標(biāo)題: Titlebook: Advanced Gate Stacks for High-Mobility Semiconductors; Athanasios Dimoulas,Evgeni Gusev,Marc Heyns Book 2007 Springer-Verlag Berlin Heidel [打印本頁(yè)] 作者: 調(diào)戲 時(shí)間: 2025-3-21 17:27
書目名稱Advanced Gate Stacks for High-Mobility Semiconductors影響因子(影響力)
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書目名稱Advanced Gate Stacks for High-Mobility Semiconductors讀者反饋學(xué)科排名
作者: LEER 時(shí)間: 2025-3-21 20:42
Strained-Si CMOS Technology,. Die Praktiker werden dazu angeregt, sich mit der Grundlage und dem Zustandekommen ihrer Urteile auseinanderzusetzen und diese kritisch zu hinterfragen. Ziel ist eine kompetente Bew?ltigung der diagnostischen Aufgaben, die sich im Rahmen der Personalauswahl und -beurteilung stellen..978-3-540-23717-4978-3-540-68658-3作者: kindred 時(shí)間: 2025-3-22 04:21 作者: 尊敬 時(shí)間: 2025-3-22 08:01 作者: 內(nèi)部 時(shí)間: 2025-3-22 11:27 作者: 寬敞 時(shí)間: 2025-3-22 13:39 作者: 注意力集中 時(shí)間: 2025-3-22 21:05 作者: 臭名昭著 時(shí)間: 2025-3-23 00:55 作者: 終端 時(shí)間: 2025-3-23 04:56
https://doi.org/10.1007/978-3-663-11981-4 time achieved by a single crystal oxide. Various GaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) and their device performance are reviewed. The mechanism of Fermi-level unpinning in ALD-Al.O. on InGaAs was studied and understood. The epitaxy and the interfaces of Gd.O. on GaN were作者: 內(nèi)部 時(shí)間: 2025-3-23 06:05 作者: Mast-Cell 時(shí)間: 2025-3-23 13:08
,Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAs, der Distanz zwischen ?sophagogastralem und gastroduodenalem übergang, und verl?uft quer, sowohl ventral als auch dorsal, entlang der Magenwand zur kleinen Kurvatur, ungef?hr die halbe Distanz zwischen ?sophagogastralem und gastroduodenalem übergang (Abb. 2a.1).作者: 不自然 時(shí)間: 2025-3-23 16:51 作者: Keshan-disease 時(shí)間: 2025-3-23 20:07
,Interface Properties of High-κ Dielectrics on Germanium, some compounds can be checked, but also so that useful reference information can be obtained. It is particularly relevant to do this, since it is not always easy to be certain of nomenclature. Moreover, as we move towards ‘ingredient labelling‘ (a trend not welcomed by some), a high level of unifor作者: Conflict 時(shí)間: 2025-3-23 23:47 作者: Crohns-disease 時(shí)間: 2025-3-24 04:30 作者: 輕浮女 時(shí)間: 2025-3-24 06:43 作者: Trypsin 時(shí)間: 2025-3-24 13:12 作者: 祝賀 時(shí)間: 2025-3-24 18:39
,Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Depositer. Donald Bray (retired), University of Illinois; Dr. W. H. Burke, University of Georgia; Dr. Frank Cherms, Nicholas Turkey Breeding Farms, Inc., Sonoma, California; Dr. Wen- dell Carlson (retired), South Dakota State University; Dr. J. V. Craig, Kansas State University; Dr. K. Goodwin (retired), Pennsylvania978-94-011-7055-0978-94-011-7053-6作者: 值得贊賞 時(shí)間: 2025-3-24 19:57 作者: Lyme-disease 時(shí)間: 2025-3-25 00:26
Passivation and Characterization of Germanium Surfaces,978-3-662-48840-9作者: 燒烤 時(shí)間: 2025-3-25 06:40 作者: Outwit 時(shí)間: 2025-3-25 09:41 作者: Assemble 時(shí)間: 2025-3-25 14:17
Umweltmanagement aus politischer Sichtated with the device miniaturization. Thus, much attention has recently been paid to the mobility enhancement technology through applying strain into CMOS channels. This chapter reviews this strained-Si CMOS technology with an emphasis on the mechanism of mobility enhancement due to strain. The devi作者: 辯論 時(shí)間: 2025-3-25 19:52
Umweltmanagement aus politischer Sicht MOS device on the Si(110) surface, high-speed and low flicker noise p-MOSFETs can be realized. Furthermore, the current drivability of p-MOS and n-MOS which are balanced in the CMOS (balanced CMOS) on Si(110) surface can also be realized. These devices are very useful for application to analog/digi作者: 預(yù)定 時(shí)間: 2025-3-25 21:21 作者: intercede 時(shí)間: 2025-3-26 01:30 作者: GEON 時(shí)間: 2025-3-26 04:22
,Vom Controlling zum ?kocontrolling,ng Ge surface cleaning, surface annealing in ammonia, and the effect of nitridation on .—. and leakage current characteristics are presented and discussed. Electrical data obtained by our group for devices incorporating alumina (Al.O.) and hafnia (HfO.) dielectrics is presented and explained. Capaci作者: vitreous-humor 時(shí)間: 2025-3-26 08:51 作者: conscience 時(shí)間: 2025-3-26 15:03 作者: 全能 時(shí)間: 2025-3-26 19:31 作者: Chameleon 時(shí)間: 2025-3-26 22:23 作者: employor 時(shí)間: 2025-3-27 01:17 作者: capsule 時(shí)間: 2025-3-27 07:40
Grundlagen der Selbstkostenberechnung,rs in microelectronics. A personal choice of studies are singled out, on crystalline, amorphous, and alloy phases as well as thin films, mostly with focus on rare-earth and transition-metal “high-κ” compounds, as well as a selection of important work on silica.作者: headway 時(shí)間: 2025-3-27 13:08
Grundlagen der Selbstkostenberechnung,the scaling of Si CMOS in the sub-65 nm regime, innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. One such promising channel material is Ge due to its higher source injection velocity. However, the作者: promote 時(shí)間: 2025-3-27 15:51 作者: 牢騷 時(shí)間: 2025-3-27 18:01
Betriebs- und Unternehmungsanalysein low interface state density and high carrier mobility. A review on some possible treatments to passivate the Ge surface is discussed. Another important aspect is the activation of .- and .-type dopants to form the active areas in devices. Finally, Ge deep submicron .- and .-FET devices fabricated作者: construct 時(shí)間: 2025-3-28 00:55
Zusammenfassende Gesamtbewertung,performance using an Al.O. high-permittivity (high-κ) gate dielectric, deposited by atomic layer deposition (ALD). These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, high dielectric breakdown strength, a high short-circuit current-gain cut-off frequency (..) and 作者: 季雨 時(shí)間: 2025-3-28 05:07 作者: 到婚嫁年齡 時(shí)間: 2025-3-28 07:24 作者: hedonic 時(shí)間: 2025-3-28 14:04
Umweltmanagement aus politischer Sicht MOS device on the Si(110) surface, high-speed and low flicker noise p-MOSFETs can be realized. Furthermore, the current drivability of p-MOS and n-MOS which are balanced in the CMOS (balanced CMOS) on Si(110) surface can also be realized. These devices are very useful for application to analog/digital mixed signal circuits.作者: innovation 時(shí)間: 2025-3-28 15:21 作者: parsimony 時(shí)間: 2025-3-28 21:21
Betriebs- und UnternehmungsanalyseGe buried channel MOSFET structures. The device design and scalability of the strained Ge buried channel MOSFETs are discussed based on our recent results. CMOS compatible integration approaches of Ge channel devices are presented.作者: V洗浴 時(shí)間: 2025-3-29 02:29
https://doi.org/10.1007/978-3-663-07984-2Recent progress and current understanding of high-κ/Ge interface and its impact on device performances are summarized. After reviewing the properties of Ge oxide and high-κ/Ge interface, several reported Ge surface passivation techniques and improved characteristics of high-κ/Ge system using surface passivations are discussed.作者: 樣式 時(shí)間: 2025-3-29 06:59 作者: squander 時(shí)間: 2025-3-29 11:02 作者: NATTY 時(shí)間: 2025-3-29 12:58 作者: 證明無(wú)罪 時(shí)間: 2025-3-29 19:26 作者: Facilities 時(shí)間: 2025-3-29 21:36 作者: 詳細(xì)目錄 時(shí)間: 2025-3-30 03:53
Strained-Si CMOS Technology,Anwendungsbeispiele.Includes supplementary material: .In der Personalbeurteilung und Personalauswahl werden die verfügbaren und wissenschaftlich abgesicherten Verfahren in der Regel ignoriert oder falsch eingesetzt. Dies ist keineswegs den Praktikern anzulasten, die Verantwortung liegt bei der Wisse作者: Pruritus 時(shí)間: 2025-3-30 05:05 作者: Matrimony 時(shí)間: 2025-3-30 11:30
,Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-κ/Metal Gate Metatarbeiter handeln sollen. Es sind S?tze, die die Werte eines Unternehmens spiegeln, die die Kernkompetenz des Unternehmens verdichten und gleichsam eine Vision entwerfen. Gut so, k?nnte man denken. Allerdings werden die S?tze oftmals von einem kleinen Personenkreis im Topmanagement erarbeitet, werde作者: conformity 時(shí)間: 2025-3-30 12:44 作者: 先鋒派 時(shí)間: 2025-3-30 17:43
,Point Defects in Stacks of High-κ Metal Oxides on Ge: Contrast with the Si Case,her‘s Perfumes Cosmetics and Soaps. has been in printsince 1923 and is the classic reference work in the field ofcosmetics. Now in a fully updated 10th edition, this new volumeprovides a firm basic knowledge in the science of cosmetics (includingtoiletries) as well as incorporating the latest trends作者: sebaceous-gland 時(shí)間: 2025-3-30 21:48
,High κ Gate Dielectrics for Compound Semiconductors,d world. This affluence is reflected in the increase in leisure time available to the ordinary man and woman. A sign of that affluence is the ability to spend more of that leisure time away from one’s own climate in a region far from daily routine, where it seldom if ever rains and where the sun con作者: 動(dòng)作謎 時(shí)間: 2025-3-31 01:20
,Interface Properties of High-κ Dielectrics on Germanium, edition, 1974), The Production, Manufacture and Application of Perfumes (eighth edition, 1974) and Modern Cosmetics (eighth edition, 1974). Its popularity is well demonstrated by there having been three reprints of these editions in 1976, 1979 and 1984, res pecti vel y . The history of events can b作者: 噴出 時(shí)間: 2025-3-31 09:04
,A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-κ Materials and F edition, 1974), The Production, Manufacture and Application of Perfumes (eighth edition, 1974) and Modern Cosmetics (eighth edition, 1974). Its popularity is well demonstrated by there having been three reprints of these editions in 1976, 1979 and 1984, respectively. The history of events can be tr作者: Optic-Disk 時(shí)間: 2025-3-31 11:43
Germanium Nanodevices and Technology,because it is available in the wild in this country, but because it is now being farmed, albeit in limited numbers. In other parts of the world, various animals like bear and buffalo are classed as game. Squirrels are also used for food, more especially in North America than other countries, but eve
