標(biāo)題: Titlebook: Crosstalk in Modern On-Chip Interconnects; A FDTD Approach B.K. Kaushik,V. Ramesh Kumar,Amalendu Patnaik Book 2016 The Author(s) 2016 On-ch [打印本頁(yè)] 作者: 閘門 時(shí)間: 2025-3-21 19:41
書(shū)目名稱Crosstalk in Modern On-Chip Interconnects影響因子(影響力)
書(shū)目名稱Crosstalk in Modern On-Chip Interconnects影響因子(影響力)學(xué)科排名
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書(shū)目名稱Crosstalk in Modern On-Chip Interconnects網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Crosstalk in Modern On-Chip Interconnects被引頻次
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書(shū)目名稱Crosstalk in Modern On-Chip Interconnects讀者反饋
書(shū)目名稱Crosstalk in Modern On-Chip Interconnects讀者反饋學(xué)科排名
作者: 令人苦惱 時(shí)間: 2025-3-21 21:42 作者: ostensible 時(shí)間: 2025-3-22 02:48 作者: 注意力集中 時(shí)間: 2025-3-22 04:59
Crosstalk Modeling with Width Dependent MFP in MLGNR Interconnects Using FDTD Technique,ates the width dependent MFP parameter of the MLGNR while taking into account the edge roughness. This helps in accurate estimation of the crosstalk-induced performance in comparison to the conventional models. The crosstalk noise is comprehensively analyzed by examining both functional and dynamic crosstalk effects.作者: Amorous 時(shí)間: 2025-3-22 11:53
B.K. Kaushik,V. Ramesh Kumar,Amalendu PatnaikPresents the modeling of on-chip interconnects using FDTD.Includes the modeling of future VLSI interconnects like.carbon nanotubes and graphene nanoribbons.Discusses fast and accurate analysis of perf作者: 變形詞 時(shí)間: 2025-3-22 15:22
SpringerBriefs in Applied Sciences and Technologyhttp://image.papertrans.cn/d/image/240433.jpg作者: 變形詞 時(shí)間: 2025-3-22 17:55
Crosstalk in Modern On-Chip Interconnects978-981-10-0800-9Series ISSN 2191-530X Series E-ISSN 2191-5318 作者: scotoma 時(shí)間: 2025-3-22 23:35
DTD model of MWCNT while incorporating the quantum effects of nanowire and nonlinear effects of CMOS driver. To reduce the computational effort required for analyzing the CMOS driver, a simplified but accurate model is employed named as modified alpha-power law model.作者: 缺乏 時(shí)間: 2025-3-23 03:23 作者: 物種起源 時(shí)間: 2025-3-23 08:15 作者: micturition 時(shí)間: 2025-3-23 09:52 作者: 索賠 時(shí)間: 2025-3-23 17:47
ribbon (GNR) are discussed. The characteristics and semiconducting/metallic properties of graphene-based on-chip interconnects are presented. Depending on the physical configuration, equivalent electrical models of MWCNT and MLGNR interconnect lines are also introduced. An extensive review on perfor作者: 寬度 時(shí)間: 2025-3-23 20:22 作者: Charlatan 時(shí)間: 2025-3-23 23:07
DTD model of MWCNT while incorporating the quantum effects of nanowire and nonlinear effects of CMOS driver. To reduce the computational effort required for analyzing the CMOS driver, a simplified but accurate model is employed named as modified alpha-power law model.作者: 裝飾 時(shí)間: 2025-3-24 04:32
Welt, Endlichkeit und Faktizit?tates the width dependent MFP parameter of the MLGNR while taking into account the edge roughness. This helps in accurate estimation of the crosstalk-induced performance in comparison to the conventional models. The crosstalk noise is comprehensively analyzed by examining both functional and dynamic 作者: insincerity 時(shí)間: 2025-3-24 08:53
Die horizontlose Welt der Wissenschaft the stability of the proposed US-FDTD model is not constrained by the CFL condition and is therefore unconditionally stable. The accuracy of the proposed model is validated against the conventional FDTD model. It is observed that the US-FDTD model is as accurate as the conventional FDTD model while作者: CHASM 時(shí)間: 2025-3-24 13:28
Introduction to On-Chip Interconnects and Modeling,blems. Therefore, researchers are forced to find an alternative solution for future high-speed global VLSI interconnects. This chapter introduces the evolution of graphene interconnect materials and the challenges associated with them. This chapter also introduces the FDTD technique for the modeling of on-chip interconnects.作者: Reservation 時(shí)間: 2025-3-24 15:40
Interconnect Modeling, CNT and GNR Structures, Properties, and Characteristics,g on the physical configuration, equivalent electrical models of MWCNT and MLGNR interconnect lines are also introduced. An extensive review on performance analysis of on-chip interconnects is presented.作者: 有效 時(shí)間: 2025-3-24 19:38 作者: Ruptured-Disk 時(shí)間: 2025-3-25 01:47
An Efficient US-FDTD Model for Crosstalk Analysis of On-Chip Interconnects,osed model is validated against the conventional FDTD model. It is observed that the US-FDTD model is as accurate as the conventional FDTD model while being highly time efficient. Moreover, the performance of Cu interconnect is compared with MWCNT and MLGNR interconnects under the influence of crosstalk.作者: Schlemms-Canal 時(shí)間: 2025-3-25 05:43 作者: enchant 時(shí)間: 2025-3-25 10:30 作者: 安心地散步 時(shí)間: 2025-3-25 15:37 作者: 聾子 時(shí)間: 2025-3-25 16:24 作者: 榮幸 時(shí)間: 2025-3-25 21:27 作者: 強(qiáng)化 時(shí)間: 2025-3-26 01:54 作者: 減弱不好 時(shí)間: 2025-3-26 05:50 作者: 逃避現(xiàn)實(shí) 時(shí)間: 2025-3-26 09:58 作者: 束縛 時(shí)間: 2025-3-26 13:54 作者: NOTCH 時(shí)間: 2025-3-26 19:12 作者: bizarre 時(shí)間: 2025-3-27 00:47 作者: JEER 時(shí)間: 2025-3-27 01:43
An Efficient US-FDTD Model for Crosstalk Analysis of On-Chip Interconnects, the stability of the proposed US-FDTD model is not constrained by the CFL condition and is therefore unconditionally stable. The accuracy of the proposed model is validated against the conventional FDTD model. It is observed that the US-FDTD model is as accurate as the conventional FDTD model while作者: Crater 時(shí)間: 2025-3-27 06:19 作者: CULP 時(shí)間: 2025-3-27 12:54 作者: palliative-care 時(shí)間: 2025-3-27 16:16 作者: 裂隙 時(shí)間: 2025-3-27 18:14
Die Ordnung in den Unternehmungen der Eisen Schaffenden Industrie,t die Zahl der von einer Stelle geleiteten Produktionsst?tten, also in der Regel die Zahl der in einer Unternehmung enthaltenen Betriebe bzw. die Weite des Produktionsprozesses; z. B. z?hlt die M?belindustrie zu jenen Industrien, in denen die einzelne Unternehmung fast ausnahmslos nur eine Produktio
