標題: Titlebook: Chemical Vapor Deposition; Thermal and Plasma D Srinivasan Sivaram Book 1995 Springer Science+Business Media New York 1995 chemistry.deposi [打印本頁] 作者: 清楚明確 時間: 2025-3-21 16:22
書目名稱Chemical Vapor Deposition影響因子(影響力)
書目名稱Chemical Vapor Deposition影響因子(影響力)學科排名
書目名稱Chemical Vapor Deposition網(wǎng)絡公開度
書目名稱Chemical Vapor Deposition網(wǎng)絡公開度學科排名
書目名稱Chemical Vapor Deposition被引頻次
書目名稱Chemical Vapor Deposition被引頻次學科排名
書目名稱Chemical Vapor Deposition年度引用
書目名稱Chemical Vapor Deposition年度引用學科排名
書目名稱Chemical Vapor Deposition讀者反饋
書目名稱Chemical Vapor Deposition讀者反饋學科排名
作者: Override 時間: 2025-3-22 00:14 作者: FUSE 時間: 2025-3-22 00:57
Manufacturability,process. It provides a framework to increase the efficiency with which processes can be made manufacturable. I believe this framework should be a prerequisite for all process/equipment engineers who hope to work in the microelectronic industry.作者: Coma704 時間: 2025-3-22 08:28
Chemical Equilibrium and Kinetics,. This reaction is usually endothermic and the energy needed for the forward progress of this reaction can come from many sources: thermal, electrical plasmas, photons, etc. The earliest and most common means of supplying energy to the CVD reaction is by heating the substrate and this technique is c作者: 殘暴 時間: 2025-3-22 12:36
Reactor Design for Thermal CVD,products. We will treat this subject with a narrower focus: thin films with desired properties from gaseous sources. Such a discussion may be insufficient for the design of a commercial reactor from first principles. However, for the modification of an existing reactor for the purpose of tailoring f作者: esthetician 時間: 2025-3-22 14:22 作者: esthetician 時間: 2025-3-22 19:27 作者: 慢跑 時間: 2025-3-23 00:34
CVD of Conductors,As device dimensions and film thicknesses scale down, thin film properties of conductors (see Chapter 2) begin to dominate and special processing conditions become necessary. For instance, it becomes essential to lower the processing temperature so as to minimize undesirable thermally activated proc作者: Painstaking 時間: 2025-3-23 04:16
CVD of Dielectrics,s are more varied when compared to the applications of conductors. Silicon-based integrated circuit technology owes its popularity in no small measure to the existence of a stable native dielectric, SiO.. SiO. is used as the gate oxide in MOS devices, where it dictates their performance. Dielectrics作者: Postulate 時間: 2025-3-23 06:59
CVD of Semiconductors,n theory, the growth of single-crystal thin films to match the substrate lattice, or epitaxy, is possible through most common methods of thin film deposition, such as evaporation, PVD, and CVD. However, CVD, liquid phase epitaxy and molecular beam epitaxy are the most commonly used methods of epitax作者: chiropractor 時間: 2025-3-23 10:15 作者: Guileless 時間: 2025-3-23 14:27 作者: 不理會 時間: 2025-3-23 21:12
978-1-4757-4753-9Springer Science+Business Media New York 1995作者: 巨碩 時間: 2025-3-24 02:14
X. Q. Yang,A. I. Mees,K. Campbellprocess. It provides a framework to increase the efficiency with which processes can be made manufacturable. I believe this framework should be a prerequisite for all process/equipment engineers who hope to work in the microelectronic industry.作者: Atheroma 時間: 2025-3-24 06:22 作者: GEM 時間: 2025-3-24 08:30 作者: 啟發(fā) 時間: 2025-3-24 14:08
Andrew Eberhard,Robin Hill,Barney M. Gloverme surface. The occurrence of a chemical reaction is central to this means of thin film growth, as is the requirement that the reactants must start out in the vapor phase. Ability to control the components of the gas phase, and the physical conditions of the gas phase, the solid surface, and the env作者: ODIUM 時間: 2025-3-24 15:26
Andrew Eberhard,Robin Hill,Barney M. Gloverth. Conditions during film growth affect many of the properties of thin films. The importance of early stages of thin film growth on the final film properties cannot be overemphasized. In this chapter, we describe the processes that occur during this stage of growth and correlate the growth conditio作者: 音樂會 時間: 2025-3-24 20:55 作者: 四海為家的人 時間: 2025-3-25 00:13 作者: mediocrity 時間: 2025-3-25 05:17
https://doi.org/10.1007/978-3-642-84115-6products. We will treat this subject with a narrower focus: thin films with desired properties from gaseous sources. Such a discussion may be insufficient for the design of a commercial reactor from first principles. However, for the modification of an existing reactor for the purpose of tailoring f作者: 祖先 時間: 2025-3-25 09:12
Polymer Degradation Studies by FTIR, interactions involving charged particles produced in a plasma have been effectively utilized in various CVD processes to reduce reaction temperatures. Figure 6.1 illustrates the familiar energy diagram for a reaction: reaction pathway X is the one we have previously considered in thermal CVD, where作者: 簡略 時間: 2025-3-25 13:36
https://doi.org/10.1007/978-3-7091-8375-5id we consider the proper confinement of the plasma and the reactants, or the optimization of the plasma in order to produce a solid film on the substrate. In this chapter we will address these issues and study the coupling of external power to the discharge for its generation and maintenance. We wi作者: 強化 時間: 2025-3-25 18:46
New Trends in Multiperipheral Dynamics,As device dimensions and film thicknesses scale down, thin film properties of conductors (see Chapter 2) begin to dominate and special processing conditions become necessary. For instance, it becomes essential to lower the processing temperature so as to minimize undesirable thermally activated proc作者: Iniquitous 時間: 2025-3-25 21:45
Recent Progress in Particle Physics,s are more varied when compared to the applications of conductors. Silicon-based integrated circuit technology owes its popularity in no small measure to the existence of a stable native dielectric, SiO.. SiO. is used as the gate oxide in MOS devices, where it dictates their performance. Dielectrics作者: conjunctivitis 時間: 2025-3-26 03:31
New Trends in Multiperipheral Dynamics,n theory, the growth of single-crystal thin films to match the substrate lattice, or epitaxy, is possible through most common methods of thin film deposition, such as evaporation, PVD, and CVD. However, CVD, liquid phase epitaxy and molecular beam epitaxy are the most commonly used methods of epitax作者: 合適 時間: 2025-3-26 05:59 作者: Nonporous 時間: 2025-3-26 11:46 作者: Jargon 時間: 2025-3-26 14:26 作者: 不適 時間: 2025-3-26 16:49
Book 1995text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the作者: collateral 時間: 2025-3-26 22:27 作者: 門窗的側柱 時間: 2025-3-27 04:53 作者: AVOW 時間: 2025-3-27 05:50 作者: 食草 時間: 2025-3-27 11:19 作者: preservative 時間: 2025-3-27 14:37
Andrew Eberhard,Robin Hill,Barney M. Glovert in the vapor phase. Ability to control the components of the gas phase, and the physical conditions of the gas phase, the solid surface, and the envelope that surrounds them determines our capability to control the properties of the thin films that are produced.作者: debase 時間: 2025-3-27 18:08 作者: 悶熱 時間: 2025-3-28 01:50 作者: tangle 時間: 2025-3-28 03:01
Recent Progress in Particle Physics, to the existence of a stable native dielectric, SiO.. SiO. is used as the gate oxide in MOS devices, where it dictates their performance. Dielectrics are used to isolate electrically active components, either semiconductors or conductors. And they are used as capacitors; they provide protection for the device from ambient impurities and moisture.作者: right-atrium 時間: 2025-3-28 07:02 作者: WAIL 時間: 2025-3-28 11:48 作者: 鉗子 時間: 2025-3-28 17:52 作者: hallow 時間: 2025-3-28 20:54
Reactor Design for Thermal CVD,ient for the design of a commercial reactor from first principles. However, for the modification of an existing reactor for the purpose of tailoring film properties or for the construction of laboratory prototypes, this discussion will be adequate.作者: Addictive 時間: 2025-3-29 01:59 作者: 最初 時間: 2025-3-29 06:19
CVD of Semiconductors,osition, such as evaporation, PVD, and CVD. However, CVD, liquid phase epitaxy and molecular beam epitaxy are the most commonly used methods of epitaxial thin film growth. In this chapter, we will examine the role of the chemistry, process conditions, and the reactor, that promote epitaxial growth of the semiconducting thin film.作者: 神經(jīng) 時間: 2025-3-29 10:12
Chemical Equilibrium and Kinetics,ommonly referred to as thermal CVD. We will begin our discussion of thermal CVD by concentrating on two constraints placed on the reaction by the economics of a manufacturing process: how much of the reactants are converted to products and how quickly this can be accomplished.作者: 神圣將軍 時間: 2025-3-29 13:00
Processing Plasmas and Reactors,ll use a simple DC diode plasma in order to illustrate electron production and loss mechanisms. However, since most useful CVD processes use AC power sources, we will also examine RF and microwave discharges.
