystal Growth網(wǎng)絡公開度學科排名
書目名稱Crystal Growth被引頻次
書目名稱Crystal Growth被引頻次學科排名
書目名稱Crystal Growth年度引用
書目名稱Crystal Growth年度引用學科排名
書目名稱Crystal Growth讀者反饋
書目名稱Crystal Growth讀者反饋學科排名
作者: Inoperable 時間: 2025-3-21 21:16 作者: gruelling 時間: 2025-3-22 02:49
Growth from the Liquid Phase,tructive to begin with a brief review of the basic techniques, this chapter is intended to emphasise the similarities underlying the apparent wide diversity of techniques. It also focuses attention on recent developments in Czochralski (CZ) and Bridgman growth, since these techniques are increasingl作者: 毀壞 時間: 2025-3-22 07:54 作者: 幾何學家 時間: 2025-3-22 09:46 作者: 破布 時間: 2025-3-22 13:13 作者: 破布 時間: 2025-3-22 19:27
Metaplectic groups and representations,When man first started to grow crystals he used the ways already perfected in nature, suspending small ‘seed’ crystals of the required material within a supersaturated solution or flux. Although frequently beautiful, the resulting crystals were small and imperfect, containing inclusions, impurities and stacking faults in the crystal lattice.作者: Vital-Signs 時間: 2025-3-23 01:17
Introduction,When man first started to grow crystals he used the ways already perfected in nature, suspending small ‘seed’ crystals of the required material within a supersaturated solution or flux. Although frequently beautiful, the resulting crystals were small and imperfect, containing inclusions, impurities and stacking faults in the crystal lattice.作者: Basilar-Artery 時間: 2025-3-23 04:58
https://doi.org/10.1007/978-1-4757-9897-5Phase; defects; epitaxy; material; semiconductor作者: Goblet-Cells 時間: 2025-3-23 07:28 作者: craven 時間: 2025-3-23 11:02
https://doi.org/10.1007/BFb0077830 the supersaturation of the gas or liquid phase with respect to the component whose growth is required. Too little supersaturation will result in an unacceptably slow growth rate. At the other extreme of the supersaturation range the rate of condensation exceeds the rate at which the atoms or molecu作者: 積習已深 時間: 2025-3-23 14:07
Asen L. Dontchev,Tullio Zolezzice is perfect, this is never the case. The elevated temperature results in the formation of lattice point-defects. As the temperature of the solid increases, so does the amplitude of oscillation of the atoms on the lattice sites. An increasing fraction of these are displaced from their sites to prod作者: 冒煙 時間: 2025-3-23 21:51 作者: Ptosis 時間: 2025-3-24 01:44
Asen L. Dontchev,Tullio Zolezziries of origin. For example, in silicon processing, where the product of vapour phase reactions may be polysilicon, epitaxial silicon or amorphous oxides or nitrides, the term CVD (Chemical Vapour Deposition) is applied to all processes, irrespective of the crystalline or amorphous state of the prod作者: BOLT 時間: 2025-3-24 04:54 作者: abreast 時間: 2025-3-24 07:39 作者: 哺乳動物 時間: 2025-3-24 11:02
relatively simple, the complexities of the interactions involved and the individuality of different materials systems and growth processes have ensured that experimentally verifiable predictions from scientific principles have met with only limited success - good crystal growth remains an art. However, recent978-1-4757-9899-9978-1-4757-9897-5作者: 詩集 時間: 2025-3-24 16:08
Book 1987 so that only limited knowledge is required to understand the significance of recent developments. Further assistance for the non-specialist is provided by the summary of abstracts in Part 2, which includes many of the major papers published in the research field. Crystal Growth of Semiconductor Mat作者: Introduction 時間: 2025-3-24 19:13
Growth from the Liquid Phase,ersity of techniques. It also focuses attention on recent developments in Czochralski (CZ) and Bridgman growth, since these techniques are increasingly important in commercial production of bulk devices and the large-area substrates for epitaxial growth.作者: 新星 時間: 2025-3-25 01:20
https://doi.org/10.1007/BFb0077830les can be incorporated onto the crystal lattice, leading to breakdown of the single-crystal interface and the onset of non-uniform cellular or dendritic growth (see Chapter 3). The object of good crystal growth is therefore to achieve and maintain a constant level of supersaturation within this range.作者: 聽覺 時間: 2025-3-25 04:10
Asen L. Dontchev,Tullio Zolezziuce lattice vacancies and interstitials. In the simple Frenkel defect (Figure 3.1a) both are retained in the lattice, whereas in the Schottky defect (Figure 3.1b) ejected atoms migrate to a free surface or interface.作者: EXTOL 時間: 2025-3-25 08:52
viewpoint, so that only limited knowledge is required to understand the significance of recent developments. Further assistance for the non-specialist is provided by the summary of abstracts in Part 2, which includes many of the major papers published in the research field. Crystal Growth of Semicon作者: 群島 時間: 2025-3-25 14:19 作者: 慢慢流出 時間: 2025-3-25 16:16
Asen L. Dontchev,Tullio Zolezzice of the epitaxial aspects. Chemists draw an even finer distinction between OMVPE and MOVPE since the term “organometallic” refers to those compounds in which the carbon atom is directly bound to the metal atom, whereas “metalorganic” is a general term referring to any compound containing metal atoms in combination with organic radicals.作者: 砍伐 時間: 2025-3-25 22:49
Vapour Phase Epitaxy,ce of the epitaxial aspects. Chemists draw an even finer distinction between OMVPE and MOVPE since the term “organometallic” refers to those compounds in which the carbon atom is directly bound to the metal atom, whereas “metalorganic” is a general term referring to any compound containing metal atoms in combination with organic radicals.作者: 割公牛膨脹 時間: 2025-3-26 02:12
Transport, Nucleation and Growth,les can be incorporated onto the crystal lattice, leading to breakdown of the single-crystal interface and the onset of non-uniform cellular or dendritic growth (see Chapter 3). The object of good crystal growth is therefore to achieve and maintain a constant level of supersaturation within this range.作者: Nonconformist 時間: 2025-3-26 07:38 作者: Eosinophils 時間: 2025-3-26 11:13 作者: violate 時間: 2025-3-26 13:02
Trends in Crystal Growth,rowth occurred from the adsorption of a single precursor species, was kinetically limited by mobility on the growth surface and was unaffected by the desorption of product species, were of little practical significance. Growth of good quality single-crystals remained essentially an art rather than a science.作者: IOTA 時間: 2025-3-26 19:57 作者: 輕打 時間: 2025-3-27 00:55 作者: 著名 時間: 2025-3-27 04:17
Renewable Resources from Forest Products for High Temperature Resistant Polymers eroded considerably by the price raise of curde oil. Never before have plastics been faced with such a tough competition from conventional materials. Oil as a feedstock is also not renewable and one day, sooner or later, it will dry out.作者: NAV 時間: 2025-3-27 09:12 作者: Ondines-curse 時間: 2025-3-27 12:08 作者: 反抗者 時間: 2025-3-27 14:56
also wish to thank Mrs. Verona Kuhle for her secretarial help. We are grateful to Dr. Naranjan S. Dhalla, Editor-in-Chief of Molecular and Cellular Biochemistry for his interest and encouragement, and for agreeing to publish this issue in honor of Albert Wollenberger. ROLAND VETTER and ERNST -GEORG KRAUSE Ma978-1-4613-1289-5作者: 廢墟 時間: 2025-3-27 20:31 作者: 連詞 時間: 2025-3-28 02:00
Visualisation of?3D Uncertainties for?Subsurface Infrastructure Using Augmented Realityants agreed, that the insufficient availability of vertical coordinates for the cables at present constitutes the biggest challenge. However, they emphasised the future potential of the AR solution in the prospect of ongoing improvements in data quality prompted by the new Danish data model for exchanging utility information.作者: indices 時間: 2025-3-28 03:43
