標(biāo)題: Titlebook: Channel and Source Coding for Non-Volatile Flash Memories; Mohammed Rajab Book 2020 The Editor(s) (if applicable) and The Author(s), under [打印本頁] 作者: 揭發(fā) 時(shí)間: 2025-3-21 18:40
書目名稱Channel and Source Coding for Non-Volatile Flash Memories影響因子(影響力)
書目名稱Channel and Source Coding for Non-Volatile Flash Memories影響因子(影響力)學(xué)科排名
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書目名稱Channel and Source Coding for Non-Volatile Flash Memories網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Channel and Source Coding for Non-Volatile Flash Memories被引頻次
書目名稱Channel and Source Coding for Non-Volatile Flash Memories被引頻次學(xué)科排名
書目名稱Channel and Source Coding for Non-Volatile Flash Memories年度引用
書目名稱Channel and Source Coding for Non-Volatile Flash Memories年度引用學(xué)科排名
書目名稱Channel and Source Coding for Non-Volatile Flash Memories讀者反饋
書目名稱Channel and Source Coding for Non-Volatile Flash Memories讀者反饋學(xué)科排名
作者: Arthropathy 時(shí)間: 2025-3-21 20:53
Book 2020eliability of the NAND flash memory with low implementation costs for industrial application. The author examines different ECC schemes based on concatenated codes like generalized concatenated codes (GCC) which are applicable for NAND flash memories by using the hard and soft input decoding. Furthe作者: 偽善 時(shí)間: 2025-3-22 01:03
2661-8087 e for NAND flash memories by using the hard and soft input decoding. Furthermore, different data compression schemes are examined in order to reduce the write amplification effect and also to improve the error correct capability of the ECC by combining both schemes..978-3-658-28981-2978-3-658-28982-9Series ISSN 2661-8087 Series E-ISSN 2661-8095 作者: 后來 時(shí)間: 2025-3-22 08:02
Book 2020tenated codes like generalized concatenated codes (GCC) which are applicable for NAND flash memories by using the hard and soft input decoding. Furthermore, different data compression schemes are examined in order to reduce the write amplification effect and also to improve the error correct capability of the ECC by combining both schemes..作者: Subdue 時(shí)間: 2025-3-22 09:35 作者: Keratin 時(shí)間: 2025-3-22 16:00 作者: Keratin 時(shí)間: 2025-3-22 20:42 作者: 悶熱 時(shí)間: 2025-3-22 21:13
https://doi.org/10.1007/978-3-658-28982-9Channel Coding; Source Coding; Non-Volatile Flash Memories; NAND flash memory; Data compression; Signal p作者: debble 時(shí)間: 2025-3-23 03:53 作者: 吼叫 時(shí)間: 2025-3-23 08:17
Mohammed RajabStudy in Data Compression and Error Correction for Flash Memories作者: 鞭打 時(shí)間: 2025-3-23 12:27
Schriftenreihe der Institute für Systemdynamik (ISD) und optische Systeme (IOS)http://image.papertrans.cn/c/image/223849.jpg作者: 天氣 時(shí)間: 2025-3-23 17:09 作者: 笨重 時(shí)間: 2025-3-23 18:10 作者: 吞吞吐吐 時(shí)間: 2025-3-24 01:04
https://doi.org/10.1007/978-94-010-2185-2The introduction of MLC and TLC technologies reduced the reliability of flash memories significantly compared with SLC flash [65, 5]. With MLC and TLC flash cells the error probability varies for the different states. Hence asymmetric models are required to characterize the flash channel, e.g. the binary asymmetric channel (BAC) [66, 20, 21, 8].作者: 擦掉 時(shí)間: 2025-3-24 04:01
Ion-Binding Phenomena of Polyelectrolytes,In recent years, mostly hard-input algebraic decoding was used for error correction in flash memories [137, 94, 72]. ECC based on soft-input decoding can significantly improve the reliability of flash memories.作者: EXUDE 時(shí)間: 2025-3-24 07:52
Polyelectrolytes and NanoparticlesThis dissertation has proposed various applicable techniques to improve the reliability of NAND flash memory. In summary, this dissertation makes the following contributions.作者: Mortar 時(shí)間: 2025-3-24 12:18 作者: 難管 時(shí)間: 2025-3-24 15:22 作者: 起來了 時(shí)間: 2025-3-24 22:47 作者: cutlery 時(shí)間: 2025-3-25 00:14 作者: anthesis 時(shí)間: 2025-3-25 07:07 作者: 傳染 時(shí)間: 2025-3-25 10:27
P. E. Schoen,P. Yager,R. G. Priestensity, low-latency, fast-programming and erase operation speeds at low costs. Flash memories are mechanical shock-resistant non-volatile memories. Therefore, flash memories are very interesting for many devices that require high data reliability, e.g. for industrial robotics, scientific and medical作者: 其他 時(shí)間: 2025-3-25 11:38
L. Ter-Minassian-Saraga,S. J. Abitbouls used as channel model for flash memories and BCH codes are used for error correction [94, 72]. Recently, different concatenated coding schemes were proposed that have low error correcting capabilities.作者: 名次后綴 時(shí)間: 2025-3-25 16:20
Introduction,ensity, low-latency, fast-programming and erase operation speeds at low costs. Flash memories are mechanical shock-resistant non-volatile memories. Therefore, flash memories are very interesting for many devices that require high data reliability, e.g. for industrial robotics, scientific and medical instrumentation.作者: coagulation 時(shí)間: 2025-3-25 20:48
Product codes and generalized concatenated codes for flash memories,s used as channel model for flash memories and BCH codes are used for error correction [94, 72]. Recently, different concatenated coding schemes were proposed that have low error correcting capabilities.作者: 驚惶 時(shí)間: 2025-3-26 02:58 作者: 鞭打 時(shí)間: 2025-3-26 04:24
P. E. Schoen,P. Yager,R. G. Priestensity, low-latency, fast-programming and erase operation speeds at low costs. Flash memories are mechanical shock-resistant non-volatile memories. Therefore, flash memories are very interesting for many devices that require high data reliability, e.g. for industrial robotics, scientific and medical instrumentation.作者: 討厭 時(shí)間: 2025-3-26 08:44
L. Ter-Minassian-Saraga,S. J. Abitbouls used as channel model for flash memories and BCH codes are used for error correction [94, 72]. Recently, different concatenated coding schemes were proposed that have low error correcting capabilities.作者: Precursor 時(shí)間: 2025-3-26 12:39
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