標(biāo)題: Titlebook: Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride; Roland Yingjie Tay Book 2018 Springer Na [打印本頁(yè)] 作者: FORAY 時(shí)間: 2025-3-21 18:00
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride影響因子(影響力)
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride影響因子(影響力)學(xué)科排名
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride網(wǎng)絡(luò)公開度
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride被引頻次
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride被引頻次學(xué)科排名
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride年度引用
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride年度引用學(xué)科排名
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride讀者反饋
書目名稱Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride讀者反饋學(xué)科排名
作者: 愛(ài)管閑事 時(shí)間: 2025-3-21 20:38
Progress in Precision Engineerings the most stable among the BN polymorphs, consisting of alternating boron (B) and nitrogen (N) atoms, covalently bonded in a honeycomb structure with a lattice constant of 2.504 ? Pease (Nature 165(4201):722–723, 1950) [.].作者: deficiency 時(shí)間: 2025-3-22 02:40
The Classification of Fistula-in-Anohness of?~0.1?nm) which is almost free from dangling bonds Dean et al. (Nat Nanotechnol 5(10):722–726, 2010) [.]. The lattice constant of h-BN is 2.504 ? and the interlayer distance is 0.333?nm. Besides being stable in the form of mono- to few-layer, many interesting and outstanding properties arise from this configuration.作者: 出生 時(shí)間: 2025-3-22 07:28
https://doi.org/10.1007/978-3-642-69163-8p 5, 13228, 2015, [.]) properties of the heterostructure 2D devices. To date, centimeter-scale synthesis of polycrystalline ultrathin continuous h-BN films by CVD on various transition metals have been attempted.作者: Judicious 時(shí)間: 2025-3-22 12:38
Synthesis of Two-Dimensional Hexagonal Boron Nitride,s the most stable among the BN polymorphs, consisting of alternating boron (B) and nitrogen (N) atoms, covalently bonded in a honeycomb structure with a lattice constant of 2.504 ? Pease (Nature 165(4201):722–723, 1950) [.].作者: –FER 時(shí)間: 2025-3-22 14:01
Literature Review,hness of?~0.1?nm) which is almost free from dangling bonds Dean et al. (Nat Nanotechnol 5(10):722–726, 2010) [.]. The lattice constant of h-BN is 2.504 ? and the interlayer distance is 0.333?nm. Besides being stable in the form of mono- to few-layer, many interesting and outstanding properties arise from this configuration.作者: –FER 時(shí)間: 2025-3-22 19:48 作者: climax 時(shí)間: 2025-3-23 01:00
https://doi.org/10.1007/978-3-642-70411-6 edges and hexagonal domains are rationalized with Wulff construction that has the minimum edge energy. This experimental evidence came as a breakthrough for many theoretical work which suggested that the single-crystal h-BN domains is only stable in the form of triangles.作者: majestic 時(shí)間: 2025-3-23 02:26
Conclusions and Recommendations for Future Work, edges and hexagonal domains are rationalized with Wulff construction that has the minimum edge energy. This experimental evidence came as a breakthrough for many theoretical work which suggested that the single-crystal h-BN domains is only stable in the form of triangles.作者: 下船 時(shí)間: 2025-3-23 06:33
Book 2018ns. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose..作者: Credence 時(shí)間: 2025-3-23 12:41
Book 2018ion (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can作者: AER 時(shí)間: 2025-3-23 13:54
Growth of Large Single Crystalline Monolayer Boron Nitride Hexagons,rolled nucleation resulting in the formation of nano-sized crystals. To obtain large-area high quality h-BN single crystals, metal catalytic substrates such as Cu and Ni are still required. It is observed that the h-BN domains tend to nucleate in the forms of triangular [.,.,.,.] or asymmetric diamond shape [.].作者: Torrid 時(shí)間: 2025-3-23 21:30 作者: 群居男女 時(shí)間: 2025-3-24 00:29 作者: 貪婪的人 時(shí)間: 2025-3-24 03:58
P. W. de Leeuw,W. H. Birkenh?gerrolled nucleation resulting in the formation of nano-sized crystals. To obtain large-area high quality h-BN single crystals, metal catalytic substrates such as Cu and Ni are still required. It is observed that the h-BN domains tend to nucleate in the forms of triangular [.,.,.,.] or asymmetric diamond shape [.].作者: LIKEN 時(shí)間: 2025-3-24 07:10
https://doi.org/10.1007/978-3-642-70411-6distances have been explored such as chemical vapor deposition (CVD) [.,.,.,.,.,.], surface segregation method or solid source diffusion [.,.,.,.], ion-beam sputtering deposition (IBSD) [.], pulsed-laser deposition (PLD) [., .], reactive magnetron sputtering [.] and molecular beam epitaxy (MBE) [.].作者: Ejaculate 時(shí)間: 2025-3-24 10:45
J. M. Garrigues,C. A. Bruere-DawsonAn APCVD system was chosen for this experiment due to several known advantages as compared to low pressure (LP) CVD such as much lower Cu evaporation rate Melmed (Surf Sci 5(1):166–169, 1966) [.], fewer resources consumption, simpler design setup which made it more cost-effective for transition to industries.作者: 糾纏,纏繞 時(shí)間: 2025-3-24 16:54 作者: Carminative 時(shí)間: 2025-3-24 20:59
https://doi.org/10.1007/978-981-10-8809-4Two-Dimensional Materials; Hexaganol Boron Nitride Nanosheets; Atmospheric pressure Chemical Vapor Dep作者: Inculcate 時(shí)間: 2025-3-25 03:14 作者: 枕墊 時(shí)間: 2025-3-25 03:58
Progress in Precision Engineering wurtzite (.), cubic (.) and turbostratic (.). In particular, hexagonal boron nitride (h-BN), which is also known as “white graphite”, is considered as the most stable among the BN polymorphs, consisting of alternating boron (B) and nitrogen (N) atoms, covalently bonded in a honeycomb structure with作者: chandel 時(shí)間: 2025-3-25 08:56 作者: 引起 時(shí)間: 2025-3-25 14:16 作者: brother 時(shí)間: 2025-3-25 18:10
https://doi.org/10.1007/978-3-642-69163-8(9):5804–5810, 2015, [.]), mechanical (Becton and Wang in Phys Chem Chem Phys 17(34), 21894–21901, 2015, [.]), and thermal (Mortazavi et al. in Sci Rep 5, 13228, 2015, [.]) properties of the heterostructure 2D devices. To date, centimeter-scale synthesis of polycrystalline ultrathin continuous h-BN 作者: 攀登 時(shí)間: 2025-3-25 22:32
https://doi.org/10.1007/978-3-642-70411-6distances have been explored such as chemical vapor deposition (CVD) [.,.,.,.,.,.], surface segregation method or solid source diffusion [.,.,.,.], ion-beam sputtering deposition (IBSD) [.], pulsed-laser deposition (PLD) [., .], reactive magnetron sputtering [.] and molecular beam epitaxy (MBE) [.].作者: 值得尊敬 時(shí)間: 2025-3-26 01:24
https://doi.org/10.1007/978-3-642-70411-6al CVD parameters such as substrate position, growth temperature, growth time and precursor conditions affect the nucleation density and the lateral size of the h-BN domains. The growth of large h-BN domains is also particularly sensitive towards the surface morphology of the Cu substrate. A highly 作者: antenna 時(shí)間: 2025-3-26 08:20
Roland Yingjie TayWinner of the best thesis award from Nanyang Technological University’s EEE (Electrical and Electronic Engineering) Department.Exhaustively reviews key recent research into the growth of a new type of作者: AXIOM 時(shí)間: 2025-3-26 11:09
Springer Theseshttp://image.papertrans.cn/c/image/224463.jpg作者: 癡呆 時(shí)間: 2025-3-26 12:48 作者: Graduated 時(shí)間: 2025-3-26 17:28 作者: 無(wú)法治愈 時(shí)間: 2025-3-26 21:09
Growth of Large Single Crystalline Monolayer Boron Nitride Hexagons,rolled nucleation resulting in the formation of nano-sized crystals. To obtain large-area high quality h-BN single crystals, metal catalytic substrates such as Cu and Ni are still required. It is observed that the h-BN domains tend to nucleate in the forms of triangular [.,.,.,.] or asymmetric diamo作者: narcissism 時(shí)間: 2025-3-27 03:30
Growth of Oriented Single Crystalline Hexagonal Boron Nitride Monolayers,(9):5804–5810, 2015, [.]), mechanical (Becton and Wang in Phys Chem Chem Phys 17(34), 21894–21901, 2015, [.]), and thermal (Mortazavi et al. in Sci Rep 5, 13228, 2015, [.]) properties of the heterostructure 2D devices. To date, centimeter-scale synthesis of polycrystalline ultrathin continuous h-BN 作者: 護(hù)身符 時(shí)間: 2025-3-27 09:00
A New Single-Source Precursor for Monolayer h-BN and h-BCN Thin Films,distances have been explored such as chemical vapor deposition (CVD) [.,.,.,.,.,.], surface segregation method or solid source diffusion [.,.,.,.], ion-beam sputtering deposition (IBSD) [.], pulsed-laser deposition (PLD) [., .], reactive magnetron sputtering [.] and molecular beam epitaxy (MBE) [.].作者: 老巫婆 時(shí)間: 2025-3-27 12:12
Conclusions and Recommendations for Future Work,al CVD parameters such as substrate position, growth temperature, growth time and precursor conditions affect the nucleation density and the lateral size of the h-BN domains. The growth of large h-BN domains is also particularly sensitive towards the surface morphology of the Cu substrate. A highly 作者: 門窗的側(cè)柱 時(shí)間: 2025-3-27 17:13 作者: 貞潔 時(shí)間: 2025-3-27 21:18
Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride作者: FECK 時(shí)間: 2025-3-28 00:55 作者: Feckless 時(shí)間: 2025-3-28 05:02
10樓作者: 沒(méi)有準(zhǔn)備 時(shí)間: 2025-3-28 06:15
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10樓作者: Melanocytes 時(shí)間: 2025-3-28 14:57
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