標(biāo)題: Titlebook: Atomic Layer Deposition for Semiconductors; Choel Seong Hwang Book 2014 Springer Science+Business Media New York 2014 ALD for mass-product [打印本頁(yè)] 作者: Ensign 時(shí)間: 2025-3-21 20:07
書(shū)目名稱Atomic Layer Deposition for Semiconductors影響因子(影響力)
書(shū)目名稱Atomic Layer Deposition for Semiconductors影響因子(影響力)學(xué)科排名
書(shū)目名稱Atomic Layer Deposition for Semiconductors網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Atomic Layer Deposition for Semiconductors網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Atomic Layer Deposition for Semiconductors被引頻次
書(shū)目名稱Atomic Layer Deposition for Semiconductors被引頻次學(xué)科排名
書(shū)目名稱Atomic Layer Deposition for Semiconductors年度引用
書(shū)目名稱Atomic Layer Deposition for Semiconductors年度引用學(xué)科排名
書(shū)目名稱Atomic Layer Deposition for Semiconductors讀者反饋
書(shū)目名稱Atomic Layer Deposition for Semiconductors讀者反饋學(xué)科排名
作者: 痛苦一生 時(shí)間: 2025-3-21 20:56 作者: 沒(méi)有希望 時(shí)間: 2025-3-22 00:36 作者: 慢慢沖刷 時(shí)間: 2025-3-22 05:36 作者: vocation 時(shí)間: 2025-3-22 12:22
Erratum to: Atomic Layer Deposition for Semiconductors,作者: dominant 時(shí)間: 2025-3-22 15:22 作者: Resection 時(shí)間: 2025-3-22 17:10
https://doi.org/10.1007/978-3-030-04729-0, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.作者: prodrome 時(shí)間: 2025-3-23 00:46 作者: nonchalance 時(shí)間: 2025-3-23 04:02
The Militaristic Discourse of Anti-feminism,entional Si substrate, which is also discussed. Finally, various state-of-the-art devices with ALD high-k film such as Ge and III–Vs-based metal–oxide–semiconductor field effect transistors (MOSFETs) and three-dimensional MOSFETs are introduced, and their reliability characteristics are discussed.作者: Texture 時(shí)間: 2025-3-23 08:59 作者: CARK 時(shí)間: 2025-3-23 11:11 作者: 敏捷 時(shí)間: 2025-3-23 16:08
Back End of the Lineor Cu metallization, very thin and conformal deposition of diffusion barrier and seed layer is essential for good gap fill by electroplating. In this chapter, we will review the efforts on the application of ALD at BEOL process; including contact/plug formation and metallization.作者: 星星 時(shí)間: 2025-3-23 20:42 作者: 敵意 時(shí)間: 2025-3-23 23:10 作者: 地名詞典 時(shí)間: 2025-3-24 02:48 作者: Predigest 時(shí)間: 2025-3-24 08:03 作者: 模仿 時(shí)間: 2025-3-24 14:03
ALD Simulationsultiscale simulations of gas flow are used to investigate conformality in high aspect ratio features and uniformity of growth within a reactor. The most popular subject for modeling is the ALD of oxides and nitrides, particularly the high-. dielectrics HfO., ZrO., and Al.O., due to their importance in semiconductor processing.作者: 名詞 時(shí)間: 2025-3-24 18:54
Introduction, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.作者: 火花 時(shí)間: 2025-3-24 19:29
ALD Precursors and Reaction Mechanisms, sulfides, selenides and tellurides of some elements, and phosphides, arsenides, carbides, and fluorides of few elements. The mechanisms of ALD reactions involve the transfer of atoms between precursor vapors and surfaces. The transferred atoms are either hydrogen, oxygen, fluorine, or chlorine.作者: 頂點(diǎn) 時(shí)間: 2025-3-25 00:26 作者: bypass 時(shí)間: 2025-3-25 06:40 作者: calorie 時(shí)間: 2025-3-25 08:22
Introduction ALD precursors are now known for most non-radioactive elements and many of them are commercially available. This review describes their chemical types, typical properties, and reactivity. Suitable pairs of precursors can deposit some pure elements, oxides of most elements, nitrides of many elements作者: LIMN 時(shí)間: 2025-3-25 11:44
ALD Precursors and Reaction Mechanisms ALD precursors are now known for most non-radioactive elements and many of them are commercially available. This review describes their chemical types, typical properties, and reactivity. Suitable pairs of precursors can deposit some pure elements, oxides of most elements, nitrides of many elements作者: CAMP 時(shí)間: 2025-3-25 15:57 作者: 熱心助人 時(shí)間: 2025-3-25 22:50
Mass-Production Memories (DRAM and Flash)puting in any computer requires two key information sets; programs, and the data to program with. Both sets are stored as a form of ‘bits’ in the core memory part of a computer. Any computed output that comes from these actions is also stored as a data set within different parts of the memories that作者: emulsify 時(shí)間: 2025-3-26 02:42 作者: 思考而得 時(shí)間: 2025-3-26 05:27
FeRAMost promising nonvolatile (NV) memory devices [., .]. Key parameters for the scaling of ferroelectric random access memories are shrinking of the feature size, reduction of operation voltage, and enhancement of voltage sensing. In this chapter, we will summarize several key technology issues which h作者: 帶來(lái) 時(shí)間: 2025-3-26 09:31
Front End of the Line Processand the interface properties with a substrate, which determines the performance and reliability of logic devices. In this chapter, we review the effect of the assorted metal precursors, such as HfCl., (HfN(CH.).)., Hf(N(C.H.)(CH.))., and HfO.Bu(NEtMe). on the various film properties, focusing on the作者: Virtues 時(shí)間: 2025-3-26 15:57
Back End of the Lined as a promising deposition technique, for sub-20?nm technology node logic device fabrication. Among various potential applications in logic device fabrication, the ability of ALD to deposit various metal and nitride films with high quality at low temperature makes it a viable deposition process for作者: Frenetic 時(shí)間: 2025-3-26 20:22 作者: keloid 時(shí)間: 2025-3-26 21:52
Mustafa Balkaya Ph.D.,Guven Catak Ph.D.tching capabilities was published [.] and variations of phase change memory cell designs were patented [.] by Ovshisky in the 1960s. Early phase change materials based on the Te–As–Si-Ge system, however, switched too slowly for a viable memory technology.作者: 圓木可阻礙 時(shí)間: 2025-3-27 03:17
https://doi.org/10.1007/978-1-4614-8054-9ALD for mass-production memories; ALD modeling; ALD simulations; Atomic Layer Deposition; Modern Semicon作者: Expertise 時(shí)間: 2025-3-27 06:17
978-1-4899-7943-8Springer Science+Business Media New York 2014作者: 繞著哥哥問(wèn) 時(shí)間: 2025-3-27 11:59
PCRAMtching capabilities was published [.] and variations of phase change memory cell designs were patented [.] by Ovshisky in the 1960s. Early phase change materials based on the Te–As–Si-Ge system, however, switched too slowly for a viable memory technology.作者: FIN 時(shí)間: 2025-3-27 17:33 作者: 拋射物 時(shí)間: 2025-3-27 18:13
https://doi.org/10.1007/978-3-030-04729-0 ALD precursors are now known for most non-radioactive elements and many of them are commercially available. This review describes their chemical types, typical properties, and reactivity. Suitable pairs of precursors can deposit some pure elements, oxides of most elements, nitrides of many elements作者: osteocytes 時(shí)間: 2025-3-27 23:34
https://doi.org/10.1007/978-3-030-04729-0, considering the elementary steps of precursor adsorption, ligand elimination, and film densification, as well as reactions with substrates (particularly Si and SiO.) and CVD-like decomposition reactions. Density functional theory (DFT) is the first principles method generally applied to these mech作者: PRISE 時(shí)間: 2025-3-28 02:14
Barbaros Bostan Ph.D.,Ozhan Tingoy Ph.D.puting in any computer requires two key information sets; programs, and the data to program with. Both sets are stored as a form of ‘bits’ in the core memory part of a computer. Any computed output that comes from these actions is also stored as a data set within different parts of the memories that作者: Banister 時(shí)間: 2025-3-28 06:29 作者: plasma 時(shí)間: 2025-3-28 14:09
Selcen Ozturkcan Ph.D.,Sercan Sengun M.A.ost promising nonvolatile (NV) memory devices [., .]. Key parameters for the scaling of ferroelectric random access memories are shrinking of the feature size, reduction of operation voltage, and enhancement of voltage sensing. In this chapter, we will summarize several key technology issues which h作者: 教育學(xué) 時(shí)間: 2025-3-28 18:22 作者: 鐵砧 時(shí)間: 2025-3-28 21:16 作者: 斗志 時(shí)間: 2025-3-29 01:34
Erfolg, Misserfolg und Comeback,ed for leading edge manufacturing is complex with stringent requirements on within-wafer and wafer-to-wafer nonuniformity of thickness, composition, and resistivity. In addition, particle defects, step coverage, and wafer throughput, as measured by number of wafers processed per hour, are also key c作者: 推崇 時(shí)間: 2025-3-29 07:07
Choel Seong HwangFirst book to connect missing link between semiconductor device engineers/designers and process engineers, material designers, and chemists.First book solely dedicated to the application of ALD to the作者: 偽造者 時(shí)間: 2025-3-29 08:00 作者: 同來(lái)核對(duì) 時(shí)間: 2025-3-29 13:30
