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標(biāo)題: Titlebook: Application of Particle and Laser Beams in Materials Technology; P. Misaelides Book 1995 Springer Science+Business Media Dordrecht 1995 Va [打印本頁(yè)]

作者: Opiate    時(shí)間: 2025-3-21 16:05
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作者: 叫喊    時(shí)間: 2025-3-21 22:46
Book 1995 in Materials Technology", which was held in Kallithea, Chalkidiki, in Northern Greece, from the 8th to the 21st of May, 1994 and attended by 73 participants from 21 countries. The aim of this ASI was to provide to the participants an overview of this rapidly expanding field. Fundamental aspects con
作者: Introduction    時(shí)間: 2025-3-22 01:59

作者: Graves’-disease    時(shí)間: 2025-3-22 06:23

作者: 女上癮    時(shí)間: 2025-3-22 09:39
Febrile Neutropenia: Management Issuesuctors by observing the surface-sensitive laser-induced photoluminescence from thin layers of InGaAs and GaAs ., during exposure of their surfaces to reactive gaseous species. We have observed the surface passivation to improve by as much as a factor of 6000 following an exposure of a few seconds to
作者: Inflamed    時(shí)間: 2025-3-22 14:41
Depth Profiling in Combination with Sputteringthe sample as well as on the bombardment parameters. Quite generally, the best depth resolution is achieved using low-energy primary ion beams and glancing angles of bombardment, but this is accomplished only at the expense of erosion rate and lateral resolution (due to reduced beam current and enla
作者: cajole    時(shí)間: 2025-3-22 21:04
Optical Spectrometry Coupled with Laser Ablation for Analytical Applications on Solidss are discussed, each making use of a particular phase of the laser ablation process: in LA-OES, that is Optical Emission Spectroscopy, the direct emission of the produced plasma is analysed; in LA-LIF, transitions of the cooled atomic vapour are resonantly excited by a dye-laser; in LA-ICP-OES, the
作者: Muscularis    時(shí)間: 2025-3-22 22:58
Laser Beam Probes for Semiconductor Processinguctors by observing the surface-sensitive laser-induced photoluminescence from thin layers of InGaAs and GaAs ., during exposure of their surfaces to reactive gaseous species. We have observed the surface passivation to improve by as much as a factor of 6000 following an exposure of a few seconds to
作者: 莊嚴(yán)    時(shí)間: 2025-3-23 02:26
0168-132X y 73 participants from 21 countries. The aim of this ASI was to provide to the participants an overview of this rapidly expanding field. Fundamental aspects con978-90-481-4510-2978-94-015-8459-3Series ISSN 0168-132X
作者: Colonoscopy    時(shí)間: 2025-3-23 09:29

作者: 制定法律    時(shí)間: 2025-3-23 10:24
Asian Research: The Role of Universities,ases. The latter seems to be thermally activated and also the most stable energetically. The controversy about the saturation coverage of this system at 300 K can be resolved through the existence of the activated phase.
作者: bioavailability    時(shí)間: 2025-3-23 14:40
Thermal He Atom Scattering for the Study of Surface Systems: K on Si(001)ases. The latter seems to be thermally activated and also the most stable energetically. The controversy about the saturation coverage of this system at 300 K can be resolved through the existence of the activated phase.
作者: Patrimony    時(shí)間: 2025-3-23 20:20

作者: carotid-bruit    時(shí)間: 2025-3-23 23:37
https://doi.org/10.1007/978-3-030-93956-4methods is the computer simulation of ions penetrating solids. Selected results such as the calculation of implantation profiles, of plural and multiple scattering in RBS and of the response function of semiconductor detectors are shown.
作者: jealousy    時(shí)間: 2025-3-24 06:19
https://doi.org/10.1007/978-3-642-31837-5can be found in the observation of excitation thresholds, resonances and electron exchange processes, traditionally associated with excitation of ions by . electrons. Improved applications of the Born and Impulse Approximations have been successful in accounting for the new data. A brief account of these investigations is presented.
作者: 綁架    時(shí)間: 2025-3-24 08:03

作者: ascetic    時(shí)間: 2025-3-24 12:08

作者: 微枝末節(jié)    時(shí)間: 2025-3-24 16:23

作者: braggadocio    時(shí)間: 2025-3-24 20:22
Excitation and Ionization In Fast Ion-Atom Collisions Due to Projectile — Electron — Target — Electrcan be found in the observation of excitation thresholds, resonances and electron exchange processes, traditionally associated with excitation of ions by . electrons. Improved applications of the Born and Impulse Approximations have been successful in accounting for the new data. A brief account of these investigations is presented.
作者: ETHER    時(shí)間: 2025-3-25 00:26
Thin Films of High-Temperature Superconductors: Application-Oriented Studies of Growth and Propertieates. Knowledge of the growth of layers in the film plane, and its manipulation, is used to design electronic devices. Also a number of other oxide superconductors can be prepared as thin films with good properties.
作者: 雪上輕舟飛過(guò)    時(shí)間: 2025-3-25 03:57

作者: terazosin    時(shí)間: 2025-3-25 09:27

作者: 全部    時(shí)間: 2025-3-25 14:09

作者: limber    時(shí)間: 2025-3-25 18:32
Radiation Induced Point Defects and Diffusiondge of production and subsequent migration of defects. In this work, the fundamental aspects of point defect production in metals and alloys by ion irradiation are presented and illustrated with typical examples of radiation enhanced diffusion.
作者: acclimate    時(shí)間: 2025-3-25 22:46
An Overview of Surface Analysis. Application to the Adsorption of Li on Single Crystals of Layered Cals planes of MoS., necessary to prevent any change of MoS. structure other than the intercalation reaction according to the band model, is given by an equation. This flux depends mainly upon the coefficient of diffusion of Li across the van der Waals planes of MoS..
作者: Coma704    時(shí)間: 2025-3-26 04:08
Fundamental Aspects of Ion Electron Interactionsl scheme by Ziegler, Biersack and Littmark (ZBL) allows one to predict ε in a very broad range with good overall accuracy. The paper provides an introduction to the various theories used by ZBL, for protons in particular Lindhard’s Local Density Approximation, and for heavy ions the effective charge concept.
作者: inveigh    時(shí)間: 2025-3-26 06:44
High Temperature Oxidation and Corrosion of Metals and Alloys: Fundamentals and Influence of High Enlocation of their influence is discussed. Major or minor modifications are described, leading to enhancement or inhibition of the corrosion rate. The use of high energy beams as corrosion protection tools is envisaged.
作者: GULP    時(shí)間: 2025-3-26 11:45

作者: JAUNT    時(shí)間: 2025-3-26 15:27

作者: Endearing    時(shí)間: 2025-3-26 18:07

作者: champaign    時(shí)間: 2025-3-26 23:56

作者: 有害處    時(shí)間: 2025-3-27 02:29
Emerging Issues in Head and Neck Infectionsy means of a dynamic Monte-Carlo computer code. Several simple depth-profile approximations showing the necessity of data-processing were discussed. A comparison between the simulated profiles and the experimental results was made taking into consideration the real surface concentration and the one “observed” by XPS.
作者: 把…比做    時(shí)間: 2025-3-27 07:51
Combination Antimicrobial Therapies applications of laser-induced plasmas are briefly described: direct nitridation of metal surface, pulsed laser deposition and soft laser material ablation coupled to resonance ionisation mass spectrometry for ultra-trace analysis.
作者: 自戀    時(shí)間: 2025-3-27 10:51
Fundamental Aspects of Ion Electron Interactionsre of the mean energy loss relative to the target areal density is the (electronic) stopping cross section ε. Up to now neither a universal stopping theory for all ion-target-combinations at all energies exists, nor has ε been measured for all combinations at all energies. However, the semi-empirica
作者: 胰臟    時(shí)間: 2025-3-27 15:35

作者: 合唱團(tuán)    時(shí)間: 2025-3-27 19:16
Excitation and Ionization In Fast Ion-Atom Collisions Due to Projectile — Electron — Target — Electr to projectile-electron — target-electron interactions can be clearly identified. The interacting electrons, traditionally assigned only a passive screening role, are now seen to acquire a new dynamic role, contributing a significant part of the excitation cross section, measuring up to 60%, as in t
作者: 破布    時(shí)間: 2025-3-27 22:53

作者: 打包    時(shí)間: 2025-3-28 06:07
High Temperature Oxidation and Corrosion of Metals and Alloys: Fundamentals and Influence of High Enview. Special attention is paid to the compacity of corrosion scales, the nature of the diffusing defects and the location of the slow process(es). The influence of gases other than oxygen and alloying additions are described. In a second part, the effects of high energy beams are presented and the
作者: duplicate    時(shí)間: 2025-3-28 07:08
Thin Films of High-Temperature Superconductors: Application-Oriented Studies of Growth and Propertieality and with excellent superconducting properties. By this process, superconducting ultra-thin films of only two unit cells thickness can be deposited, which allows multilayers to be manufactured. Variations in the deposition parameters can be used to influence the growth directions of the layers,
作者: Generator    時(shí)間: 2025-3-28 12:06

作者: 充氣女    時(shí)間: 2025-3-28 15:08
Depth Profiling in Combination with Sputteringories. The first group comprises instruments which utilise the flux of sputtered particles for materials characterisation, the second employs surface sensitive techniques to determine the composition of the topmost layers at the sputter eroded surface. The technical and physical aspects of sputterin
作者: cyanosis    時(shí)間: 2025-3-28 19:41

作者: neuron    時(shí)間: 2025-3-28 23:12

作者: 輕打    時(shí)間: 2025-3-29 04:10
Experimental and Monte-Carlo Simulation Studies of the Surface Concentration Changes in ZrO2 under Icopy. It was shown that bombardment leads to a gradual build-up of an oxygen depletion layer that was described by its averaged composition and the in-depth distribution of the elemental concentration as a function of the ion dose. These parameters during the depth profiling process were simulated b
作者: Trigger-Point    時(shí)間: 2025-3-29 07:57
The Raman Approach to Materials Scienceith emphasis on those concepts and techniques, which are relevant to material characterisation. Representative problems from current literature are discussed, including temperature, pressure, residual strain effects, crystal quality, lattice damage and recovery, and high-T. superconductivity.
作者: 連累    時(shí)間: 2025-3-29 12:05
Laser-Material Interaction. Plasma Formation and Applicationssteps of the plasma formation are reviewed: initiation with primary electron production, surface material vaporisation and ionisation, breakdown in the ambient gas and plasma propagation. The influence of the laser wavelength, the material characteristics and the ambient gas nature is studied. Three
作者: 表否定    時(shí)間: 2025-3-29 18:47
Optical Spectrometry Coupled with Laser Ablation for Analytical Applications on Solidseric pressure inherent to the laser ablation (LA) techniques are of great interest for industrial applications, as they have the premises for becoming general, all-round and robust direct solid-sample analytical techniques. A general description of the laser ablation process, under conditions releva
作者: 絕食    時(shí)間: 2025-3-29 21:43
Laser Beam Probes for Semiconductor Processingng the processing of these materials for chip fabrication, we have developed and tested three techniques, which can be used at any pressure, and at temperatures between 300 and 500°C..Implementing the “Interferometric Technique”, we have used HeNe laser interferometry to follow the etching of Si, Ga
作者: 松果    時(shí)間: 2025-3-30 02:21
Application of Particle and Laser Beams in Materials Technology978-94-015-8459-3Series ISSN 0168-132X
作者: Amplify    時(shí)間: 2025-3-30 05:08

作者: 微塵    時(shí)間: 2025-3-30 08:26

作者: 厭食癥    時(shí)間: 2025-3-30 14:25

作者: 光滑    時(shí)間: 2025-3-30 19:32

作者: Between    時(shí)間: 2025-3-30 22:49

作者: 真繁榮    時(shí)間: 2025-3-31 04:37
Hui Zhang,Qing Guo,Costas S. Iliopoulosetermining the final microstructure. The first consequence of irradiation in metals is the production of atomic displacements, resulting in the formation of point defects in excess of equilibrium. Since these are the principal agents for atomic transport in crystals, they enhance the diffusion proce
作者: 壓碎    時(shí)間: 2025-3-31 05:56

作者: 燈絲    時(shí)間: 2025-3-31 12:50





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