標(biāo)題: Titlebook: Charge-Trapping Non-Volatile Memories; Volume 2--Emerging M Panagiotis Dimitrakis Book 2017 Springer International Publishing AG 2017 3D No [打印本頁] 作者: 建筑物的正面 時(shí)間: 2025-3-21 19:55
書目名稱Charge-Trapping Non-Volatile Memories影響因子(影響力)
作者: 責(zé)問 時(shí)間: 2025-3-21 23:01 作者: saturated-fat 時(shí)間: 2025-3-22 04:22
Hybrid Memories Based on Redox Molecules,stable, with well-defined energy levels, capable of combining chemically to form larger composites with desired properties, capable of self-assembling in dense nanostructures on surfaces and the energy required for their manipulation and during device operation is much less compared to solid-state s作者: savage 時(shí)間: 2025-3-22 05:07
Organic Floating Gate Memory Structures,igher storage capacities. The new applications and devices in the market such as high definition TVs, iPADs, iPODs, Kindles, MP3s and smart phones operate through the storage of large amounts of data. Most of these devices are portable for everyday use for communication or entertainment purposes.作者: FOLLY 時(shí)間: 2025-3-22 10:44 作者: GIST 時(shí)間: 2025-3-22 15:42 作者: GIST 時(shí)間: 2025-3-22 20:38
Organic Floating Gate Memory Structures,igher storage capacities. The new applications and devices in the market such as high definition TVs, iPADs, iPODs, Kindles, MP3s and smart phones operate through the storage of large amounts of data. Most of these devices are portable for everyday use for communication or entertainment purposes.作者: 精密 時(shí)間: 2025-3-23 00:00
Panagiotis DimitrakisProvides a comprehensive overview of the technology for charge-trapping non-volatile memories.Details new architectures and current modeling concepts for non-volatile memory devices.Focuses on conduct作者: Misgiving 時(shí)間: 2025-3-23 05:14 作者: inhumane 時(shí)間: 2025-3-23 09:33
https://doi.org/10.1007/978-3-319-48705-23D Non-volatile Memories; Charge-trapping Layer; Charge-trapping Memories; Flash Memories; MAHOS; MANOS; M作者: GROUP 時(shí)間: 2025-3-23 13:12 作者: 意見一致 時(shí)間: 2025-3-23 16:18
On Avoidance Activities After Accidents, nanomaterials is presented. Then, the current status of nanomaterials used for memory storage devices is reviewed. Vapour–liquid–solid method is described in details as the most common techniques to fabricate silicon nanostructures. In addition, a brief discussion on various metals for the role of the catalyst material is provided.作者: acrobat 時(shí)間: 2025-3-23 19:25
https://doi.org/10.1007/978-3-8349-8127-1igher storage capacities. The new applications and devices in the market such as high definition TVs, iPADs, iPODs, Kindles, MP3s and smart phones operate through the storage of large amounts of data. Most of these devices are portable for everyday use for communication or entertainment purposes.作者: 地名詞典 時(shí)間: 2025-3-23 22:26
Precaution Incentives in Accident Settings widely used class of non-volatile memories today. Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) stack as the non-volatile memory gate stack has been the focus since the 1990s. Several enhancements in SONOS layer materials have been invented to reduce the programming voltage and improve the reliabilit作者: 抱狗不敢前 時(shí)間: 2025-3-24 03:16
On Avoidance Activities After Accidents, nanomaterials is presented. Then, the current status of nanomaterials used for memory storage devices is reviewed. Vapour–liquid–solid method is described in details as the most common techniques to fabricate silicon nanostructures. In addition, a brief discussion on various metals for the role of 作者: LAY 時(shí)間: 2025-3-24 09:00
Precaution Incentives in Accident Settingsstable, with well-defined energy levels, capable of combining chemically to form larger composites with desired properties, capable of self-assembling in dense nanostructures on surfaces and the energy required for their manipulation and during device operation is much less compared to solid-state s作者: Endearing 時(shí)間: 2025-3-24 13:31
https://doi.org/10.1007/978-3-8349-8127-1igher storage capacities. The new applications and devices in the market such as high definition TVs, iPADs, iPODs, Kindles, MP3s and smart phones operate through the storage of large amounts of data. Most of these devices are portable for everyday use for communication or entertainment purposes.作者: BOGUS 時(shí)間: 2025-3-24 17:31
https://doi.org/10.1007/978-3-8349-8127-1is work the focus is to present results concerning the use of NPs deposited using a novel room temperature cluster beam technique and show their applications in an emerging non-volatile memory (NVM) technology which represents an evolution of the standard floating gate NVM (which is the building blo作者: Dawdle 時(shí)間: 2025-3-24 19:13 作者: 肥料 時(shí)間: 2025-3-24 23:39
ve overview of the technology for charge-trapping non-volatile memories;.Details new architectures and current modeling concepts for non-volatile memory devices;.Focuses on conduction through multi-layer gate dielectrics stacks..978-3-319-83999-8978-3-319-48705-2作者: 尖 時(shí)間: 2025-3-25 05:21 作者: debunk 時(shí)間: 2025-3-25 08:51 作者: 思想 時(shí)間: 2025-3-25 15:35
Precaution Incentives in Accident Settings in dense nanostructures on surfaces and the energy required for their manipulation and during device operation is much less compared to solid-state semiconductor device.. Furthermore if the target of scaling down a specific logic operation in one molecule is achieved, current miniaturization limits will be surpassed.作者: SPALL 時(shí)間: 2025-3-25 18:18
Hybrid Memories Based on Redox Molecules, in dense nanostructures on surfaces and the energy required for their manipulation and during device operation is much less compared to solid-state semiconductor device.. Furthermore if the target of scaling down a specific logic operation in one molecule is achieved, current miniaturization limits will be surpassed.作者: Chivalrous 時(shí)間: 2025-3-25 23:07
Precaution Incentives in Accident Settingsrformance, reliability and low cost of manufacture. Topics that will be covered include various improvements in the ONO stack such as Band gap engineering, High K-Metal Gate for SONOS, SONOS FinFETs and embedded SONOS.作者: 碎片 時(shí)間: 2025-3-26 01:30 作者: Immunoglobulin 時(shí)間: 2025-3-26 06:29 作者: Stress-Fracture 時(shí)間: 2025-3-26 11:06 作者: meretricious 時(shí)間: 2025-3-26 13:17
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