作者: Abutment 時(shí)間: 2025-3-21 21:52 作者: 神秘 時(shí)間: 2025-3-22 02:34
Introduction to NVM Devices,non and magnetic materials were some of the first materials having the hysteresis or the alternation between two different states depending on the magnetization direction, i.e., magnetic field up or down that is necessary for Boolean-logic devices.作者: 一條卷發(fā) 時(shí)間: 2025-3-22 04:39 作者: 網(wǎng)絡(luò)添麻煩 時(shí)間: 2025-3-22 12:17 作者: separate 時(shí)間: 2025-3-22 14:44
Book 2015of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced..作者: separate 時(shí)間: 2025-3-22 18:54
concepts for non-volatile memory devices.Focuses on conduct.This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved a作者: 托運(yùn) 時(shí)間: 2025-3-23 00:24 作者: verdict 時(shí)間: 2025-3-23 05:22 作者: FLIP 時(shí)間: 2025-3-23 09:27 作者: 懸崖 時(shí)間: 2025-3-23 10:19
3D NAND Flash Architectures,nd compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics. Now it even penetrates into the enterprise applications, and it is expected that NAND Flash will continue to enjoy a brilliant market growth in the near future.作者: 殺死 時(shí)間: 2025-3-23 16:24 作者: entreat 時(shí)間: 2025-3-23 18:59 作者: glans-penis 時(shí)間: 2025-3-24 01:13 作者: 英寸 時(shí)間: 2025-3-24 06:14
Studies of Landmark Location Uncertainty,ories, while for the CT memories charge storage takes place in localized traps within a dielectric layer (typically made of silicon nitride). As recalled in Sect. 3.2 of this chapter, the CT memories have been the focus of intense research and product development since the early demonstration of MNO作者: Enteropathic 時(shí)間: 2025-3-24 08:14
Studies of Landmark Location Uncertainty,r structure with metal or semiconductor nanoparticles or nanoparticle/polymer composites embedded in the single polymer layer. Several mechanisms have been proposed for the resistive switches, including the electric-field induced charge transfer between nanoparticles and another component, the charg作者: 縮減了 時(shí)間: 2025-3-24 14:05 作者: AVERT 時(shí)間: 2025-3-24 14:52 作者: Bridle 時(shí)間: 2025-3-24 19:32
Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles,r structure with metal or semiconductor nanoparticles or nanoparticle/polymer composites embedded in the single polymer layer. Several mechanisms have been proposed for the resistive switches, including the electric-field induced charge transfer between nanoparticles and another component, the charg作者: 口味 時(shí)間: 2025-3-25 00:06 作者: 兒童 時(shí)間: 2025-3-25 07:08 作者: Ingrained 時(shí)間: 2025-3-25 10:12 作者: 座右銘 時(shí)間: 2025-3-25 13:26 作者: 裝入膠囊 時(shí)間: 2025-3-25 19:47 作者: 使高興 時(shí)間: 2025-3-26 00:01
Studies of Landmark Location Uncertainty,ories are required as the key units of flexible electronic systems that are regarded as the next-generation electronic systems. Two-terminal organic devices embedded with metal or semiconductor nanoparticles can exhibit resistive switches and stability in different resistance states. This electrical作者: Peak-Bone-Mass 時(shí)間: 2025-3-26 02:24
Panagiotis DimitrakisProvides a comprehensive overview of the technology for charge-trapping non-volatile memories.Details new architectures and current modeling concepts for non-volatile memory devices.Focuses on conduct作者: 載貨清單 時(shí)間: 2025-3-26 05:52
http://image.papertrans.cn/c/image/224073.jpg作者: 埋葬 時(shí)間: 2025-3-26 09:37
3D NAND Flash Architectures,nd compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics. Now it even penetrates into the enterprise applications, and it is expected that NAND Flash will continue to enjoy a brilliant market growth in the near future.作者: set598 時(shí)間: 2025-3-26 13:21
Book 2015of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced..作者: 含鐵 時(shí)間: 2025-3-26 18:29
Physics of Digital Image Formation,nd compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics. Now it even penetrates into the enterprise applications, and it is expected that NAND Flash will continue to enjoy a brilliant market growth in the near future.作者: 責(zé)怪 時(shí)間: 2025-3-26 21:21 作者: 不如樂(lè)死去 時(shí)間: 2025-3-27 04:14 作者: 廢墟 時(shí)間: 2025-3-27 05:51
9樓作者: BABY 時(shí)間: 2025-3-27 11:57
10樓作者: PLE 時(shí)間: 2025-3-27 13:53
10樓作者: 殺蟲(chóng)劑 時(shí)間: 2025-3-27 19:08
10樓作者: 拍下盜公款 時(shí)間: 2025-3-27 23:49
10樓
