作者: 怎樣才咆哮 時(shí)間: 2025-3-21 21:56 作者: 冥想后 時(shí)間: 2025-3-22 03:59
http://image.papertrans.cn/c/image/220369.jpg作者: PATRI 時(shí)間: 2025-3-22 07:51 作者: 關(guān)心 時(shí)間: 2025-3-22 10:51 作者: decode 時(shí)間: 2025-3-22 16:01 作者: decode 時(shí)間: 2025-3-22 20:57 作者: Rinne-Test 時(shí)間: 2025-3-23 00:08 作者: subordinate 時(shí)間: 2025-3-23 05:13
H. V. Grushevskaya,G. G. Krylovo bulk CMOS devices, SOI CMOS devices have been reknown for their superior performance in smaller second order effects, no latchup, and higher speed. Due to their unique structure, SOI CMOS devices have performance quite different from the bulk ones. In this chapter, fundamental behaviors of SOI CMO作者: insincerity 時(shí)間: 2025-3-23 06:21
Sofiane El-Kirat-Chatel,Audrey Beaussarthe buried oxide isolation structure, accumulation-mode devices are also important. In this chapter, first, the DC and the capacitance models for the accumulation-mode SOI MOS devices are presented. Recently, the trends on the fully-depleted SOI CMOS devices are toward using very thin silicon thin-fi作者: 有權(quán)威 時(shí)間: 2025-3-23 10:25 作者: DRAFT 時(shí)間: 2025-3-23 16:25
P. P. Simeonova,N. Opopol,M. I. Luster devices, are vertical SOI transistors. In the beginning of this chapter, DELTAs are presented. In order to improve the surface-scattering mobility of SOI PMOS devices, SiGe-channel SOI PMOS devices were reported. The SiGe-channel is assuming the concept from the heterojunction bipolar transistors (作者: FRAUD 時(shí)間: 2025-3-23 19:55 作者: 媒介 時(shí)間: 2025-3-24 02:02
H. V. Grushevskaya,G. G. Krylovntroduced. Then, a 0.25.m SOI CMOS fabrication processing sequence is described, followed by major SOI CMOS device structures. In the final portion of this chapter, special-purpose SOI technologies including DRAM, BiCMOS, and power are described.作者: 十字架 時(shí)間: 2025-3-24 02:36 作者: Heart-Attack 時(shí)間: 2025-3-24 08:28 作者: 胰臟 時(shí)間: 2025-3-24 11:57 作者: 招致 時(shí)間: 2025-3-24 17:06
Book 1998ed oxide structure, SOI technology offers superiorCMOS devices with higher speed, high density, and reduced second ordereffects for deep-submicron low-voltage, low-power VLSI circuitsapplications. In addition to VLSI applications, and because of itsoutstanding properties, SOI technology has been use作者: 前面 時(shí)間: 2025-3-24 19:59
E. D. Kuempel,C. L. Geraci,P. A. SchulteStarting from the basic concepts of the SPICE program, analytical device models of deep-submicron fully-depleted SOI CMOS devices used in ST-SPICE for CAD of VLSI circuits are explained. In the final portion of this section, usage of the ST-SPICE CAD program for analyzing the steady state and transient behaviors of SOI CMOS circuits is presented.作者: conflate 時(shí)間: 2025-3-24 23:14 作者: 打折 時(shí)間: 2025-3-25 05:12
Introduction,, the advantages of the SOI CMOS technology are described. The applications of SOI CMOS technology for realizing VLSI digital circuits are introduced. The objectives of this book in terms of processing technology, device modeling, and circuit designs for SOI CMOS VLSI are outlined.作者: 軌道 時(shí)間: 2025-3-25 07:37 作者: 貪婪的人 時(shí)間: 2025-3-25 15:19 作者: palette 時(shí)間: 2025-3-25 18:55 作者: 懦夫 時(shí)間: 2025-3-25 22:24
,SOI CMOS Devices—Advanced,he buried oxide isolation structure, accumulation-mode devices are also important. In this chapter, first, the DC and the capacitance models for the accumulation-mode SOI MOS devices are presented. Recently, the trends on the fully-depleted SOI CMOS devices are toward using very thin silicon thin-fi作者: 漸強(qiáng) 時(shí)間: 2025-3-26 01:11
SOI-Technology ST-SPICE,I circuits using SOI CMOS technology have been reported increasingly. Since the performance of SOI CMOS devices is quite different from that of the bulk ones, SOI VLSI circuits have demonstrated unique phenomena as described in Chapter 3. When designing SOI VLSI circuits, the SPICE CAD program desig作者: 誘騙 時(shí)間: 2025-3-26 06:24 作者: 推測(cè) 時(shí)間: 2025-3-26 10:09
H. V. Grushevskaya,G. G. Krylovmobilities in SOI CMOS devices are complicated especially for small-geometry SOI CMOS devices. In a short-channel SOI CMOS device, the internal electric field may be high. As a result, carriers in the channel may be traveling with a large energy. Therefore, carrier temperature may be much higher tha作者: 使厭惡 時(shí)間: 2025-3-26 12:54 作者: Granular 時(shí)間: 2025-3-26 19:52
P. P. Simeonova,N. Opopol,M. I. Lustervices are described. Recently, SOI technology has also been used to integrate BiCMOS devices. SOI MESFET and JFETs have also been created. In addition, single-electron transistors (SET) built on SOI SIMOX substrates have been realized. Amorphous and polysilicon thin-film transistors built on insulat作者: Instinctive 時(shí)間: 2025-3-26 23:35
,SOI CMOS Devices—Basic,mobilities in SOI CMOS devices are complicated especially for small-geometry SOI CMOS devices. In a short-channel SOI CMOS device, the internal electric field may be high. As a result, carriers in the channel may be traveling with a large energy. Therefore, carrier temperature may be much higher tha作者: 助記 時(shí)間: 2025-3-27 02:53 作者: 脊椎動(dòng)物 時(shí)間: 2025-3-27 06:04
Special-Purpose SOI,vices are described. Recently, SOI technology has also been used to integrate BiCMOS devices. SOI MESFET and JFETs have also been created. In addition, single-electron transistors (SET) built on SOI SIMOX substrates have been realized. Amorphous and polysilicon thin-film transistors built on insulat作者: instate 時(shí)間: 2025-3-27 11:45
Book 1998resented, followed by a CAD program, ST-SPICE, whichincorporates models for deep-submicron fully-depleted mesa-isolatedSOI CMOS devices and special purpose SOI devices including polysiliconTFTs. ..CMOS VLSI Engineering: Silicon-On-Insulator. is written forundergraduate senior students and first-year作者: Common-Migraine 時(shí)間: 2025-3-27 17:25 作者: 廣口瓶 時(shí)間: 2025-3-27 20:44
9樓作者: Fulminate 時(shí)間: 2025-3-28 00:18
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10樓
