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標(biāo)題: Titlebook: CMOS RF Circuit Design for Reliability and Variability; Jiann-Shiun Yuan Book 2016 The Author(s) 2016 Device Reliaiblity.Hot Electron Effe [打印本頁]

作者: concord 時間: 2025-3-21 18:01
書目名稱CMOS RF Circuit Design for Reliability and Variability影響因子(影響力)

書目名稱CMOS RF Circuit Design for Reliability and Variability影響因子(影響力)學(xué)科排名

書目名稱CMOS RF Circuit Design for Reliability and Variability網(wǎng)絡(luò)公開度

書目名稱CMOS RF Circuit Design for Reliability and Variability網(wǎng)絡(luò)公開度學(xué)科排名

書目名稱CMOS RF Circuit Design for Reliability and Variability被引頻次

書目名稱CMOS RF Circuit Design for Reliability and Variability被引頻次學(xué)科排名

書目名稱CMOS RF Circuit Design for Reliability and Variability年度引用

書目名稱CMOS RF Circuit Design for Reliability and Variability年度引用學(xué)科排名

書目名稱CMOS RF Circuit Design for Reliability and Variability讀者反饋

書目名稱CMOS RF Circuit Design for Reliability and Variability讀者反饋學(xué)科排名

作者: packet 時間: 2025-3-21 21:18
Book 2016 circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical e

作者: 根除 時間: 2025-3-22 00:54

作者: narcotic 時間: 2025-3-22 06:07

作者: 敵手 時間: 2025-3-22 12:28
https://doi.org/10.1007/b137366ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process var

作者: GENUS 時間: 2025-3-22 15:48
CMOS RF Circuit Design for Reliability and Variability978-981-10-0884-9Series ISSN 2191-530X Series E-ISSN 2191-5318

作者: GENUS 時間: 2025-3-22 20:49
https://doi.org/10.1007/b137366ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process variation effect on VCO performance fluctuation.

作者: 專心 時間: 2025-3-22 22:06
Oscillator Design for Variability,ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process variation effect on VCO performance fluctuation.

作者: 多樣 時間: 2025-3-23 03:06
Jiann-Shiun YuanFirst book to address the effect of device reliability and process variations on the RF circuit performance degradations.Present of all kinds RF circuits in the reliability examination.Includes analyt

作者: FEIGN 時間: 2025-3-23 07:54
SpringerBriefs in Applied Sciences and Technologyhttp://image.papertrans.cn/c/image/220362.jpg

作者: jumble 時間: 2025-3-23 13:15

作者: ARM 時間: 2025-3-23 17:41

作者: obsession 時間: 2025-3-23 20:48

作者: Bucket 時間: 2025-3-24 00:17
Lalita Ledwani,Jitendra S. SangwaiThis chapter talks about low-noise amplifier performance degradation subjected to hot electron effect. In addition to physical explantions, analytical equations and experimental data are provided.

作者: Adj異類的 時間: 2025-3-24 05:11

作者: geriatrician 時間: 2025-3-24 07:55
Conclusions and Future Research Needs,This chapter talks about the LC oscillator reliability subjected to electrical stress. Mixed-mode device and circuit simulation results as well as experimental data of voltage-controlled LC oscillators are presented.

作者: AMEND 時間: 2025-3-24 10:45
https://doi.org/10.1007/b137366This chapter talks about millimeter-wave mixer reliability subjected to electrical stress. Transistor stress data in additional to mixer performance before and after stress are provided.

作者: Seminar 時間: 2025-3-24 18:08

作者: laparoscopy 時間: 2025-3-24 21:04
https://doi.org/10.1007/b137366This chapter discusses the process variation effect on power amplifier performance. Extensive analytical equations are derived. The adaptive body bias technique to reduce the process variation effect on the power amplifier performance variation is presented.

作者: 雪崩 時間: 2025-3-24 23:40
Nanotechnology for Environmental RemediationThis chapter discusses the process variation effect on the mixer performance. Analytical equations are dervied to provide the theoretical insight. Monte Carlo simulation results are shown to demonstrate the statistical variation. The substrate bias technique helps reduce the process variation effect on the mixer performance fluctuation.

作者: adipose-tissue 時間: 2025-3-25 07:01

作者: 無關(guān)緊要 時間: 2025-3-25 09:50
CMOS Transistor Reliability and Variability Mechanisms,This chapter talks about device reliability mechanisms such as hot electron injection, gate oxide breakdown, negative bias temperature instability and process variation.

作者: 方便 時間: 2025-3-25 11:46

作者: flaggy 時間: 2025-3-25 16:20
Power Amplifier Reliability,This chapter talks about power amplifier reliability subjected to voltage stress and thermal effect. Both class AB and class E power amplfiiers are discussed. In addition, the class E power amplifier is fabricated using 0.18 micron CMOS process and experimental data of power amplifier performance before and after stress are presented.

作者: 必死 時間: 2025-3-25 20:28
Voltage-Controlled Oscillator Reliability,This chapter talks about the LC oscillator reliability subjected to electrical stress. Mixed-mode device and circuit simulation results as well as experimental data of voltage-controlled LC oscillators are presented.

作者: 鋼筆尖 時間: 2025-3-26 04:13
Mixer Reliability,This chapter talks about millimeter-wave mixer reliability subjected to electrical stress. Transistor stress data in additional to mixer performance before and after stress are provided.

作者: EVEN 時間: 2025-3-26 08:06