標題: Titlebook: Chemical-Mechanical Planarization of Semiconductor Materials; Michael R. Oliver (Rodel Fellow) Book 2004 Springer-Verlag Berlin Heidelberg [打印本頁] 作者: sprawl 時間: 2025-3-21 19:31
書目名稱Chemical-Mechanical Planarization of Semiconductor Materials影響因子(影響力)
書目名稱Chemical-Mechanical Planarization of Semiconductor Materials影響因子(影響力)學科排名
書目名稱Chemical-Mechanical Planarization of Semiconductor Materials網絡公開度
書目名稱Chemical-Mechanical Planarization of Semiconductor Materials網絡公開度學科排名
書目名稱Chemical-Mechanical Planarization of Semiconductor Materials被引頻次
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書目名稱Chemical-Mechanical Planarization of Semiconductor Materials讀者反饋
書目名稱Chemical-Mechanical Planarization of Semiconductor Materials讀者反饋學科排名
作者: ethereal 時間: 2025-3-21 20:16 作者: Connotation 時間: 2025-3-22 01:05 作者: 簡潔 時間: 2025-3-22 07:27 作者: PET-scan 時間: 2025-3-22 12:38
CMP Cleaning,nology hurdles, the CMP clean must also target manufacturing requirements driven by cost of ownership considerations. It is no small wonder then that many different cleaning technologies, both complimentary and competitive, are found in semiconductor manufacturing facilities.作者: 高腳酒杯 時間: 2025-3-22 15:32 作者: 高腳酒杯 時間: 2025-3-22 18:23
D. W. Christianson,W. N. Lipscomby spin-on glass (SOG), reduce many of the problems of multi-level metal integration approaches, however SOG introduces additional difficulties of its own, and has been primarily used for two and three level metal structures [2].作者: Antarctic 時間: 2025-3-22 21:58
Anthony Mittermaier,Erick Menesesreason the chapter is grouped into the major CMP process types: oxide, tungsten, STI and copper. There are other CMP processes, but these four areas cover most of the issues with the more uncommon processes, such as poly-silicon CMP.作者: ILEUM 時間: 2025-3-23 01:46
CMP Technology,y spin-on glass (SOG), reduce many of the problems of multi-level metal integration approaches, however SOG introduces additional difficulties of its own, and has been primarily used for two and three level metal structures [2].作者: 修改 時間: 2025-3-23 07:41 作者: 半身雕像 時間: 2025-3-23 11:15 作者: 簡略 時間: 2025-3-23 15:21 作者: 清澈 時間: 2025-3-23 18:57 作者: Consensus 時間: 2025-3-24 01:32 作者: ticlopidine 時間: 2025-3-24 06:13 作者: BOAST 時間: 2025-3-24 08:36
D. W. Christianson,W. N. Lipscombicate high performance multiple level metal structures. Specifically, after the first level of metal was fabricated, and a nearly conformal silicon dioxide interlevel dielectric (ILD) layer was deposited, the second level metal has several fabrication problems, including deposition, resist patternin作者: 高度 時間: 2025-3-24 12:19 作者: 發(fā)起 時間: 2025-3-24 18:41
Protein Structure — Function Relationship presumably due to the hardness and the relative inertness of tungsten. To overcome these difficulties, an oxidizer is incorporated in tungsten CMP slurries. Kaufman et al. [1] introduced the first widely accepted model of the tungsten CMP process; a part of that work included a model for the remova作者: 胰臟 時間: 2025-3-24 22:35
Morag A. Grassie,Graeme Milligan and incompatible with cleanroom processes, CMP has evolved into a critical process technology that includes not only the planarization step, but the post-CMP cleaning process as well. It is used not only in back end of the line interconnect processes, but is also used for critical process steps in 作者: 業(yè)余愛好者 時間: 2025-3-25 01:51 作者: Cholecystokinin 時間: 2025-3-25 05:41 作者: archenemy 時間: 2025-3-25 08:12
https://doi.org/10.1007/978-3-642-87969-2d from FEOL applications such as shallow trench isolation and polysilicon contacts to BEOL including planarization of dielectrics and conductors. From a CMP cleaning perspective, the ubiquitousness of CMP requires that cleaning technology is capable of cleaning a wide range of contaminants and mater作者: 牢騷 時間: 2025-3-25 14:09 作者: colony 時間: 2025-3-25 17:41
Anthony Mittermaier,Erick Menesesther step in semiconductor processing, the presence of any CMP step comes with a significant number of integration issues, and their associated performance tradeoffs. This chapter addresses those issues and tradeoffs. Though there are a number of integration issues that are common to all CMP steps, 作者: 斜 時間: 2025-3-25 23:45
Chemical-Mechanical Planarization of Semiconductor Materials978-3-662-06234-0Series ISSN 0933-033X Series E-ISSN 2196-2812 作者: 王得到 時間: 2025-3-26 00:33
D. W. Christianson,W. N. Lipscomben-abled a greatly improved multi-level metallization integration approach. Once the technology was implemented into large scale manufacturing, both the hardware and the processes evolved by leaps and bounds. New processes were developed, with the second major application being tungsten polish.作者: 西瓜 時間: 2025-3-26 07:37 作者: 意見一致 時間: 2025-3-26 09:43
https://doi.org/10.1007/978-3-662-06234-0dielectrics; material; metals; reactions; semiconductor; semiconductor technology作者: Vulvodynia 時間: 2025-3-26 13:41
978-3-642-07738-8Springer-Verlag Berlin Heidelberg 2004作者: EPT 時間: 2025-3-26 18:52 作者: 自傳 時間: 2025-3-26 21:57
Springer Series in Materials Sciencehttp://image.papertrans.cn/c/image/224499.jpg作者: 我說不重要 時間: 2025-3-27 02:44 作者: 斷斷續(xù)續(xù) 時間: 2025-3-27 06:30 作者: arrogant 時間: 2025-3-27 10:00 作者: 調情 時間: 2025-3-27 14:32 作者: 抱怨 時間: 2025-3-27 20:49 作者: Graves’-disease 時間: 2025-3-27 23:16
Chemical-Mechanical Planarization of Semiconductor Materials作者: 散布 時間: 2025-3-28 04:39
Metal Polishing Processes,ade for interconnections between wires and the substrate and between the wires themselves. Indeed, in the case of complex devices such as microprocessors or sophisticated logic circuits, several layers of both horizontally and vertically interconnected damascene structures must be fabricated to form作者: COLIC 時間: 2025-3-28 06:29
Metal CMP Science,ediately oxidizes. The abrasion-passivation process is hypothesized to continue until a material that does not passivate and/or does not lend itself to mechanical abrasion (a stop layer) is reached. This mechanism requires that all tungsten removed be in an oxidized state.作者: Aggressive 時間: 2025-3-28 13:20
Equipment Used in CMP Processes,as enabled the use of CMP processes consistent with high volume manufacturing in a clean room environment. Going forward, automated process control for CMP will lead to further improvements in manufacturability, stability and predictive process results.作者: 拔出 時間: 2025-3-28 15:13 作者: Water-Brash 時間: 2025-3-28 19:27 作者: PURG 時間: 2025-3-28 23:18
Metal Polishing Processes,ects. However, within the context of modern microelectronics it is a much more narrowly defined technology that is invariably used to fabricate “damascene” structures. The origin of this terminology is obscure, however for integrated circuit fabrication damascene means microscopic, inlaid metal feat作者: dura-mater 時間: 2025-3-29 04:24 作者: 逃避現(xiàn)實 時間: 2025-3-29 09:06 作者: Maximize 時間: 2025-3-29 14:44
CMP Polishing Pads, manufacture of such devices, polishing is used to maintain planarity at each step in the process of depositing and photolithographically imaging sequential insulating dielectric and conductive metal layers. Also as noted in the first chapter, CMP is now also employed to remove a bulk film and then
