標(biāo)題: Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,John L. Moll Book 1986 Springer Science+Business Media New Yo [打印本頁] 作者: peak-flow-meter 時(shí)間: 2025-3-21 17:39
書目名稱Computer-Aided Design and VLSI Device Development影響因子(影響力)
書目名稱Computer-Aided Design and VLSI Device Development影響因子(影響力)學(xué)科排名
書目名稱Computer-Aided Design and VLSI Device Development網(wǎng)絡(luò)公開度
書目名稱Computer-Aided Design and VLSI Device Development網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Computer-Aided Design and VLSI Device Development被引頻次
書目名稱Computer-Aided Design and VLSI Device Development被引頻次學(xué)科排名
書目名稱Computer-Aided Design and VLSI Device Development年度引用
書目名稱Computer-Aided Design and VLSI Device Development年度引用學(xué)科排名
書目名稱Computer-Aided Design and VLSI Device Development讀者反饋
書目名稱Computer-Aided Design and VLSI Device Development讀者反饋學(xué)科排名
作者: Enliven 時(shí)間: 2025-3-21 22:47
Introduction to Numerical Simulation Systemons. In 1969, Barron [1.1] from Stanford University simulated a MOSFET transistor using a finite-difference method to study the subthreshold conduction and saturation mechanism. Vandorpe [1.2] also simulated and modeled the saturation region with the finite-difference program in 1972. After the self作者: Alopecia-Areata 時(shí)間: 2025-3-22 03:40
Process Simulatione such a complex process is no longer desirable because of the enormous cost and turn-around time. From this point of view, computer simulation is a cost-effective alternative, not only supplying a right answer for increasingly tight processing windows, but also serving as a tool to develop future t作者: Vo2-Max 時(shí)間: 2025-3-22 06:56 作者: 官僚統(tǒng)治 時(shí)間: 2025-3-22 11:35 作者: delta-waves 時(shí)間: 2025-3-22 15:37 作者: delta-waves 時(shí)間: 2025-3-22 19:41
Transistor Design for Submicron CMOS Technologynology will first be discussed. Then the concerns for the design of n and p-channel MOSFETs with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.作者: STANT 時(shí)間: 2025-3-22 23:18 作者: Juvenile 時(shí)間: 2025-3-23 04:55
A Study of LDD Device Structure Using 2-D Simulations illustrate the usefulness and necessity of using computer aided design tools in the fabrication of VLSI devices. First, the problem of high electric field in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. F作者: badinage 時(shí)間: 2025-3-23 08:14
MOSFET Scaling by CADDETprocess of scaling. As pointed out in the overview chapter, the long channel relations are not strictly valid for horizontal dimensions that are comparable to the vertical dimensions. In this example, the operating voltage is kept constant. The horizontal dimension, .., and the vertical dimension, .作者: Fabric 時(shí)間: 2025-3-23 10:44 作者: Condense 時(shí)間: 2025-3-23 17:28 作者: 細(xì)頸瓶 時(shí)間: 2025-3-23 18:20 作者: SPER 時(shí)間: 2025-3-23 22:56 作者: 新陳代謝 時(shí)間: 2025-3-24 04:48 作者: 步履蹣跚 時(shí)間: 2025-3-24 07:01
John T. Cannon,Sigalia DostrovskyTo simulate the parasitic capacitance/resistance, it is necessary to solve the Poisson (or Laplace) equation in at least two dimensions with arbitrary input geometry.作者: inventory 時(shí)間: 2025-3-24 12:30
Some Thoughts on Plan and MarketDrain-induced barrier lowering (DIBL)[7.1]-[7.6] has been studied by many workers.作者: 喊叫 時(shí)間: 2025-3-24 15:04 作者: Irrigate 時(shí)間: 2025-3-24 22:09
Drain-Induced Barrier Lowering In Short Channel TransistorsDrain-induced barrier lowering (DIBL)[7.1]-[7.6] has been studied by many workers.作者: FAR 時(shí)間: 2025-3-25 02:25 作者: 障礙 時(shí)間: 2025-3-25 05:43
978-1-4612-9605-8Springer Science+Business Media New York 1986作者: periodontitis 時(shí)間: 2025-3-25 07:57 作者: 交響樂 時(shí)間: 2025-3-25 13:04 作者: Efflorescent 時(shí)間: 2025-3-25 18:08
The Evolution of Development Thinkinge such a complex process is no longer desirable because of the enormous cost and turn-around time. From this point of view, computer simulation is a cost-effective alternative, not only supplying a right answer for increasingly tight processing windows, but also serving as a tool to develop future t作者: Nonconformist 時(shí)間: 2025-3-25 22:14
The Evolution of Development Thinkingplanar, and the impurity profiles of the devices are complicated and may not be expressed accurately in Gaussian form. The increased complexity of the device structure is necessary for optimization of the device performance, such as minimizing the drain-induced barrier-lowering effects, or enhancing作者: 飛鏢 時(shí)間: 2025-3-26 02:46
Waves in Long-term Economic Development Hewlett-Packard Laboratories. In this chapter, CAD is discussed from the user point of view. The methodology for using the simulation tools in the most effective way is presented. Then case studies will be presented in the following chapters which show in detail how simulation tools are used in dev作者: medium 時(shí)間: 2025-3-26 06:40 作者: encyclopedia 時(shí)間: 2025-3-26 11:47
Some Thoughts on Plan and Marketnology will first be discussed. Then the concerns for the design of n and p-channel MOSFETs with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.作者: 火海 時(shí)間: 2025-3-26 13:39 作者: 敏捷 時(shí)間: 2025-3-26 20:33 作者: 偏見 時(shí)間: 2025-3-27 00:19 作者: Banister 時(shí)間: 2025-3-27 04:01
Gunnar Eliasson,Pontus Braunerhjelm down of geometrical dimensions introduces two-dimensional and even three-dimensional effects both in transistor behavior and in the parasitics. The scaling of interconnections is usually emphasized primarily in the width and spacing of the lines. For example, the line/space design rule (in micromet作者: FOIL 時(shí)間: 2025-3-27 06:18
Methodology in Computer-Aided Design for Process and Device Development Hewlett-Packard Laboratories. In this chapter, CAD is discussed from the user point of view. The methodology for using the simulation tools in the most effective way is presented. Then case studies will be presented in the following chapters which show in detail how simulation tools are used in device designs.作者: 巧辦法 時(shí)間: 2025-3-27 11:04
Transistor Design for Submicron CMOS Technologynology will first be discussed. Then the concerns for the design of n and p-channel MOSFETs with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.作者: fleeting 時(shí)間: 2025-3-27 15:25
Process Simulationechnologies. When coupled with a device analysis program, a process simulator has proven to be a powerful design tool because the process sensitivity to device parameters can be easily extracted by simple changes made to processing conditions in computer inputs. [2.1].作者: CHOKE 時(shí)間: 2025-3-27 18:47
Device Simulation the device reliability, e.g., reducing the electric field at the drain of the MOSFET. Therefore, in the development of VLSI MOS technology, it is essential to be able to simulate the electrical characteristics of devices which have complicated structures. The GEMINI program provides this capability.作者: mettlesome 時(shí)間: 2025-3-28 00:53 作者: 搖曳 時(shí)間: 2025-3-28 03:35
Development of Isolation Structures for Applications in VLSI 2 μm or less, narrow width effects become a major issue. [10.2]–[10.5]. These effects are dependent on the isolation structures since the channel width of the device is defined by the field isolation. Many novel isolation structures have been investigated for applications in VLSI [10.6]–[10.14].作者: CARE 時(shí)間: 2025-3-28 07:18
Harold Paredes-Frigolett,Andreas Pykaortance of secondary physical effects can be seen. Device width will not be scaled, the current drive capability will be expressed for a fixed width. Breakdown and punchthrough voltages must be sufficiently greater than the supply voltage so that reliability is not a problem. For this example, power density is not a limitation.作者: Creditee 時(shí)間: 2025-3-28 10:52
MOSFET Scaling by CADDETortance of secondary physical effects can be seen. Device width will not be scaled, the current drive capability will be expressed for a fixed width. Breakdown and punchthrough voltages must be sufficiently greater than the supply voltage so that reliability is not a problem. For this example, power density is not a limitation.作者: 減去 時(shí)間: 2025-3-28 15:49 作者: 全面 時(shí)間: 2025-3-28 19:04
Harold Paredes-Frigolett,Andreas Pykafield in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. Finally, the performance, characteristic, physics and design considerations of LDD devices are presented in detail.作者: reptile 時(shí)間: 2025-3-29 01:18 作者: 蟄伏 時(shí)間: 2025-3-29 05:59
Book 1986). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art device and process development are presented. This book is intended as a reference for engineers involved in VLSI develop- ment who have to solve many device and process problems. CAD specialists will also find this b作者: REIGN 時(shí)間: 2025-3-29 07:40 作者: 夸張 時(shí)間: 2025-3-29 14:09
Overviewe of the simple device structure. VLSI development for greater functional complexity and circuit performance on a single chip is strongly motivated by the reduced cost per device and has been achieved in part by larger chip areas, but predominantly by smaller device dimensions and the clever design of devices and circuits.作者: Feature 時(shí)間: 2025-3-29 17:46
The Evolution of Development Thinkingechnologies. When coupled with a device analysis program, a process simulator has proven to be a powerful design tool because the process sensitivity to device parameters can be easily extracted by simple changes made to processing conditions in computer inputs. [2.1].作者: drusen 時(shí)間: 2025-3-29 21:11 作者: Musculoskeletal 時(shí)間: 2025-3-30 01:07 作者: Foam-Cells 時(shí)間: 2025-3-30 07:24 作者: Diatribe 時(shí)間: 2025-3-30 09:02
0893-3405 ograms to many cases of device developments. The text began as publications in journals and con- ference proceedings, as weil as lecture notes for a Hewlett-Pac978-1-4612-9605-8978-1-4613-2553-6Series ISSN 0893-3405 作者: 逢迎春日 時(shí)間: 2025-3-30 14:09
https://doi.org/10.1057/9780230288447ram for GaAs MESFETs. Most of the programs mentioned above were developed as research tools rather than for the general user(design tools). More stress had been put on the development of a stable and fast algorithm and the implementations of the physical mechanisms rather than on the user interface.作者: CIS 時(shí)間: 2025-3-30 19:41
Gunnar Eliasson,Pontus Braunerhjelminterline capacitance component in the total parasitic capacitance of a circuit. This means that the parasitic capacitance is not scaled down proportionally as the horizontal dimensions are scaled down.作者: barium-study 時(shí)間: 2025-3-30 21:59
The Surface Inversion Problem in Trench Isolated CMOS
