標(biāo)題: Titlebook: Compound Semiconductors Strained Layers and Devices; S. Jain,M. Willander,R. Overstraeten Book 2000 Springer Science+Business Media New Yo [打印本頁] 作者: 服裝 時間: 2025-3-21 18:58
書目名稱Compound Semiconductors Strained Layers and Devices影響因子(影響力)
書目名稱Compound Semiconductors Strained Layers and Devices影響因子(影響力)學(xué)科排名
書目名稱Compound Semiconductors Strained Layers and Devices網(wǎng)絡(luò)公開度
書目名稱Compound Semiconductors Strained Layers and Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Compound Semiconductors Strained Layers and Devices被引頻次
書目名稱Compound Semiconductors Strained Layers and Devices被引頻次學(xué)科排名
書目名稱Compound Semiconductors Strained Layers and Devices年度引用
書目名稱Compound Semiconductors Strained Layers and Devices年度引用學(xué)科排名
書目名稱Compound Semiconductors Strained Layers and Devices讀者反饋
書目名稱Compound Semiconductors Strained Layers and Devices讀者反饋學(xué)科排名
作者: 搬運(yùn)工 時間: 2025-3-21 22:28 作者: Measured 時間: 2025-3-22 02:48 作者: Brocas-Area 時間: 2025-3-22 06:42 作者: 巧思 時間: 2025-3-22 08:44
Strain relaxation and defects,for several cases in this chapter. Strain relaxation has been measured using a very large number of techniques. Many different semiconductor heterostructures have been investigated. Additional measurements of strain are discussed along with the optical properties in .作者: nitric-oxide 時間: 2025-3-22 16:42
Summary and conclusions,GaAs, AlxGa1–xAs/GaAs, InP/InP and Ga047In0.53As/InP using both the hydrogen and the nitrogen as the carrier gases. For GaAs and InP the crystal quality and purity of the epilayers grown in nitrogen was comparable to those of the epilayers grown in hydrogen.作者: nitric-oxide 時間: 2025-3-22 18:36
Overview: 978-1-4613-7000-0978-1-4615-4441-8作者: Ovulation 時間: 2025-3-23 00:16
Electronic Materials Serieshttp://image.papertrans.cn/c/image/231861.jpg作者: 欺騙世家 時間: 2025-3-23 02:58 作者: Thyroiditis 時間: 2025-3-23 05:33
https://doi.org/10.1007/978-3-658-15423-3Band structure of unstrained zinc blende semiconductors is shown schematically in Fig. 5.1(a). A semiconductor layer grown on a substrate of different material is generally strained. The strain is biaxial. We discuss the modification in the bandstructure caused by the strain in this section.作者: lesion 時間: 2025-3-23 13:33
Strain and critical thickness,Consider an epilayer of a semiconductor with lattice constant .} grown on a thick substrate with lattice constant .} (illustrated in Fig. 3.1). The lattice mismatch is measured by the misfit parameter .} defined below [3, 235]作者: 高談闊論 時間: 2025-3-23 15:32 作者: insert 時間: 2025-3-23 19:56 作者: cravat 時間: 2025-3-24 01:25 作者: 換話題 時間: 2025-3-24 03:54 作者: 不透氣 時間: 2025-3-24 10:01
Sickenversteifte Blechkonstruktionen, extensively used methods are electron microscopy, X-ray diffraction and rocking curves, reflection high energy electron diffraction (RHEED), and optical methods. Recently micro-Raman and magnetic methods have also been used. Micro-Raman method has been reviewed by us recently [52, 141, 142]. We dis作者: 笨拙的你 時間: 2025-3-24 11:31 作者: 貪婪的人 時間: 2025-3-24 16:12
Bewertung von OEE-Verbesserungen,ily than .}-type. Theoretical work shows that Al and Ga form stable deep centers in most II-VI semiconductors, similar to .} centers in AlGaAs. Chlorine is an effective n-type dopant in ZnSe, and wider bandgap ZnMgSSe alloy[405, and references given there in] and BeMgZnSe alloy [406]–[408]. Chlorine作者: 他去就結(jié)束 時間: 2025-3-24 22:47
Bewertung von OEE-Verbesserungen,d can not be suppressed by improving the quality and purity of the sample. Early predictions that strain can suppress the Auger recombination and reduce the threshold current were made by Yablonovitch and Kane [51]. In the following years strain played an important role in improving the performance 作者: curriculum 時間: 2025-3-25 01:08 作者: Insulin 時間: 2025-3-25 03:42 作者: CLAY 時間: 2025-3-25 07:58 作者: 耕種 時間: 2025-3-25 13:55
Characterization and growth, extensively used methods are electron microscopy, X-ray diffraction and rocking curves, reflection high energy electron diffraction (RHEED), and optical methods. Recently micro-Raman and magnetic methods have also been used. Micro-Raman method has been reviewed by us recently [52, 141, 142]. We dis作者: 法律的瑕疵 時間: 2025-3-25 19:38 作者: 貪婪性 時間: 2025-3-25 20:13 作者: 幼兒 時間: 2025-3-26 00:58 作者: 粗糙 時間: 2025-3-26 06:37 作者: 新陳代謝 時間: 2025-3-26 11:21
Summary and conclusions,conductor epilayers are generally grown with hydrogen carrier gas. Since hydrogen is highly explosive its use involves expensive gas detecting system. As discussed in chapter 2 nitrogen has higher efficiency of energy transfer during collision with the source molecule and is more efficient in decomp作者: Lacerate 時間: 2025-3-26 14:24
Sickenversteifte Blechkonstruktionen,proach [2]. It has been shown recently that their theory is equivalent to the theory of Frank and Van der Merwe and the two theories yield identical results [3]. Use of semiconductors of different bandgaps in a device was suggested by Shockley in a patent [4] in 1951. The two ideas, one of electrica作者: 遠(yuǎn)地點(diǎn) 時間: 2025-3-26 18:43 作者: 噴出 時間: 2025-3-26 22:33 作者: 檢查 時間: 2025-3-27 03:28 作者: Statins 時間: 2025-3-27 05:50
Compound Semiconductors Strained Layers and Devices作者: Antigen 時間: 2025-3-27 12:33
Compound Semiconductors Strained Layers and Devices978-1-4615-4441-8作者: Boycott 時間: 2025-3-27 13:45
Introduction,proach [2]. It has been shown recently that their theory is equivalent to the theory of Frank and Van der Merwe and the two theories yield identical results [3]. Use of semiconductors of different bandgaps in a device was suggested by Shockley in a patent [4] in 1951. The two ideas, one of electrica作者: BINGE 時間: 2025-3-27 19:23
Electrical and magnetic properties, The reason for the abrupt decrease is not understood. The PL of the Cl doped samples was dominated by donor bound excitons for Cl concentrations ? 4 × 1018 cm–3. No deep level PL was observed. The intensity of the donor bound excitonic PL increased with Cl concentration up to 1 x 1017 cm–3 and then作者: Veneer 時間: 2025-3-28 00:51
Strained layer optoelectronic devices,as the temperature increases and bandgap decreases. Therefore the harmful effect of Auger recombination is more serious in mid-IR lasers. The mid-IR lasers do not yet operate at room temperature because of the limitation due to Auger recombination. Mid-IR lasers using Sb based III-V semiconductor st作者: 柱廊 時間: 2025-3-28 05:27
Transistors,signated as pseudomorphic or PM-HEMTs, are fabricated on GaAs substrates. InGaAs alloys with high In concentration have considerably higher mobility and larger intervalley separation in the conduction band than GaAs. For several years InGaAs strained layer devices dominated the HEMT technology [12].作者: Arteriography 時間: 2025-3-28 07:15 作者: Infantry 時間: 2025-3-28 13:42 作者: Malfunction 時間: 2025-3-28 17:41
Taotao Cai,Rong-Hua Li,Jeffrey Xu Yu,Rui Mao,Yadi Cai. Sollte sich der Gesetzgeber hinsichtlich der Verm?gensteuer für eine Neubewertung des Grundbesitzes entscheiden, so hat er dafür bis zum 31.12.2001 Zeit. Diese neue Rechtslage soll für die Erbschaft- und Schenkungsteuer jedoch bereits rückwirkend ab dem 1.1.1996 gelten. Dieser zeitlich engen Vorga作者: prodrome 時間: 2025-3-28 19:41 作者: 取之不竭 時間: 2025-3-28 23:30
Knowledge Domain Visualization,ges Stück Leinwand von der in obiger Abbildung dargestellten Form genommen und bis ~ 50° durchgemessen, was ohne Umh?ngung m?glich war. Nach dem Tabellenblatt gibt Abb. 29 die Versuchsergebnisse in der üblichen Darstellung des G?ttinger Polardiagramms .. als Funktion .. und ...作者: 議程 時間: 2025-3-29 03:23
Quantitative Logic and Soft Computing978-3-642-15660-1Series ISSN 1867-5662 Series E-ISSN 1867-5670 作者: GOAD 時間: 2025-3-29 10:49
