標題: Titlebook: Advanced Test Methods for SRAMs; Effective Solutions Alberto Bosio,Luigi Dilillo,Arnaud Virazel Book 2010 Springer-Verlag US 2010 Dynamic [打印本頁] 作者: 使固定 時間: 2025-3-21 17:17
書目名稱Advanced Test Methods for SRAMs影響因子(影響力)
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書目名稱Advanced Test Methods for SRAMs被引頻次學科排名
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書目名稱Advanced Test Methods for SRAMs讀者反饋學科排名
作者: invulnerable 時間: 2025-3-21 22:28 作者: Accomplish 時間: 2025-3-22 04:20 作者: 讓空氣進入 時間: 2025-3-22 06:42 作者: 意見一致 時間: 2025-3-22 10:56 作者: 運氣 時間: 2025-3-22 13:49 作者: In-Situ 時間: 2025-3-22 19:20 作者: cleaver 時間: 2025-3-22 21:49
Resistive-Open Defects in Sense Amplifiers,ire range of treatment alterna- tives and to empirically determine the effectiveness of specific interventions is particularly great. Residential and inpatient treatment is also an expensive and limited resource, and our wise utilization of it should be guided by a comprehensive understanding of its benefits 978-1-4899-0929-9978-1-4899-0927-5作者: 暴發(fā)戶 時間: 2025-3-23 02:22 作者: 流浪者 時間: 2025-3-23 06:55 作者: Introvert 時間: 2025-3-23 10:45
Resistive-Open Defects in Core-Cells,ly, children and young people who are disadvantaged via measures aimed at tackling ‘social exclusion’ and promoting ‘social justice’. Alongside this, we have until recently witnessed an increasingly punitive and interventionist stance being taken towards young people who offend or who are considered作者: 課程 時間: 2025-3-23 15:07
Resistive-Open Defects in Pre-charge Circuits,ethods and with many of the problems faced by designers. Architects rely upon scientific theories, methods, and data to construct stable physical structures and upon past experience when considering aesthetic components of design, but they typically use less systematic assessments of user perception作者: 鍍金 時間: 2025-3-23 18:03 作者: 符合你規(guī)定 時間: 2025-3-23 22:51
Resistive-Open Defects in Write Drivers,ual’s life it will encompass all the emotions which are a part of living — joy, sorrow, fulfilment and despair. The residential unit must not take responsibility for all these areas for adults must plan their own lives, but staff must be aware that what is termed residential . for them, is residenti作者: 不利 時間: 2025-3-24 04:02 作者: 主動 時間: 2025-3-24 09:54
Diagnosis and Design-for-Diagnosis,im in translate medical evidence (e.g. hand hygiene saves lives) into clinical practice (e.g. actually washing your hands before you see the patient, suffice it to say that not all hospitals are able to report 100% compliance with hand-hygiene). All doctoral residents in the United States must now s作者: aesthetic 時間: 2025-3-24 14:37
https://doi.org/10.1007/978-1-4419-0938-1Dynamic Memory Faults; Electronic Testing; Memory Testing; Nanoscale Testing; SRAM; Semiconductor Memorie作者: acrophobia 時間: 2025-3-24 15:35
978-1-4899-8314-5Springer-Verlag US 2010作者: Temporal-Lobe 時間: 2025-3-24 20:54 作者: thyroid-hormone 時間: 2025-3-25 02:38
Bowen Tang,John Ewalt,Ho-Leung Ngc faults. Resistive-open defects appear frequently in VDSM technologies and induce a modification of the timing within the memory (delay faults). Among the faults induced by such resistive-open defects, there are static and dynamic Read Destructive Faults (RDFs), Deceptive Read Destructive Faults (D作者: 沐浴 時間: 2025-3-25 06:01
Mary McMahon,Cristian Bellodi,Davide Ruggero memory array. This action is essential to ensure correct read operations. This chapter presents the study of the effects of resistive-open defects in the pre-charge circuits of SRAMs. Each defect produces a perturbation of the read operation, with an incidence that depends on the location and the r作者: Contort 時間: 2025-3-25 08:07
Saiprasad Palusa,Jeffrey Wiluszstive-ADOFs that are caused by intra-gate pure open and resistive-open defects. Experiments show that resistive-ADOFs, which are a generalization of ADOFs, require more stringent timing constraints for their sensitization. Several algorithmic solutions are effective to test these faults. These so-lu作者: DIS 時間: 2025-3-25 11:44
https://doi.org/10.1007/978-94-009-5065-8haviors. These faulty behaviors can be modeled as Slow Write Driver Faults (SWDFs) and Un-Restored Destructive Write Faults (URDWFs). A SWDF involves an erroneous write operation when the same write driver performs two successive write operations with opposite data values. An URDWF is a consequence 作者: NICHE 時間: 2025-3-25 18:31 作者: 裁決 時間: 2025-3-25 21:06
The Kinds of Ordinary Materials,detailed. The first section focuses on threshold voltage deviations within the SRAM core-cell that lead to static and dynamic faults, such as TF and dRDF. Next, it is shown that leakage currents flowing through the pass gates of unselected core-cells may influence the read operation causing leakage 作者: 攝取 時間: 2025-3-26 01:10
Energy Flow in the Production of Order, technologies are also more prone to defects, parasitic phenomena, and manufacturing variations, which may drastically reduce the yield. For this reason, fault detection, diagnosis, and defect localization are used in order to repair defective memories thus improving SoC reliability and yield. This 作者: 投射 時間: 2025-3-26 05:21 作者: Free-Radical 時間: 2025-3-26 12:32
http://image.papertrans.cn/a/image/146341.jpg作者: Observe 時間: 2025-3-26 14:37 作者: overreach 時間: 2025-3-26 17:09
https://doi.org/10.1007/978-94-009-5065-8(either r0 or r1 in case of d2cIRF2). Results of electrical simulations, performed with a 65-nm SRAM technology, are reported to provide a complete understanding of such a faulty behavior. Finally, possible March test solutions are proposed to detect all d2cIRFs (type 1 and type 2) in SRAM sense amplifiers.作者: NAIVE 時間: 2025-3-26 21:43 作者: IRK 時間: 2025-3-27 02:26 作者: 兇猛 時間: 2025-3-27 06:47
m the electrical causes of malfunction up to the generation .Modern electronics depend on nanoscaled technologies that present new challenges in terms of testing and diagnostics. Memories are particularly prone to defects since they exploit the technology limits to get the highest density. This book作者: 才能 時間: 2025-3-27 10:33
Energy Flow in the Production of Order,on, fault detection, diagnosis, and defect localization are used in order to repair defective memories thus improving SoC reliability and yield. This chapter focuses on diagnosis and design-for-diagnosis techniques dedicated to SRAMs.作者: 平淡而無味 時間: 2025-3-27 13:51
Book 2010 to defects since they exploit the technology limits to get the highest density. This book is an invaluable guide to the testing and diagnostics of the latest generation of SRAM, one of the most widely applied types of memory. Classical methods for testing memory are designed to handle the so-called作者: Ptosis 時間: 2025-3-27 18:42
Book 2010 "static faults," but these test solutions are not sufficient for faults that are emerging in the latest Very Deep Sub-Micron (VDSM) technologies. These new fault models, referred to as "dynamic faults", are not covered by classical test solutions and require the dedicated test sequences presented in this book..作者: otic-capsule 時間: 2025-3-27 21:57
Saiprasad Palusa,Jeffrey WiluszMarch tests, without modifying their complexity and their capability to cover the former target faults. A meaningful example of a modified test algorithm covering ADOFs is March iC-, which is an improved version of March C-.作者: MEEK 時間: 2025-3-28 02:37
https://doi.org/10.1007/978-94-009-5065-8ediately after a specific write operation. Electrical simulations, performed with a 65-nm technology, are reported to give a complete understanding of such faulty behaviors. Finally, possible March test solutions are proposed to detect all SWDFs and URDWFs.作者: 緩解 時間: 2025-3-28 08:28
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