作者: panorama 時間: 2025-3-22 00:03 作者: octogenarian 時間: 2025-3-22 02:01
https://doi.org/10.1007/978-981-15-4015-8r gain-current relation. Edge emitting and vertical cavity surface emitting lasers have been fabricated with some of their properties already exceeding the performance of conventional semiconductor diode lasers based on quantum wells.作者: ear-canal 時間: 2025-3-22 06:36 作者: 連鎖,連串 時間: 2025-3-22 12:14
Correlations between microstructure and electronic properties in amorphous carbon based materials,stigate doping by substitution of nitrogen and boron into existing high-density tetrahedrally bonded amorphous carbon (ta-C) models. Additionally, we present first results on N-defects in ta-C which naturally develope during simulated annealing of a liquid carbon-nitrogen mixture at varying N concentration between 3 and 12%.作者: 角斗士 時間: 2025-3-22 15:40 作者: exquisite 時間: 2025-3-22 18:21
1438-4329 t, which has been held in Regensburg in the period March 23 - 27, 1998. The meeting has been attended by more than 2800 participants from all areas of solid state physics and other areas of physics as well since this time it has been organized together with the yearly general meeting. The invited an作者: 友好關(guān)系 時間: 2025-3-22 22:43 作者: Aprope 時間: 2025-3-23 04:39 作者: 種子 時間: 2025-3-23 08:11 作者: Comprise 時間: 2025-3-23 13:44
,Growth and characterization of II–VI semiconductor lasers,nt of MgZnSSe with a ZnSe/MgZnSSe superlattice as material for the cladding layers in the laser diode, doping levels could be increased by a factor of 2 and with the use of ZnSe substrates instead of GaAs, high brightness light emitting devices and laser diodes with long lifetimes could be manufactured.作者: Pander 時間: 2025-3-23 16:15 作者: Bridle 時間: 2025-3-23 19:04
Charge fluctuations, chaotic trajectories, and the coulomb blockade,n agreement with theories based on the Tomonaga-Luttinger formalism. For stronger coupling (.>0.5), in asymetric quantum dots with only one opening lead, . . appears to reach a constant value. This latter behaviour can be explained by taking into account chaotic motion of the electrons in the quantum dot.作者: Homocystinuria 時間: 2025-3-24 01:01
Conference proceedings 1999as been held in Regensburg in the period March 23 - 27, 1998. The meeting has been attended by more than 2800 participants from all areas of solid state physics and other areas of physics as well since this time it has been organized together with the yearly general meeting. The invited and plenary 作者: 惡臭 時間: 2025-3-24 02:41
Electron ground states in a few-electron quantum dot,ingle-particle states and Hund’s rule. Most features can be explained with an extended constant interaction (CI) model. This model describes the electron-electron interactions by a charging energy plus an exchange energy which are both independent of magnetic field.作者: 谷物 時間: 2025-3-24 09:13 作者: 受辱 時間: 2025-3-24 13:57
Diode lasers based on quantum dots,r gain-current relation. Edge emitting and vertical cavity surface emitting lasers have been fabricated with some of their properties already exceeding the performance of conventional semiconductor diode lasers based on quantum wells.作者: 混沌 時間: 2025-3-24 16:40
Optical properties of localized excitons in nanostructures: Theoretical aspects,e, temperature, disorder strength, and spatial resolution can be studied. Spatially resolved spectra turn out to be particularly interesting: Their autocorrelation contains information on the spatial extension of the wave functions, which is otherwise inaccessible.作者: 噴出 時間: 2025-3-24 20:23 作者: 承認(rèn) 時間: 2025-3-25 03:13 作者: 高度表 時間: 2025-3-25 05:00 作者: Basal-Ganglia 時間: 2025-3-25 08:29
https://doi.org/10.1007/978-981-15-4015-8bble has to be shape stable. (ii) Diffusive stability distinguishes between unstable and stable SL. (iii) Chemical stability, i.e., molecular gases dissociate, react to water soluble gases and only inert gases remain within the bubble. Our results resolve various experimental paradoxes and quantitatively account for many measurements.作者: Amorous 時間: 2025-3-25 13:40
https://doi.org/10.1007/978-3-030-00692-1or temperatures ranging from 100 K to 300 K are compared with recent experimental findings. Solving the kinetic equation of photons transient spectral and temporal oscillations experimentally observed in the laser emission are shown to result from memory effects.作者: oxidant 時間: 2025-3-25 17:24
Lecture Notes in Computer Sciencee art and new developments in the fields crystal growth, oxidation and reactive ion etching of SiC are reported. In addition to the polar properties of the SiC, also the anisotropic properties have to be taken into account for the design and the processing of electronic devices.作者: Antagonism 時間: 2025-3-25 21:29
Mateusz Modrzejewski,Przemys?aw Rokitad conditions stabilizing the growth of certain polytypes have been found. With a step decrease of ., a step-flow growth mode of both 4H- and 6H-SiC occurs and, depending on the step configuration, we also propose a 1D nucleation at steps edges. At even lower ., homoepitaxial growth of 4H-SiC via 2D nucleation occurs on C-stabilized surfaces.作者: needle 時間: 2025-3-26 01:37 作者: 佛刊 時間: 2025-3-26 05:08
Computer Vision and Image Processingntinuously tuned between the harmonic spatial motion envisioned by Zener and a symmetric breathing-mode motion where no macroscopic dipole oscillation is present. The results further show that the dynamics of the wave packets can be significantly influenced by excitonic effects due to the photo-excited holes.作者: 格言 時間: 2025-3-26 11:52
,Many-body theory for II–VI semiconductor laser media,or temperatures ranging from 100 K to 300 K are compared with recent experimental findings. Solving the kinetic equation of photons transient spectral and temporal oscillations experimentally observed in the laser emission are shown to result from memory effects.作者: 加劇 時間: 2025-3-26 14:02
SiC: Polar properties and their influence on technology and devices,e art and new developments in the fields crystal growth, oxidation and reactive ion etching of SiC are reported. In addition to the polar properties of the SiC, also the anisotropic properties have to be taken into account for the design and the processing of electronic devices.作者: Antagonist 時間: 2025-3-26 19:49 作者: 談判 時間: 2025-3-26 22:36
,Si1?x?yGexCy alloys: Growth and properties of a new semiconducting material,al properties, and the influence of C atoms on band structure and charge carrier properties will be discussed. We show how lower carbon concentrations can influence dopant diffusion, without affecting strain and band alignment. Finally, we present possible applications of this new semiconducting material.作者: NEG 時間: 2025-3-27 04:18 作者: Evacuate 時間: 2025-3-27 08:25 作者: paroxysm 時間: 2025-3-27 12:37
Festk?rperprobleme978-3-540-44558-6Series ISSN 1438-4329 Series E-ISSN 1617-5034 作者: Flounder 時間: 2025-3-27 16:13
Sung Yong Jo,Jeongmok Ha,Hong Jeongrinsic band-edge luminescence and excitons localized at boron acceptors introduced into the layers by doping during layer deposition or by ion implantation. The problem of shallow donors is also addressed, and in particular promising recent electrical and optical data on phosphorus-doped diamond layers are presented.作者: 易于交談 時間: 2025-3-27 21:15
Advances in Solid State Physicshttp://image.papertrans.cn/a/image/149818.jpg作者: 矛盾心理 時間: 2025-3-27 22:21 作者: 罐里有戒指 時間: 2025-3-28 04:32
978-3-662-16127-2Springer Fachmedien Wiesbaden 1999作者: 迅速飛過 時間: 2025-3-28 06:57 作者: 純樸 時間: 2025-3-28 13:56
Thierry Bay,Romain Raffin,Marc Danielvering the UV-to-blue spectral region. Recent advances in group III-nitride layer growth using MBE and, in particular, MOCVD allow the preparation of high-quality n- and p- type conducting GaN layers as well as GaN/(AlGa)N/(InGa)N hetero- and quantum-structures, in spite of the lack of lattice match作者: 龍卷風(fēng) 時間: 2025-3-28 16:40
Bartosz Jab?oński,Marek Kulbacki electronics. The recent first realization of an InGaN multi-quantum-well laser diode is a great progress in the development of ultraviolet optoelectronic devices. In spite of this and other successes, there is a continuing discussion about the processes responsible for the laser emission. The prese作者: 協(xié)定 時間: 2025-3-28 21:23 作者: Incommensurate 時間: 2025-3-29 00:17 作者: patriot 時間: 2025-3-29 06:44
Lecture Notes in Computer Scienceharge density distribution along the ‘Si-C’ bond, nearly the complete bond charge is closely located at the carbon atom. Therefore, SiC is piezoelectric and shows a strong ‘Reststrahl’ absorption which allows the investigation of optical transitions due to impurities (vibrational and electronic tran作者: 折磨 時間: 2025-3-29 08:20
Mateusz Modrzejewski,Przemys?aw Rokita results demonstrate that similar SiC growth mechanisms act in all vapour phase epitaxial techniques. They also show that the control of the Si/C ratio and the super-saturation (.) is essential for the growth mode and the kind of polytype grown. Low temperature (.<1200 °C) deposition on on-axis SiC 作者: 極少 時間: 2025-3-29 15:09
https://doi.org/10.1007/978-3-642-02345-3licon is small, epitaxial layers which more than 1 at. % C can be fabricated by molecular beam epitaxy and different chemical vapor deposition techniques. One of the most crucial questions is the relation between substitutional and interstitial carbon incorporation, which has a large impact on the e作者: 宏偉 時間: 2025-3-29 17:18
Lecture Notes in Computer Scienceonic structure, that such investigations have provided. The main factors influencing chemical bonding will be discussed, namely the atomic density, the annealing time for structural relaxation and the incorporated hydrogen fraction. By comparing the π-orbital characteristics, such as . gaps and defe作者: 鎮(zhèn)壓 時間: 2025-3-29 22:52 作者: coagulation 時間: 2025-3-30 00:14
Przemys?aw Mazurek,Dorota Oszutowska–Mazureker of electrons in our vertical quantum dots are changed one-by-one from zero up to about a hundred by means of the gate voltage. We identify the quantum numbers of the states by measuring the magnetic field dependence. We find that transitions in the ground states originate from crossings between s作者: municipality 時間: 2025-3-30 04:20
Bartosz Bazyluk,Rados?aw Mantiukfferent sample structures consisting of individual quantum dots, pairs of coupled dots as well as of linear arrays of dots are studied by microscopic photoluminescence spectroscopy. The high degree of control over shape, composition and position of the 7×7×7 nm. size GaAs quantum dots, which form at作者: Merited 時間: 2025-3-30 10:30
Satish Kumar Singh,Partha Roy,P. Nagabhushantions (SPE) and collective spin-density and charge-density excitations (SDE and CDE). This allows us to determine the influence of many-particle interactions in the quantum dots. Moreover, by a detailed analysis of wave-vector and magnetic-field dependent measurements, we can identify transitions be作者: inflame 時間: 2025-3-30 14:02 作者: 凹室 時間: 2025-3-30 18:55
https://doi.org/10.1007/978-3-031-11346-8leads. A powerlaw scaling behaviour depending on the number of opening leads was observed for the weak coupling regime in both types of experiments, in agreement with theories based on the Tomonaga-Luttinger formalism. For stronger coupling (.>0.5), in asymetric quantum dots with only one opening le作者: 確定方向 時間: 2025-3-30 20:51
https://doi.org/10.1007/978-981-15-4015-8carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. The strong localization of carriers in the QDs leads to non-thermal population statistics directly impacting the gain and threshold. The excitonic nature of recombination leads to a linea作者: 作嘔 時間: 2025-3-31 01:01
https://doi.org/10.1007/978-981-15-4015-8 of the light? and 2. When does SL occur? Whereas the first question is still not completely answered, the second question could be resolved within the hydrodynamical/chemical approach towards sonoluminescence we elaborated in the last three years. For SL to occur, the bubble collapse has to be viol作者: anaphylaxis 時間: 2025-3-31 06:46 作者: 反省 時間: 2025-3-31 13:09
Computer Vision and Image Processinged for a kinetic equation, which is formulated in terms of disorder eigenstates and includes phonon relaxation and radiative exciton, decay. Depending on the excitation scheme, the solutions describe photoluminescence, photoluminescence excitation spectroscopy, or absorption. Their dependence on tim作者: 新字 時間: 2025-3-31 15:20 作者: 道學(xué)氣 時間: 2025-3-31 18:49 作者: Nerve-Block 時間: 2025-3-31 22:07
Laser processes in group-III nitrides, electronics. The recent first realization of an InGaN multi-quantum-well laser diode is a great progress in the development of ultraviolet optoelectronic devices. In spite of this and other successes, there is a continuing discussion about the processes responsible for the laser emission. The prese作者: 撫育 時間: 2025-4-1 02:04
,Growth and characterization of II–VI semiconductor lasers,from above 10 V to below 2V at high current densities by a multilayer contact with ZnSe and ZnTe layers with variing thickness ratio. By the replacement of MgZnSSe with a ZnSe/MgZnSSe superlattice as material for the cladding layers in the laser diode, doping levels could be increased by a factor of作者: amplitude 時間: 2025-4-1 06:38
,Many-body theory for II–VI semiconductor laser media,h treats the relevant quasi-particles (photons, carriers and plasmons) within a fully quantum-mechanical footing. In order to consistently describe the gain lineshape and spectral position of lasing, it is demonstrated that both Coulomb effects within mean-field contributions and higher order many-b作者: fetter 時間: 2025-4-1 11:10
SiC: Polar properties and their influence on technology and devices,harge density distribution along the ‘Si-C’ bond, nearly the complete bond charge is closely located at the carbon atom. Therefore, SiC is piezoelectric and shows a strong ‘Reststrahl’ absorption which allows the investigation of optical transitions due to impurities (vibrational and electronic tran作者: GUEER 時間: 2025-4-1 15:56
,Growth mechanisms of SiC on α-SiC(0001) prepared by solid-source molecular beam epitaxy, results demonstrate that similar SiC growth mechanisms act in all vapour phase epitaxial techniques. They also show that the control of the Si/C ratio and the super-saturation (.) is essential for the growth mode and the kind of polytype grown. Low temperature (.<1200 °C) deposition on on-axis SiC 作者: 柳樹；枯黃 時間: 2025-4-1 20:57 作者: ingestion 時間: 2025-4-1 22:46
